Diodes DMP21D0UFD User Manual

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DMP21D0UFD

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

-20V

R

495mΩ @ V
730mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V

1300mΩ @ VGS = -1.5V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Portable electronics

ESD PROTECTED TO 3kV

DS(on)

Max

= -4.5V

GS

X1-DFN1212-3

Top View Bottom View

max

I

D

= 25°C

T

A

(Notes 4)

-1.14A

-0.94A

-0.85A

-0.75A

Features and Benefits

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 3KV

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.005 grams (approximate)

Drain

Gate

D

Gate
Protection
Diode

Equivalent Circuit

Source

Pin-out Top view

S

G

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP21D0UFD-7 K21 7 8 3000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

3. For packaging details, go to our website at http://www.diodes.com.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K21

YM

DMP21D0UFD

Datasheet Number: DS35364

Rev. 4 - 2

K21 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

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DMP21D0UFD

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady
State

T

= 25°C (Note 4)

A

T

= 85°C (Note 4)

A

T

= 25°C (Note 5)

A

V
V

DSS
GSS

I

I

DM

D

-20 V
±8 V

-1.14

-0.83

A

-0.82

-4.0 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Same as note 4, except the device is mounted on minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

(Note 4)
(Note 5) 490 mW
(Note 4)
(Note 5) 256 °C/W

P

D

R

θJA

T

, T

J

STG

930 mW

135 °C/W

-55 to +150 °C

DMP21D0UFD

Datasheet Number: DS35364

Rev. 4 - 2

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Thermal Characteristics

10

9
8
7
6

5
4
3
2

P(pk), PEAK TRANSIENT POWER (W)

1
0

0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

1

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

Single Pulse
R = 136 C/W
R (t) = R *r(t)

T - T = P*R

°

θ

JA

θθ

JA JA

JA JA

D = 0.9

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DMP21D0UFD

10

-I (A) @P =1ms

DW

I , DRAIN CURRENT (A)

D

0.01

1

0.1

T = 150 C
T= 25C
Single Puls e

-

J(MAX)
A

C

D

@

)

A

(

I

D

I

-

°

0

1

=

W

P

@

)

A

(

D

P

@

)

A

(

I

-

D

A

(

I

-

D

°

0.001

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Oper ation Area

-

I

D

(

A

)

@

P

W

=

1

0

0

µ

s

s

s

1

=

W

s

m

0

0

1

=

W

P

@

)

A

(

I

-

D

s

m

0

1

=

W

P

@

)

R

DS(ON)

Limited

-I (A) @

D

P =10µs

W

D = 0.05

D = 0.02

0.01

D = 0.01

r(t), TRANSIENT THERMAL RESISTANCE

0.001

D = 0.005

Single Puls e

0.000001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

R (t) = r(t) * R

θθJA

R = 54°C/W

JA

Duty Cycle, D =t1/ t2

θ

JA

t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Therm al Resist ance

DMP21D0UFD

Datasheet Number: DS35364

Rev. 4 - 2

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