Diodes DMN6040SFDE User Manual

DMN6040SFDE

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D max

TA = +25°C

6.5A

5.2A

V

(BR)DSS

60V

R

DS(ON) max

38mΩ @ V

47mΩ @ VGS = 4.5V

GS

= 10V

Package

U-DFN2020-6

Type E

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• General Purpose Interfacing Switch

• Power Management Functions

ADVANCE INFORMATION

Pin1

U-DFN2020-6 Type E

Bottom View

Bottom View

Pin Out

Features and Benefits

• 100% Unclamped Inductive Switch (UIS) test in production

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

Gate

Equivalent Circuit

e4

Drain

Source

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMN6040SFDE-7 N8 7 3,000

DMN6040SFDE-13 N8 13 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN6040SFDE

D

atasheet number: DS35792 Rev. 8 - 2

www.diodes.com

N8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

August 2012

© Diodes Incorporated

θ

)

g

g

)

r

)

r

r

DMN6040SFDE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH

Steady

State
t<10s

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

I

AR

E

AR

60 V

±20 V

5.3

4.1

6.5

5.1

A

A

30 A

2.5 A

14.2 A
10 mJ

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 132

T

= +25°C

A

TA = +70°C

Steady state

t<10s 43

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

0.66

0.42
189

2.03

1.31

W

°C/W

W

61

°C/W

9.3

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

100 nA

±100

nA

VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
V

= ±20V, VDS = 0V

GS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

1

⎯
⎯
⎯

|

fs

⎯

⎯

30 38

35 47

4.5

0.7 1.2 V

3 V

⎯

VDS = VGS, ID = 250µA
V

mΩ

V

S

V
VGS = 0V, IS = 1A

= 10V, ID = 4.3A

GS

= 4.5V, ID = 4A

GS

= 10V, ID = 4.3A

DS

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

⎯

⎯

⎯

⎯
Total Gate Charge (VGS = 10V) Qg ⎯
Total Gate Charge (VGS = 4.5V) Qg ⎯
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

t

⎯

r

Q

⎯

r

1287

57
44

1.2

22.4

10.4

4.9

3.0

6.6

8.1

20.1

4.0
18

11.9

⎯
⎯
⎯

pF

V

= 25V, VGS = 0V

DS

f = 1.0MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯

⎯

⎯

nC

V

= 30V, ID = 4.3A

DS

⎯
⎯
⎯
⎯

nS

= 10V, VDD = 30V, RG = 6Ω,

V

GS

I

= 4.3A

D

⎯

⎯

⎯

nS

IS = 4.3A, dI/dt = 100A/μs

nC

IS = 4.3A, dI/dt = 100A/μs

DMN6040SFDE

D

atasheet number: DS35792 Rev. 8 - 2

2 of 6

www.diodes.com

August 2012

© Diodes Incorporated