Diodes DMN30H14DLY User Manual

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Product Summary

TA = +25°C

0.21A

0.17A

(BR)DSS

300V

14 @ V

20 @ VGS = 4.5V

DS(ON)

= 10V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

ADVANCED INFORMATION

Memories, Transistors, etc

SOT89

Top View

DMN30H14DLY

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Finish annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.052 grams (approximate)

Pin-out Top

Equivalent Circuit

Ordering Information (Note 4)

Part Number Compliance Case Quantity per reel

DMN30H14DLY-13 Standard SOT89 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

YWW

www.diodes.com

= Manufacturer’s Marking H4Y = Marking Code YWW = Date Code Marking Y= Year (ex: 4 = 2014) WW = Week (01 - 53)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, duty cycle ≦1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ADVANCED INFORMATION

Operating and Storage Temperature Range

Steady

State

DSS

GSS

= +25°C

= +70°C

(Note 5)

(Note 6) 2.2

(Note 5)

(Note 6) 55

(Note 6)

J, TSTG

-55 to +150 °C

DMN30H14DLY

300 V

±20 V

0.21

0.16

0.9

132

9.6

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

DSS

GSS

300

DSS

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

DS(ON)

GS(th)

⎯

6 14

6 20

0.7 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

⎯

iss

⎯

D(on)

D(off)

oss

rss

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5.8

3.2

0.3

1.9

3.3

8.6

= 0V, ID = 250µA

1 µA

±100 nA

3 V

= 240V, V

±20V, V

GS =

= VGS, ID = 250µA

= 10V, ID = 0.3A

= 4.5V, ID = 0.2A

= 0V

VGS = 0V, IS = 0.3A

⎯

= 25V, VGS = 0V,

⎯

f = 1MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz

⎯

= 192V, VGS = 10V,

= 0.5A

⎯

= 60V, RL =200

= 10V, RG = 25

⎯

= 100V, IF=1.0A, di/dt=100A/µs

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CUR

RENT

CUR

OUR

ON-R

OUR

CE ON-R

TANC

ON-R

OUR

0.8

0.7

V = 20VGS

V = 10VGS

0.6

(A)

0.5

0.4

AIN

0.3

0.2

I, D

0.1

0.0

0246810

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

ADVANCED INFORMATION

ESISTANCE ( )

AIN-S

, D

DS(ON)

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

V = 10VGS

ESISTANCE ( )

AIN-S

, D

T = 125°C

DS(ON)

0 0.1 0.2 0.3 0.4 0.5 0.6

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

V =4.0VGS

V= 4.5V

V= 2.2V

V = 4.5VGS

V = 10VGS

T = 150°C

T = 25°C

V= 3.0V

T = 85°C

T = -55°C

V= 2.5V

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DMN30H14DLY

0.5

V = 10VDS

0.4

(A)

0.3

T = 150°C

AIN

0.2

T = 85°C

I, D

T = 125°C

0.1

00.511.522.533.54 V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

E ( )

ESIS

I = 300mA

AIN-S

, D

DS(ON)

02468101214161820

V , GATE-SOURCE VOLTAGE (V)GS

Figure 4 Typical Transfer Characteristics

2.8

2.4

2.0

1.6

AIN-S

, D

1.2

DS(ON)

ON-RESISTANCE (NORMALIZED)

0.8

0.4

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

T = 25°C

T = -55°C

V=V

I = 100mA

V=5V

I = 100mA

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OUR

ON-R

TANC

THRESH

OUR

CE CUR

REN

UNC

TION CAPACITANC

TE T

RESH

TAG

RENT

E ( )

ESIS

V=V

I = 500mA

AIN-S

, D

DS(ON)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

0.6

ADVANCED INFORMATION

0.5

V=V

I = 100mA

DMN30H14DLY

2.0

1.9

1.8

E (V) A

1.7

1.6

1.5

LD V

I = 250µA

1.4

1.3

1.2

E A

1.1

1.0

GS(th)

0.9

0.8

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

1000

I= 1mA

(A)

I, S

0.4

0.3

0.2

T = 150°C

T = 125°C

T= 85°C

T= 25°C

T = -55°C

0.1

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

E (V)

E (pF)

100

, J

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

oss

Figure 10 Typical Junction Capacitance

T = 150°C

J(max)

T = 25°C

V = 10V

Single Pulse DUT on 1 * MRP Board

(A)

iss

rss

DS(on)

Limited

LD V

0 0.5 1 1.5 2 2.5 3 3.5 4

Q(nC)

, TOTAL GATE CHARGE

Figure 11 Gate Charge

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

V = 192V

I= A

0.5

AIN

I, D

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0.1

0.01

0.001

0.1 1 10 100 1000 V , DRAIN-SOURCE VOLTAGE (V)

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

Figure 12 SOA, Safe Operation Area

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T T

HER

D = 0.9 D = 0.7

D = 0.5

D = 0.3

0.1

ESIS

MAL

0.01

ANSIEN

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

r(t),

D = Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

ADVANCED INFORMATION

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

(

)

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X2 (2x)

X (3x)

R (t) = r(t) * R

θθ

JA JA

R = 136°C/W

Duty Cycle, D = t1/ t2

SOT89

Dim Min Max

A 1.40 1.60 B 0.44 0.62

B1 0.35 0.54

C 0.35 0.43 D 4.40 4.60

D1 1.52 1.83

E 2.29 2.60

e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25 L 0.89 1.20

All Dimensions in mm

Dimensions Value (in mm)

X 0.900 X1 1.733 X2 0.416

Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125

C 1.500

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

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March 2014

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

ADVANCED INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

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March 2014