Diodes DMN601WK User Manual
K
DMN601W
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance: R
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED
DS(ON)
TOP VIEW
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT323
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT
Drain
Source
D
GS
TOP VIEW
Pin Out Configuration
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMN601WK-7 SOT323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K7K
Chengdu A/T Site
YM
K7K
Shanghai A/T Site
YM
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
DMN601WK
Document number: DS30653 Rev. 5 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
K
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed (Note 6)
Thermal Characteristics (@T
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics (@T
V
DSS
V
GSS
Continuous
= +25°C, unless otherwise specified.)
A
ID
PD
R
TJ, T
= +25°C, unless otherwise specified.)
A
JA
STG
DMN601W
60 V
±20 V
300
800
mA
200 mW
625 °C/W
-65 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN601WK
Document number: DS30653 Rev. 5 - 2
BV
I
I
V
R
DS(ON)
|Yfs|
C
C
DSS
DSS
GSS
GS(th)
C
iss
oss
rss
60
1.0 1.6 2.5 V
80
2 of 5
www.diodes.com
1.0 µA
±10 µA
2.0
3.0
50 pF
25 pF
5.0 pF
V
VGS = 0V, ID = 10µA
V
= 60V, VGS = 0V
DS
V
±20V, VDS = 0V
GS =
VDS = 10V, ID = 1mA
V
10V, ID = 0.5A
GS =
V
= 4.5V, ID = 0.2A
GS
ms
V
= 10V, ID = 0.2A
DS
VDS = 25V, VGS = 0V, f = 1.0MHz
September 2013
© Diodes Incorporated
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