Diodes DMN601VK User Manual

K

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Up To 2kV

• "Green" Device (Note 4)

NEW PRODUCT

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 1)

ESD Protec ted up to 2kV

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

DMN601V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

TOP VIEW

SOT-563

D

S

Internal Schematic

Continuous

Pulsed (Note 3)

2

2

TOP VIEW

S

G

1

1

D

G

1

2

V

DSS

V

GSS

I

D

60 V
±20 V
305

800

mA

Thermal Characteristics @T

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics @T

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

DMN601VK

Document number: DS30655 Rev. 4 - 2

Characteristic Symbol Min Typ Max Unit Test Condition

= 25°C unless otherwise specified

A

= 25°C unless otherwise specified

A

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

|Yfs| ⎯
V

SD

C

iss

C

oss

C

rss

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P

d

R

JA

θ

Tj, T

STG

60

⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯

250 nA

±500
±100

nA

1.0 1.6 2.5 V

2.0

⎯
⎯

0.5

⎯ ⎯
⎯ ⎯
⎯ ⎯

⎯

284

⎯

3.0

ms

⎯

1.4 V

50 pF
25 pF

5.0 pF

250 mW
500 °C/W

-65 to +150 °C

V

VGS = 0V, ID = 10μA
VDS = 50V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V

VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.5A

Ω

VGS = 4.5V, ID = 200mA
VDS =10V, ID = 0.2A
V

= 0V, IS = 115mA

GS

VDS = 25V, VGS = 0V
f = 1.0MHz

October 2007

© Diodes Incorporated

K

R

CUR

R

T

NEW PRODUCT

DMN601V

V = 10V

GS

8V
6V
5V
4V

1.0

(A)

3V

8V

6V

5V

EN

0.8

0.6

AIN

D

0.4

I, D

0.2

0

01 2 34

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

2

4V

3V

5

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

V = 10V

DS

I= 1mA

D

Pulsed

10

1.5

Ω

0.5

1

0

-25

-50

02550

T , CHANNEL TEMPERATURE (°C)

CH

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

75 100

125 150

DS(ON)

R , STATIC DRAIN-SOURCE

1

ON-RESISTANCE ( )

0.1

,

I DRAIN CURRENT (A)

D

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

10

Ω

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

Ω

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

0

1

I , DRAIN CURRENT (A)

D

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

DMN601VK

Document number: DS30655 Rev. 4 - 2

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V GATE SOURCE VOLTAGE (V)

GS,

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

© Diodes Incorporated

October 2007