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Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
NEW PRODUCT
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
ESD Protec ted up to 2kV
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
DMN601V
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
TOP VIEW
SOT-563
D
S
Internal Schematic
Continuous
Pulsed (Note 3)
2
2
TOP VIEW
S
G
1
1
D
G
1
2
V
DSS
V
GSS
I
D
60 V
±20 V
305
800
mA
Thermal Characteristics @T
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN601VK
Document number: DS30655 Rev. 4 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
A
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Yfs| ⎯
V
SD
C
iss
C
oss
C
rss
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P
d
R
JA
θ
Tj, T
STG
60
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
250 nA
±500
±100
nA
1.0 1.6 2.5 V
2.0
⎯
⎯
0.5
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯
284
⎯
3.0
ms
⎯
1.4 V
50 pF
25 pF
5.0 pF
250 mW
500 °C/W
-65 to +150 °C
V
VGS = 0V, ID = 10μA
VDS = 50V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.5A
Ω
VGS = 4.5V, ID = 200mA
VDS =10V, ID = 0.2A
V
= 0V, IS = 115mA
GS
VDS = 25V, VGS = 0V
f = 1.0MHz
October 2007
© Diodes Incorporated
Page 2
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R
CUR
R
T
NEW PRODUCT
DMN601V
V = 10V
GS
8V
6V
5V
4V
1.0
(A)
3V
8V
6V
5V
EN
0.8
0.6
AIN
D
0.4
I, D
0.2
0
01 2 34
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
2
4V
3V
5
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
V = 10V
DS
I= 1mA
D
Pulsed
10
1.5
Ω
0.5
1
0
-25
-50
02550
T , CHANNEL TEMPERATURE (°C)
CH
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
75 100
125 150
DS(ON)
R , STATIC DRAIN-SOURCE
1
ON-RESISTANCE ( )
0.1
,
I DRAIN CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
10
Ω
ON-RESISTANCE ( )
DS(ON)
R , STATIC DRAIN-SOURCE
Ω
ON-RESISTANCE ( )
DS(ON)
R , STATIC DRAIN-SOURCE
0
1
I , DRAIN CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN601VK
Document number: DS30655 Rev. 4 - 2
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V GATE SOURCE VOLTAGE (V)
GS,
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
© Diodes Incorporated
October 2007
Page 3
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Y
FORWARD T
RANSFER
T
TAN
C
NEW PRODUCT
Ω
ON-STATE RESISTANCE ( )
DS(ON)
R , STATIC DRAIN-SOURCE
0
T , CHANNEL TEMPERATURE ( C)
CH
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
V = 10V
GS
DMN601V
V = 0V
GS
Pulsed
T = 150C
°
A
DR
I , REVERSE DRAIN CURRENT (A)
T= -55C
A
°
V = 10V
E (S)
GS
Pulsed
T = 125CA °
T = 85CA °
T = 25CA°
T = 0CA°
T = -25CA°
°
T = 25°C
A
Pulsed
ADMI
V= 0V
DR
I , REVERSE DRAIN CURRENT (A)
GS
|,
fs
T = -55CA°
T = 25CA°
T = 150CA°
T = 85CA°
|
1
I , DRAIN CURRENT (A)
D
1
Fig.10 Forward Transfer Admittance
vs. Drain Current
Ordering Information (Note 6)
Part Number Case Packaging
DMN601VK-7 SOT-563 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
D
2
K7K YM
S
2
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN601VK
Document number: DS30655 Rev. 4 - 2
S
G
1
1
K7K = Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
G
D
2
1
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October 2007
© Diodes Incorporated
Page 4
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DMN601V
Package Outline Dimensions
NEW PRODUCT
K
A
B
C
D
G
M
H
L
Dim Min Max Typ
SOT-563
A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
G
Z
Y
X
EE
Dimensions Value (in mm)
Z 2.2
G 1.2
X 0.375
Y 0.5
C
IMPORTANT NOTICE
LIFE SUPPORT
C 1.7
E 0.5
DMN601VK
Document number: DS30655 Rev. 4 - 2
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October 2007
© Diodes Incorporated
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