Diodes DMN601TK User Manual

K

θ

)

Please click here to visit our online spice models database.

Features

• Low On-Resistance: R

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected Up To 2kV

• "Green" Device (Note 4)

ESD Protected up to 2kV

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 1)

DS(ON)

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

DMN601T

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.002 grams (approximate)

TOP VIEW

SOT-523

Gate

Gate
Protection
Diode

Continuous

Pulsed (Note 3)

Drain

Source

EQUIVALENT CIRCUIT

D

GS

TOP VIEW

Pin Out Configuration

V

DSS

V

GSS

ID

60 V
±20 V
300

800

mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics @T

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 1. Device mounted on FR-4 PCB.

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%

5. Short duration pulse test used to minimize self-heating effect.

DMN601TK

Document number: DS30654 Rev. 5 - 2

= 25°C unless otherwise specified

BV

DSS

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Yfs|

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

rss

1 of 4

www.diodes.com

PD

R

JA

TJ, T

STG

60

⎯ ⎯

1.0

±10

μA
μA

⎯ ⎯
⎯ ⎯

1.0 1.6 2.5 V
⎯
80

⎯
⎯ ⎯

3.0

Ω

ms

2.0

⎯

50 pF
25 pF

⎯ ⎯

5.0 pF

150 mW
833 °C/W

-65 to +150 °C

V

VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A

VDS = 25V, VGS = 0V
f = 1.0MHz

March 2009

© Diodes Incorporated

K

RAIN CUR

R

N

T

DMN601T

V = 10V

GS

8V
6V
5V
4V

1.0

(A)

0.8

E

3V

0.6

0.4

D

I, D

0.2

0

01 234

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

2

10V

8V

6V

5V

4V

3V

5

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

V= 10V

DS

I= 1mA

D

Pulsed

10

1.5

Ω

0.5

DS(ON)

R , STATIC DRAIN-SOURCE

1

0

-50

10

Ω

ON-RESISTANCE ( )

-25

02550

T , CHANNEL TEMPERATURE (°C)

ch

75 100

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

125 150

1

ON-RESISTANCE ( )

DS(ON)

R , STA TIC DRAIN-SOURCE

0.1

Ω

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

,

I DRAIN CURRENT (A)

D

Fig. 4 Static Drain-Source On-Resist ance

vs. Drain Cur r ent

0

1

I , DRAIN CURRENT (A)

D

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

V GATE SOURCE VOLTAGE (V)

GS,

Fig. 6 Static Drain-Source On-Resistance

vs. G ate- S ource V olt a ge

DMN601TK

Document number: DS30654 Rev. 5 - 2

2 of 4

www.diodes.com

March 2009

© Diodes Incorporated