K
θ
)
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Features
• Low On-Resistance: R
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
ESD Protected up to 2kV
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
DS(ON)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
DMN601T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
TOP VIEW
SOT-523
Gate
Gate
Protection
Diode
Continuous
Pulsed (Note 3)
Drain
Source
EQUIVALENT CIRCUIT
D
GS
TOP VIEW
Pin Out Configuration
V
DSS
V
GSS
ID
60 V
±20 V
300
800
mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. Device mounted on FR-4 PCB.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%
5. Short duration pulse test used to minimize self-heating effect.
DMN601TK
Document number: DS30654 Rev. 5 - 2
= 25°C unless otherwise specified
BV
DSS
I
DSS
I
GSS
V
GS(th
R
DS (ON)
|Yfs|
C
⎯ ⎯
iss
C
⎯ ⎯
oss
C
rss
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PD
R
JA
TJ, T
STG
60
⎯ ⎯
1.0
±10
μA
μA
⎯ ⎯
⎯ ⎯
1.0 1.6 2.5 V
⎯
80
⎯
⎯ ⎯
3.0
Ω
ms
2.0
⎯
50 pF
25 pF
⎯ ⎯
5.0 pF
150 mW
833 °C/W
-65 to +150 °C
V
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VDS = 25V, VGS = 0V
f = 1.0MHz
March 2009
© Diodes Incorporated
K
RAIN CUR
R
N
T
DMN601T
V = 10V
GS
8V
6V
5V
4V
1.0
(A)
0.8
E
3V
0.6
0.4
D
I, D
0.2
0
01 234
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
2
10V
8V
6V
5V
4V
3V
5
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
V= 10V
DS
I= 1mA
D
Pulsed
10
1.5
Ω
0.5
DS(ON)
R , STATIC DRAIN-SOURCE
1
0
-50
10
Ω
ON-RESISTANCE ( )
-25
02550
T , CHANNEL TEMPERATURE (°C)
ch
75 100
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
125 150
1
ON-RESISTANCE ( )
DS(ON)
R , STA TIC DRAIN-SOURCE
0.1
Ω
ON-RESISTANCE ( )
DS(ON)
R , STATIC DRAIN-SOURCE
,
I DRAIN CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resist ance
vs. Drain Cur r ent
0
1
I , DRAIN CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
V GATE SOURCE VOLTAGE (V)
GS,
Fig. 6 Static Drain-Source On-Resistance
vs. G ate- S ource V olt a ge
DMN601TK
Document number: DS30654 Rev. 5 - 2
2 of 4
www.diodes.com
March 2009
© Diodes Incorporated
K
Y
FORWARD T
R
FER
T
TANC
Ω
ON-STATE RESISTANCE ( )
DS(ON)
R , STAT IC DRAIN-SOURCE
0
V = 10V
GS
Pulsed
T , CHANNEL TEMPERATURE ( C)
CH
Fig. 7
Static Drain-Source On-State Resistance
vs. Channel Temperature
V = 10V
GS
I = 300mA
D
I = 150mA
D
°
DMN601T
V = 0V
GS
Pulsed
T = 125 C
°
T = 150 C
°
A
DR
I , REVERSE DRAIN CURRENT (A)
V = 10V
E (S)
GS
Pulsed
T= -55C
A
A
T = 85C
°
A
T = 25C
°
A
T = 0C
°
A
T = -25C
°
A
°
T = 25°C
A
Pulsed
AD MI
ANS
V= 0V
GS
DR
I , REVERSE DRAIN CURRENT (A)
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|
1
Ordering Information (Note 6)
Part Number Case Packaging
DMN601TK-7 SOT-523 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K7K
YM
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012
Code S T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
T = 25C
°
A
T = 150 C
T = -55C
°
A
T = 85C
°
A
I , DRAIN CURRENT (A)
D
A
Fig.10 Fo r w ar d Transfer A dmittance
vs. Drain Current
°
1
DMN601TK
Document number: DS30654 Rev. 5 - 2
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March 2009
© Diodes Incorporated
K
DMN601T
Package Outline Dimensions
K
J
A
Dim Min Max Typ
C
B
G
H
N
D
L
M
SOT-523
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
All Dimensions in mm
0.50
⎯
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Y
Dimensions Value (in mm)
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
DMN601TK
Document number: DS30654 Rev. 5 - 2
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March 2009
© Diodes Incorporated
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