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Features
• Low On-Resistance: R
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
ESD Protected up to 2kV
Maximum Ratings @T
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
DS(ON)
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
DMN601T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.002 grams (approximate)
TOP VIEW
SOT-523
Gate
Gate
Protection
Diode
Continuous
Pulsed (Note 3)
Drain
Source
EQUIVALENT CIRCUIT
D
GS
TOP VIEW
Pin Out Configuration
V
DSS
V
GSS
ID
60 V
±20 V
300
800
mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. Device mounted on FR-4 PCB.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%
5. Short duration pulse test used to minimize self-heating effect.
DMN601TK
Document number: DS30654 Rev. 5 - 2
= 25°C unless otherwise specified
BV
DSS
I
DSS
I
GSS
V
GS(th
R
DS (ON)
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PD
R
JA
TJ, T
STG
60
⎯ ⎯
1.0
±10
μA
μA
⎯ ⎯
⎯ ⎯
1.0 1.6 2.5 V
⎯
80
⎯
⎯ ⎯
3.0
Ω
ms
2.0
⎯
50 pF
25 pF
⎯ ⎯
5.0 pF
150 mW
833 °C/W
-65 to +150 °C
V
VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VDS = 25V, VGS = 0V
f = 1.0MHz
March 2009
© Diodes Incorporated
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DMN601T
V = 10V
GS
8V
6V
5V
4V
1.0
(A)
0.8
E
3V
0.6
0.4
D
I, D
0.2
0
01 234
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
2
10V
8V
6V
5V
4V
3V
5
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
V= 10V
DS
I= 1mA
D
Pulsed
10
1.5
Ω
0.5
DS(ON)
R , STATIC DRAIN-SOURCE
1
0
-50
10
Ω
ON-RESISTANCE ( )
-25
02550
T , CHANNEL TEMPERATURE (°C)
ch
75 100
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
125 150
1
ON-RESISTANCE ( )
DS(ON)
R , STA TIC DRAIN-SOURCE
0.1
Ω
ON-RESISTANCE ( )
DS(ON)
R , STATIC DRAIN-SOURCE
,
I DRAIN CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resist ance
vs. Drain Cur r ent
0
1
I , DRAIN CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
V GATE SOURCE VOLTAGE (V)
GS,
Fig. 6 Static Drain-Source On-Resistance
vs. G ate- S ource V olt a ge
DMN601TK
Document number: DS30654 Rev. 5 - 2
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March 2009
© Diodes Incorporated