Diodes DMN601K User Manual

M

Features

 Low On-Resistance: R
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected Up To 2kV
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

DS(ON)

Top View

SOT23

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

 Case: SOT23
 Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish  Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.008 grams (approximate)

Drain

D

Gate

Gate
Protection
Diode

EQUIVALENT CIRCUIT

Source

G

Top View

Pin Out Configuration

DMN601K

e3

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN601K-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2011 2012 2013 2014 2015 2016 2017

Code S T U V W X Y Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K7K

YM

Shanghai A/T SiteChengdu A/T Site

K7K

YM

K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

DMN601K

Document number: DS30652 Rev. 8 - 2

1 of 5

www.diodes.com

August 2013

© Diodes Incorporated

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5)

Thermal Characteristics (@T

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

DMN601K

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

V

DSS

V

GSS

Pulsed (Note 6)

Continuous

= +25°C, unless otherwise specified.)

A

I

D

Characteristic Symbol Value Units

P

D

R

JA



T

J, TSTG

60 V
±20 V
300

800

mA

350 mW
357 °C/W

-65 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance

V

R

Forward Transfer Admittance

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width ≤10µS, Duty Cycle ≤1%.

7. Short duration pulse test used to minimize self-heating effect.

DMN601K

Document number: DS30652 Rev. 8 - 2

60

DSS

I

 

DSS

 

I

GSS

1.0 1.6 2.5 V

GS(th)

DS(ON)

|Y

fs

C

iss

C

oss

C

rss




80

|

 

 

 

2 of 5

www.diodes.com

 

1.0 µA

±10 µA




2.0

3.0

 

50 pF
25 pF

5.0 pF

V

VGS = 0V, ID = 10µA
V

= 60V, VGS = 0V

DS

V

GS =

VDS = 10V, ID = 1mA
V

GS =



V

= 5V, ID = 0.05A

GS

ms

V

= 10V, ID = 0.2A

DS

V

= 25V, VGS = 0V, f = 1.0MHz

DS

±20V, VDS = 0V

10V, ID = 0.5A

August 2013

© Diodes Incorporated