Diodes DMN601DWK User Manual
K
n
DMN601DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
I
max
D
V
(BR)DSS
60V
R
3 @ V
DS(ON)
max
GS
= 5V
TA = +25°C
0.3A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
NEW PRODUCT
Motor Control
Power Management Functions
ESD Protected up to 2kV
Top View
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT363
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT PER ELEMENT
Drai
Source
Body
Diode
G
1
G
2
Top View
S
1
D
1
D
2
S
2
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN601DWK-7 SOT-363 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D
2G1
K7K YM
S2G
S
1
K7K YM
D
2
1
D
2G1
K7K YM
S2G
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code S T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN601DWK
Document number: DS30656 Rev. 7 - 2
S
1
K7K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
K7K YM
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
D
2
1
M = Month (ex: 9 = September)
1 of 5
www.diodes.com
January 2014
© Diodes Incorporated
K
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
NEW PRODUCT
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
(Note 8)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601DWK
Document number: DS30656 Rev. 7 - 2
Continuous
Pulsed (Note 6)
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Yfs|
V
SD
C
iss
C
oss
C
rss
www.diodes.com
V
DSS
V
GSS
ID
PD
R
JA
TJ, T
STG
60
1.0 1.6 2.5 V
80
0.5
2 of 5
60 V
20
305
800
200 mW
625 °C/W
-65 to +150 °C
V
1 µA
10
2.0
3.0
µA
ms
1.4 V
50 pF
25 pF
5.0 pF
DMN601DW
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
VDS = 25V, VGS = 0V
f = 1.0MHz
V
mA
January 2014
© Diodes Incorporated
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