Diodes DMN601DMK User Manual

K

n

Product Summary

V

R

(BR)DSS

60V

max

DS(ON)

2.4 @ V

= 10V

GS

4.0 @ VGS = 4V

Description and Applications

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• DC-DC Converters

• Power management functions

• Analog Switch

ESD PROTECTED TO 2kV

) and yet maintain superior switching

DS(on)

max

I

D

TA = 25°C

510mA

390mA

SOT26

Top View

DMN601DM

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Drai

S

G

1

1

D

G

1

2

Gate

Gate

Protection

Diode

Source

Equivalent Circuit

Per Element

Body
Diode

D

2

S

2

Top View

Internal Schematic

Ordering Information (Note 3)

Part Number Case Packaging

DMN601DMK-7 SOT26 3000/Tape & Reel

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

K7K YM

K7K YM

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code S T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN601DMK

Document number: DS30657 Rev. 5 - 2

K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)

1 of 5

www.diodes.com

November 2011

© Diodes Incorporated

K

θ

)

g

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current

NEW PRODUCT

Thermal Characteristics @T

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN601DM

Characteristic Symbol Value Units

V

DSS

V

GSS

T

Steady

State

t<10s

Steady

State

t<10s

= 25°C unless otherwise specified

A

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<10s 121

Steady state

t<10s 88

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

60 V
±20 V
510

400
580

470
390

300
440

340

mA

mA

mA

mA

850 mA

1.2 A

0.7 W

157

°C/W

0.98 W
113

°C/W

26

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

60

DSS

⎯ ⎯
⎯ ⎯

⎯ ⎯

1

±10 μA

V

VGS = 0V, ID = 10μA

μA

= 60V, VGS = 0V

V

DS

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

1.0 1.6 2.5 V

100

0.5

⎯
⎯

⎯ ⎯
⎯

fs

SD

⎯

|

2.4
Ω

4.0

ms

1.4 V

VDS = 10V, ID = 1mA
V

= 10V, ID = 200mA

GS

VGS = 4V, ID = 200mA
VDS =10V, ID = 200mA
VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing

DMN601DMK

Document number: DS30657 Rev. 5 - 2

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

6. Short duration pulse test used to minimize self-heating effect

www.diodes.com

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

⎯

t

⎯

D(off

t

⎯

f

2 of 5

30 50 pF

⎯

5 25 pF

⎯

3 5.0 pF

⎯

133

⎯

304

⎯

84

⎯

203

⎯

3.9

⎯

3.4

15.7

9.9

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

V

= 25V, VGS = 0V

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

nC

= 250mA

I

D

V

= 30V, ID = 0.2A,

DS

ns

V

= 10V, RG = 25, RL = 150

GS

November 2011

© Diodes Incorporated