Diodes DMN601DMK User Manual

K

n

Product Summary

V

R

(BR)DSS

60V

max

DS(ON)

2.4 @ V

= 10V

GS

4.0 @ VGS = 4V

Description and Applications

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• DC-DC Converters

• Power management functions

• Analog Switch

ESD PROTECTED TO 2kV

) and yet maintain superior switching

DS(on)

max

I

D

TA = 25°C

510mA

390mA

SOT26

Top View

DMN601DM

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.015 grams (approximate)

Drai

S

G

1

1

D

G

1

2

Gate

Gate

Protection

Diode

Source

Equivalent Circuit

Per Element

Body
Diode

D

2

S

2

Top View

Internal Schematic

Ordering Information (Note 3)

Part Number Case Packaging

DMN601DMK-7 SOT26 3000/Tape & Reel

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

K7K YM

K7K YM

Date Code Key

Year 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code S T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN601DMK

Document number: DS30657 Rev. 5 - 2

K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)

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November 2011

© Diodes Incorporated

K

θ

)

g

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current

NEW PRODUCT

Thermal Characteristics @T

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN601DM

Characteristic Symbol Value Units

V

DSS

V

GSS

T

Steady

State

t<10s

Steady

State

t<10s

= 25°C unless otherwise specified

A

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<10s 121

Steady state

t<10s 88

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

60 V
±20 V
510

400
580

470
390

300
440

340

mA

mA

mA

mA

850 mA

1.2 A

0.7 W

157

°C/W

0.98 W
113

°C/W

26

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

60

DSS

⎯ ⎯
⎯ ⎯

⎯ ⎯

1

±10 μA

V

VGS = 0V, ID = 10μA

μA

= 60V, VGS = 0V

V

DS

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

1.0 1.6 2.5 V

100

0.5

⎯
⎯

⎯ ⎯
⎯

fs

SD

⎯

|

2.4
Ω

4.0

ms

1.4 V

VDS = 10V, ID = 1mA
V

= 10V, ID = 200mA

GS

VGS = 4V, ID = 200mA
VDS =10V, ID = 200mA
VGS = 0V, IS = 115mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Guaranteed by design. Not subject to production testing

DMN601DMK

Document number: DS30657 Rev. 5 - 2

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

6. Short duration pulse test used to minimize self-heating effect

www.diodes.com

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

⎯

t

⎯

D(off

t

⎯

f

2 of 5

30 50 pF

⎯

5 25 pF

⎯

3 5.0 pF

⎯

133

⎯

304

⎯

84

⎯

203

⎯

3.9

⎯

3.4

15.7

9.9

⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯

V

= 25V, VGS = 0V

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

= 4.5V, VDS = 10V,

V

GS

nC

= 250mA

I

D

V

= 30V, ID = 0.2A,

DS

ns

V

= 10V, RG = 25, RL = 150

GS

November 2011

© Diodes Incorporated

K

R

CUR

RENT

GATE THRESH

O

OLTAG

NEW PRODUCT

DMN601DM

1.0

(A)

0.8

0.6

AIN

0.4

D

I, D

0.2

0

012345

V , DRAIN-SOURCE VOLT AGE (V)

DS

Fig. 1 Typical Output Characteristics

2

V = 10V

DS

I= 1mA

E (V)

D

Pulsed

10

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

1.5

Ω

LD V

1

0.5

GS(TH)

V,

0

-50

10

Ω

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

-25

T , CHANNEL TEMPERATURE (°C)

ch

25 50 75 100 125 150

0

Fig. 3 Gate Threshold Vo ltage

vs. Chann el Temperature

1

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

0.1

Ω

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

,

I DRAIN CURRENT(A)

D

Fig. 4 Static D r ai n- Source On-Resistance

vs. Drain Cur r ent

1

I , DRAIN CURRENT (A)

D

Fig. 5 Static Drain-Source On-Resistance

vs. Drain C urrent

DMN601DMK

Document number: DS30657 Rev. 5 - 2

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0

V GATE-SOURCE VOLTAGE (V)

GS,

Fig. 6 Static Drain-Source On-Resistance

vs. G ate- S ource V olt a ge

November 2011

© Diodes Incorporated

K

Y

O

RWARD T

RAN

R

T

TAN

C

NEW PRODUCT

Ω

ON-STATE RESISTANCE ( )

DS(ON)

R , STA T IC DRAIN-SOURCE

0

T , CHANNEL TEMPERATURE ( C)

CH

Static Drain-Source On-State Resistance

Fig. 7

vs. Chann el Temperature

DMN601DM

DR

I , REVERSE DRAIN CURRENT (A)

°

E (S)

ADMI

SFE

DR

I , REVERSE DRAIN CURRENT (A)

1

|, F

fs

|

I , DRAIN CURRENT (A)

Fig.10 Forward Transfer Admittance vs. Drain Current

D

1

Package Outline Dimensions

DMN601DMK

Document number: DS30657 Rev. 5 - 2

K

J

A

B C

H

M

D

L

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Dim Min Max Typ

SOT26

A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D

⎯ ⎯

H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40

M 0.10 0.20 0.15

0° 8°

α

All Dimensions in mm

0.95

⎯

November 2011

© Diodes Incorporated

K

DMN601DM

Suggested Pad Layout

NEW PRODUCT

G

Z

Y

X

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

C2

C2

C1

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 3.20
G 1.60
X 0.55

Y 0.80
C1 2.40
C2 0.95

DMN601DMK

Document number: DS30657 Rev. 5 - 2

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November 2011

© Diodes Incorporated