Diodes DMN5L06WK User Manual
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Features
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
ESD protected up to 2kV
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DMN5L06W
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT-323
D
GS
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Ordering Information (Note 4)
Part Number Case Packaging
DMN5L06WK-7 SOT-323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Chengdu A/T Site
Shanghai A/T Site
DAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
DMN5L06WK
Document number: DS30928 Rev. 8 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
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)
)
DMN5L06W
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed (Note 6)
V
DSS
V
GSS
ID
50 V
20
300
800
V
mA
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
R
TJ, T
PD
JA
STG
250 mW
500
-65 to +150
C/W
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Body Leakage
BV
I
DSS
DSS
GSS
50
60 nA
1
500
50
V
V
= 0V, ID = 10A
GS
V
= 50V, VGS = 0V
DS
VGS = ±12V, VDS = 0V
A
nA
VGS = ±10V, VDS = 0V
nA
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS (ON)
I
D(ON
|Yfs|
V
SD
0.49
0.5 1.4
200
0.5
1.0 V
3.0
2.5
2.0
1.4 V
VDS = VGS, ID = 250A
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
A
VGS = 10V, VDS = 7.5V
mS
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time t
C
C
C
D(on)
Turn-On Rise Time tr
Turn-Off Delay Time t
D(off)
Turn-Off Fall Time tf
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10S, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
iss
oss
rss
2.1
1.8
14.4
8.4
50 pF
25 pF
5.0 pF
ns
ns
ns
ns
VDS = 25V, VGS = 0V
f = 1.0MHz
= 30V, VGS = 10V,
V
DD
R
= 25, ID = 200mA
G
DMN5L06WK
Document number: DS30928 Rev. 8 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
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