Diodes DMN5L06TK User Manual
n
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• ESD Protected Up To 2kV
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
ESD PROTECTED, 2kV
TOP VIEW
Green
DMN5L06TK
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Protection
Drai
Source
SOT523
Gate
Gate
Diode
Equivalent Circuit
G
e3
D
S
Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMN5L06TK-7 SOT523 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
DAB
YM
www.diodes.com
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
1 of 6
July 2012
© Diodes Incorporated
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)
)
DMN5L06TK
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
V
DSS
V
GSS
I
D
50 V
±20
V
280 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C I
Gate-Body Leakage
BV
I
DSS
DSS
GSS
50
⎯ ⎯
⎯ ⎯
⎯ ⎯
ON CHARACTERISTICS (Note 6)
SD
0.49
⎯
⎯
⎯
0.5 1.4
200
|
fs
0.5
⎯
1.8
1.5
1.2
⎯ ⎯
⎯
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS (ON)
I
D(ON
|Y
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
C
iss
C
oss
C
rss
⎯ ⎯
⎯ ⎯
⎯ ⎯
DMN5L06TK
Document number: DS30926 Rev. 5 - 2
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www.diodes.com
150 mW
833
-55 to +150
V
60 nA
1
500
50
μA
nA
nA
1.2 V
3.0
2.5
Ω
2.0
⎯
A
mS
1.4 V
50 pF
25 pF
5.0 pF
V
GS
V
DS
V
GS
V
GS
V
GS
VDS = VGS, ID = 250μA
V
GS
V
GS
V
GS
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
V
DS
f = 1.0MHz
°C/W
°C
= 0V, ID = 10µA
= 50V, VGS = 0V
= ±12V, VDS = 0V
= ±10V, VDS = 0V
= ±5V, VDS = 0V
= 1.8V, ID = 50mA
= 2.5V, ID = 50mA
= 5.0V, ID = 50mA
= 25V, VGS = 0V
July 2012
© Diodes Incorporated
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