Diodes DMN5L06K User Manual
K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
R
(BR)DSS
2.0Ω @ V
50V
2.5Ω @ VGS = 2.5V
DS(ON)
GS
= 5.0V
Description and Applications
This new generation 50V N-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(on) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Load switch.
Load switches
Level switches
ADVANCE INFORMATION
ESD PROTECTED TO 2kV
SOT23
Top View
I
D
TA = +25°C
300 mA
200 mA
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
G
Top View
DMN5L06
D
S
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMN5L06K-7 Commercial SOT23 3000/Tape & Reel
DMN5L06KQ-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
<1000ppm antimony compounds
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN5L06K
Document number: DS30929 Rev. 8 - 2
DAB
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
YM
M = Month (ex: 9 = September)
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© Diodes Incorporated
March 2014
K
)
)
DMN5L06
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed (Note 6)
V
DSS
V
GSS
I
D
50 V
20
300
800
V
mA
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
D
R
θJA
T
, T
J
STG
Electrical Characteristics (@T
ADVANCE INFORMATION
Characteristic Symbol Min Typ Max Unit Test Condition
= +25°C, unless otherwise specified.)
A
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C I
Gate-Body Leakage
BV
DSS
I
GSS
DSS
50
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS(ON)
I
D(ON
|Y
V
SD
0.49
0.5 1.4
200
|
fs
0.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB
6. Pulse width 10mS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN5L06K
Document number: DS30929 Rev. 8 - 2
C
iss
C
oss
C
rss
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350 mW
357
-65 to +150
V
60 nA
1
500
50
μA
nA
nA
1.0 V
3.0
2.5
Ω
2.0
A
mS
1.4 V
50 pF
25 pF
5.0 pF
V
GS
V
DS
V
GS
V
GS
V
GS
VDS = VGS, ID = 250μA
V
GS
V
GS
V
GS
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
V
DS
f = 1.0MHz
C/W
C
= 0V, ID = 10μA
= 50V, VGS = 0V
= ±12V, VDS = 0V
= ±10V, VDS = 0V
= ±5V, VDS = 0V
= 1.8V, ID = 50mA
= 2.5V, ID = 50mA
= 5.0V, ID = 50mA
= 25V, VGS = 0V
March 2014
© Diodes Incorporated
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