Diodes DMN5L06K User Manual

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N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

2.0Ω @ V

50V

2.5Ω @ VGS = 2.5V

DS(ON)

= 5.0V

Description and Applications

This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch.

 Load switches  Level switches

ADVANCE INFORMATION

ESD PROTECTED TO 2kV

SOT23

Top View

TA = +25°C

300 mA

200 mA

Features and Benefits

 Low On-Resistance  Very Low Gate Threshold Voltage (1.0V max)  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Up To 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram  Weight: 0.008 grams (approximate)

Drain

Gate

Gate Protection Diode

Equivalent Circuit

Source

Top View

DMN5L06

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMN5L06K-7 Commercial SOT23 3000/Tape & Reel

DMN5L06KQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

<1000ppm antimony compounds

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN5L06K

Document number: DS30929 Rev. 8 - 2

DAB

DAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006)

M = Month (ex: 9 = September)

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)

DMN5L06

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous

Pulsed (Note 6)

DSS

GSS

50 V

20 300

800

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

θJA

, T

STG

Electrical Characteristics (@T

ADVANCE INFORMATION

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C I

Gate-Body Leakage

DSS

GSS

DSS

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage

GS(th

DS(ON)

D(ON

|Y V

0.49

  

0.5 1.4

200

0.5



  

  

DYNAMIC CHARACTERISTICS

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB

6. Pulse width 10mS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

DMN5L06K

Document number: DS30929 Rev. 8 - 2

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350 mW 357

-65 to +150

60 nA

500

μA nA nA

1.0 V

3.0

2.5

Ω

2.0



1.4 V

50 pF 25 pF

5.0 pF

VDS = VGS, ID = 250μA V

VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA

f = 1.0MHz

C/W

C

= 0V, ID = 10μA

= 50V, VGS = 0V = ±12V, VDS = 0V = ±10V, VDS = 0V = ±5V, VDS = 0V

= 1.8V, ID = 50mA = 2.5V, ID = 50mA = 5.0V, ID = 50mA

= 25V, VGS = 0V

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V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

DMN5L06

ADVANCE INFORMATION



ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

-50

-25

T , CHANNEL TEMPERATURE (°C)

100

125

Fig. 3 Gate Threshold Voltage vs. Channel Temperature



150

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance vs. Drain Current



ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

DMN5L06K

Document number: DS30929 Rev. 8 - 2

I , DRAIN CURRENT (A)

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ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

V GATE SOURCE VOLTAGE (V)

GS,

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

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RWAR

D T

RAN

MIT

TAN

PATIO

ON C

PAC

DMN5L06



ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

T , AMBIENT TEMPERATURE ( C)

Static Drain-Source On-State Resistance

Fig. 7

vs. Ambient Temperature

I , REVERSE DRAIN CURRENT (A)

E (S)

ADVANCE INFORMATION

SFE

I , REVERSE DRAIN CURRENT (A)

400

350

300

N (mW)

250

200

DISSI

150

100

T , AMBIENT TEMPERATURE ( C)

100

150

Fig. 11 Derating Curve - Total

DMN5L06K

Document number: DS30929 Rev. 8 - 2

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|, F

I , DRAIN CURRENT (A)

Fig.10 Forward Transfer Admittance vs. Drain Current

E (pF)

ITAN

, J

f = 1MHz

0 5 10 15 20 25 30

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V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 Typical Junction Capacitance

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55 M 0.085 0.18 0.11



Dimensions Value (in mm)

SOT23

0° 8° -

All Dimensions in mm

Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

DMN5L06

DMN5L06K

Document number: DS30929 Rev. 8 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCE INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN5L06

DMN5L06K

Document number: DS30929 Rev. 8 - 2

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