Diodes DMN5L06DWK User Manual

Features

• Dual N-Channel MOSFET

• Low On-Resistance (1.0V max)

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

SOT363

Top View

DMN5L06DWK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

D

2

S

2

Top View

Internal Schematic

S

G

G

1

1

D

1

2

Ordering Information (Note 3)

Part Number Case Packaging

DMN5L06DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012

Code T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DAB YM

DAB YM

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

DAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September

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September 2011

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θ

)

)

DMN5L06DWK

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Continuous

Pulsed (Note 5)

V

DSS

V

GSS

I

D

50 V

±20
305

800

V

mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 4)

NEW PRODUCT

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

250 mW
500

-65 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I

Gate-Body Leakage

50

BV

DSS

⎯ ⎯

DSS

I

⎯ ⎯

GSS

⎯ ⎯

60 nA

1

500

50

V

μA
nA
nA

V

= 0V, ID = 10μA

GS

V

= 50V, VGS = 0V

DS

V

= ±12V, VDS = 0V

GS

V

= ±10V, VDS = 0V

GS

= ±5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS (ON)

I

D(ON

|Y
V

SD

0.49

⎯
⎯

⎯

0.5 1.4

200

|

fs

0.5

⎯

⎯
⎯

⎯

⎯ ⎯
⎯

1.0 V

3.0

2.5

2.0
⎯

1.4 V

VDS = VGS, ID = 250μA
V

Ω

V
V

A

VGS = 10V, VDS = 7.5V

mS

VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA

= 1.8V, ID = 50mA

GS

= 2.5V, ID = 50mA

GS

= 5.0V, ID = 50mA

GS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 4. Device mounted on FR-4 PCB.

5. Pulse width ≤10μS, Duty Cycle ≤1%.

6. Short duration pulse test used to minimize self-heating effect.

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

50 pF
25 pF

5.0 pF

V
f = 1.0MHz

= 25V, VGS = 0V

DS

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

2 of 6

www.diodes.com

September 2011

© Diodes Incorporated