Diodes DMN5L06DWK User Manual

Features

• Dual N-Channel MOSFET

• Low On-Resistance (1.0V max)

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• ESD Protected up to 2kV

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

SOT363

Top View

DMN5L06DWK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

D

2

S

2

Top View

Internal Schematic

S

G

G

1

1

D

1

2

Ordering Information (Note 3)

Part Number Case Packaging

DMN5L06DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012

Code T U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DAB YM

DAB YM

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

DAB = Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September

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θ

)

)

DMN5L06DWK

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 4) Continuous

Pulsed (Note 5)

V

DSS

V

GSS

I

D

50 V

±20
305

800

V

mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 4)

NEW PRODUCT

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

250 mW
500

-65 to +150

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I

Gate-Body Leakage

50

BV

DSS

⎯ ⎯

DSS

I

⎯ ⎯

GSS

⎯ ⎯

60 nA

1

500

50

V

μA
nA
nA

V

= 0V, ID = 10μA

GS

V

= 50V, VGS = 0V

DS

V

= ±12V, VDS = 0V

GS

V

= ±10V, VDS = 0V

GS

= ±5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS (ON)

I

D(ON

|Y
V

SD

0.49

⎯
⎯

⎯

0.5 1.4

200

|

fs

0.5

⎯

⎯
⎯

⎯

⎯ ⎯
⎯

1.0 V

3.0

2.5

2.0
⎯

1.4 V

VDS = VGS, ID = 250μA
V

Ω

V
V

A

VGS = 10V, VDS = 7.5V

mS

VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA

= 1.8V, ID = 50mA

GS

= 2.5V, ID = 50mA

GS

= 5.0V, ID = 50mA

GS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 4. Device mounted on FR-4 PCB.

5. Pulse width ≤10μS, Duty Cycle ≤1%.

6. Short duration pulse test used to minimize self-heating effect.

C

⎯ ⎯

iss

C

⎯ ⎯

oss

C

⎯ ⎯

rss

50 pF
25 pF

5.0 pF

V
f = 1.0MHz

= 25V, VGS = 0V

DS

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

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NEW PRODUCT

DMN5L06DWK

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

V , GA TE-SOURC E VOLTAGE (V)

GS

Fig. 2 T ypical Transfer Characteristics

10

0

-50

-25

T , CHANNEL TEMPERATURE (°C)

ch

25

0

50

75

100

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

10

Ω

ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

125

150

Ω

1

ON-RESISTANCE ( )

DS(on)

R , STA T IC DRAIN-SOURCE

0

,

I DRAIN CURRENT(A)

D

Fig. 4 Static D r ai n- Source On-Resist ance vs. D r ain Curren t

Ω

ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

I , DRAIN CURRENT (A)

D

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

1

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V GATE SOURCE VOLTAGE (V)

GS,

Fig. 6 Static Drain-Source On-Resistance

vs. Gate- S our ce Voltag e

September 2011

© Diodes Incorporated

Y

O

RWARD T

R

R

T

TANC

P

P

O

R

PATIO

N

NEW PRODUCT

DMN5L06DWK

Ω

ON-RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

T , AMBIENT TEMPERATURE ( C)

A

Fig. 7

St atic Drain- Source On-State Resistan ce

vs. Ambien t T empe rature

°

DR

I , REVERSE DRAIN CURRENT (A)

E (S)

DR

I , REVERSE DRAIN CURRENT (A)

(mW)

DISSI
WE

,

250

200

150

100

D

50

ADMI

ANSFE

|, F

fs

|

1

I , DRAIN CURRENT (A)

Fig.10 Fo r w ar d Tr ansfer Admittance vs . Dr ain Curr ent

D

0

-50 0
T , AMBIENT TEMPERATURE ( C)

A

Fig. 11 Derating Curve - To tal

50

100 150

°

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

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Package Outline Dimensions

NEW PRODUCT

Suggested Pad Layout

K

J

G

Z

Y

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

DMN5L06DWK

A

SOT363

B C

H

M

D

C2

L

F

C2

C1

X

Dim Min Max

A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22

α

All Dimensions in mm

Dimensions Value (in mm)

Z 2.5
G 1.3
X 0.42

Y 0.6
C1 1.9
C2 0.65

0° 8°

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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NEW PRODUCT

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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN5L06DWK

DMN5L06DWK

Document number: DS30930 Rev. 5 - 2

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