Diodes DMN5L06DMK User Manual

K

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage (1.0V max)

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Small Surface Mount Package

• Lead Free By Design/RoHS Compliant (Note 2)

• ESD Protected up to 2kV

• "Green" Device (Note 4)

• Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

ESD protected up 2kV

TOP VIEW

BOTTOM VIEW

Maximum Ratings @T

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous

Pulsed (Note 3)

= 25°C unless otherwise specified

A

DMN5L06DM

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.015 grams (approximate)

SOT-26

D

S

Internal Schematic

V

DSS

V

GSS

I

D

2

2

TOP VIEW

S

G

1

1

D

G

1

2

50 V

±20
305

800

V

mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I

Gate-Body Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 1. Device mounted on FR-4 PCB.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

DMN5L06DMK

Document number: DS30927 Rev. 4 - 2

2. No purposefully added lead.

4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

www.diodes.com

BV

I

GSS

V

GS(th)

R

DS (ON)

I

D(ON)

|Yfs|
V

C
C
C

1 of 4

DSS

DSS

SD

iss
oss
rss

P

D

R

JA

θ

Tj, T

STG

50

⎯ ⎯

⎯ ⎯

0.49

⎯
⎯

⎯

0.5 1.4

200

0.5

⎯ ⎯
⎯ ⎯
⎯ ⎯

-65 to +150

⎯ ⎯

60 nA

1

500

50

⎯

⎯
⎯

⎯

1.0 V

3.0

2.5

2.0

⎯
⎯ ⎯
⎯

1.4 V

50 pF

25 pF

5.0 pF

400 mW
313

°C/W

°C

V

V

= 0V, ID = 10μA

GS

V

= 50V, VGS = 0V

DS

VGS = ±12V, VDS = 0V

μA
nA

VGS = ±10V, VDS = 0V

nA

VGS = ±5V, VDS = 0V

VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 50mA

Ω

VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA

A

VGS = 10V, VDS = 7.5V

mS

VDS =10V, ID = 0.2A
V

= 0V, IS = 115mA

GS

VDS = 25V, VGS = 0V
f = 1.0MHz

September 2007

© Diodes Incorporated

K

NEW PRODUCT

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

10

V , GATE-SOURCE VOLT AGE (V)

GS

Fig. 2 Typical Transf er C haracterist ics

DMN5L06DM

0

-25

-50

Fig. 3 Gate Threshold Voltage vs. Channel Temperature

10

T , CHANNEL TEMPERATURE (°C)

ch

0

25 50

75

100

125 150

1

0

I DRAIN CURRENT(A)

,

Fig. 4 Static D r ai n- Source On -R esistance vs. Drain C ur r ent

D

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

D

DMN5L06DMK

Document number: DS30927 Rev. 4 - 2

1

www.diodes.com

Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage

2 of 4

V GATE SOURCE VOLTAGE (V)

GS,

September 2007

© Diodes Incorporated