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Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage (1.0V max)
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected up to 2kV
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ESD protected up 2kV
TOP VIEW
BOTTOM VIEW
Maximum Ratings @T
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed (Note 3)
= 25°C unless otherwise specified
A
DMN5L06DM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.015 grams (approximate)
SOT-26
D
S
Internal Schematic
V
DSS
V
GSS
I
D
2
2
TOP VIEW
S
G
1
1
D
G
1
2
50 V
±20
305
800
V
mA
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 1. Device mounted on FR-4 PCB.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
2. No purposefully added lead.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
www.diodes.com
BV
I
GSS
V
GS(th)
R
DS (ON)
I
D(ON)
|Yfs|
V
C
C
C
1 of 4
DSS
DSS
SD
iss
oss
rss
P
D
R
JA
θ
Tj, T
STG
50
⎯ ⎯
⎯ ⎯
0.49
⎯
⎯
⎯
0.5 1.4
200
0.5
⎯ ⎯
⎯ ⎯
⎯ ⎯
-65 to +150
⎯ ⎯
60 nA
1
500
50
⎯
⎯
⎯
⎯
1.0 V
3.0
2.5
2.0
⎯
⎯ ⎯
⎯
1.4 V
50 pF
25 pF
5.0 pF
400 mW
313
°C/W
°C
V
V
= 0V, ID = 10μA
GS
V
= 50V, VGS = 0V
DS
VGS = ±12V, VDS = 0V
μA
nA
VGS = ±10V, VDS = 0V
nA
VGS = ±5V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 1.8V, ID = 50mA
Ω
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
A
VGS = 10V, VDS = 7.5V
mS
VDS =10V, ID = 0.2A
V
= 0V, IS = 115mA
GS
VDS = 25V, VGS = 0V
f = 1.0MHz
September 2007
© Diodes Incorporated
Page 2
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NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
10
V , GATE-SOURCE VOLT AGE (V)
GS
Fig. 2 Typical Transf er C haracterist ics
DMN5L06DM
0
-25
-50
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
10
T , CHANNEL TEMPERATURE (°C)
ch
0
25 50
75
100
125 150
1
0
I DRAIN CURRENT(A)
,
Fig. 4 Static D r ai n- Source On -R esistance vs. Drain C ur r ent
D
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
D
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
1
www.diodes.com
Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
2 of 4
V GATE SOURCE VOLTAGE (V)
GS,
September 2007
© Diodes Incorporated
Page 3
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Y
O
RWARD T
R
R
T
TANC
P
, P
O
R
I
I
P
TIO
N
)
NEW PRODUCT
DMN5L06DM
DR
I , REVERSE DRAIN CURRENT (A)
T , AMBIENT TEMPERATURE ( C)
A
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambien t T empe rature
°
E (S)
DR
I , REVERSE DRAIN CURRENT (A)
(mW
A
SS
D
WE
250
200
150
100
ADMI
ANSFE
|, F
fs
|
1
I , DRAIN CURRENT (A)
Fig.10 Fo r ward Transfer Admittance vs. Drain Current
D
D
50
R = 556 C/W
0
-50 0 50
°
θ
JA
100 150
T , AMBIENT TEMPERATURE ( C)
A
Fig. 11 Derating Curve - Total
°
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
3 of 4
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September 2007
© Diodes Incorporated
Page 4
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DMN5L06DM
Ordering Information (Note 6)
Part Number Case Packaging
DMN5L06DMK-7 SOT-26 3000/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NEW PRODUCT
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
D
2
DAB YM
S
2
S
G
G
1
1
DAB = Marking Code
YM = Date Code Marking
DAB YM
Y = Year ex: T = 2006
M = Month ex: 9 = September
D
2
1
Package Outline Dimensions
K
J
A
SOT-26
Dim Min Max Typ
C
B
H
M
L
F
D
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D – – 0.95
F – – 0.55
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15
0° 8°
α
All Dimensions in mm
–
Suggested Pad Layout
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
G
Z
Y
X
EE
Dimensions Value (in mm)
Z 3.20
G 1.60
C
IMPORTANT NOTICE
LIFE SUPPORT
X 0.55
Y 0.80
C 2.40
E 0.95
DMN5L06DMK
Document number: DS30927 Rev. 4 - 2
4 of 4
www.diodes.com
September 2007
© Diodes Incorporated
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