Diodes DMN55D0UT User Manual

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Features

• Low On-Resistance

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• ESD Protected Gate to 2kV

• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

SOT523

Top View

DMN55D0UT

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT523

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drain

D

Gate

Gate
Protection
Diode

Equivalent Circuit

Source

GS

To

View

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMN55D0UT -7 Commercial SOT523 3000/Tape & Reel

DMN55D0UTQ -7 Automotive SOT523 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NAC YM

DMN55D0UT

Document number: DS31330 Rev. 5 - 2

NAC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

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December 2012

© Diodes Incorporated

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)

DMN55D0UT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 5)

V

DSS

V

GSS

I

D

I

DM

50 V

±12

V
160 mA
560 mA

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient

NEW PRODUCT

Operating and Storage Temperature Range

P

D

R

JA

T

, T

J

STG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

50

DSS

⎯ ⎯
⎯ ⎯

⎯ ⎯

1

1.0

5.0

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

V

GS(th

R

DS (ON)

g

0.7 0.8 1.0 V

3.1 4

⎯

180

FS

⎯

4 5

⎯ ⎯

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at

http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

DMN55D0UT

Document number: DS31330 Rev. 5 - 2

C

⎯

iss

C

⎯

oss

C

⎯

rss

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25

5

2.1

⎯
⎯
⎯

200 mW
625

-55 to +150

V

VGS = 0V, ID = 250μA

μA
μA

= 50V, VGS = 0V

V

DS

= ±8V, V

V

GS

= ±12V, V

V

GS

DS

DS

°C/W

°C

= 0V

= 0V

VDS = VGS, ID = 250μA
V

= 4V, ID = 100mA

GS

Ω

VGS = 2.5V, ID = 80mA

mS

V

= 10V, ID = 100mA, f = 1.0KHz

DS

pF
pF

V

DS

= 10V, V

= 0V, f = 1.0MHz

GS

pF

December 2012

© Diodes Incorporated