p
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate to 2kV
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ESD PROTECTED TO 2kV
SOT523
Top View
DMN55D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Drain
D
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
GS
To
View
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMN55D0UT -7 Commercial SOT523 3000/Tape & Reel
DMN55D0UTQ -7 Automotive SOT523 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
NAC YM
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
NAC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
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December 2012
© Diodes Incorporated
θ
)
DMN55D0UT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 5)
V
DSS
V
GSS
I
D
I
DM
50 V
±12
V
160 mA
560 mA
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
NEW PRODUCT
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
I
DSS
I
GSS
50
DSS
⎯ ⎯
⎯ ⎯
⎯ ⎯
1
1.0
5.0
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
GS(th
R
DS (ON)
g
0.7 0.8 1.0 V
3.1 4
⎯
180
FS
⎯
4 5
⎯ ⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
C
⎯
iss
C
⎯
oss
C
⎯
rss
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25
5
2.1
⎯
⎯
⎯
200 mW
625
-55 to +150
V
VGS = 0V, ID = 250μA
μA
μA
= 50V, VGS = 0V
V
DS
= ±8V, V
V
GS
= ±12V, V
V
GS
DS
DS
°C/W
°C
= 0V
= 0V
VDS = VGS, ID = 250μA
V
= 4V, ID = 100mA
GS
Ω
VGS = 2.5V, ID = 80mA
mS
V
= 10V, ID = 100mA, f = 1.0KHz
DS
pF
pF
V
DS
= 10V, V
= 0V, f = 1.0MHz
GS
pF
December 2012
© Diodes Incorporated
R
C
URRENT
R
CUR
RENT
R
R
OUR
CE ON-R
TANC
C
C
PAC
TAN
C
F
NEW PRODUCT
0.8
V = 10V
0.7
0.6
GS
V = 4.5V
GS
(A)
0.5
V = 3.0V
GS
(A)
0.5
0.4
0.3
V = 10V
DS
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.4
AIN
D
I, D
0.3
0.2
V = 2.5V
GS
AIN
D
I, D
0.2
DMN55D0UT
T = 150°C
A
T = 125°C
A
0.1
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
10
Ω
V = 1.5V
GS
V = 1.0V
GS
0
01 234
V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
10
Ω
T = 150°C
A
E ( )
T = 125°C
A
T = 85°C
A
T = 25°C
A
V= 2.5V
GS
ESIS
V = 4.0V
GS
T = -55°C
AIN-S
A
, D
DS(ON)
1
R , DRAIN-SOURCE ON-RESISTANCE ( )
0.001 0.01 0.1 1
I , DRAIN CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain C urrent and Gate Voltage
2.0
1.8
V = 4V
1.6
1.4
1.2
GS
I = 100mA
D
V = 2.5V
GS
I = 80mA
D
1.0
0.8
DS(ON)
R , DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 On- Resistance Variation with Temperature
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
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DS(ON)
1
0 0.1 0.2 0.3 0.4 0.5
I , DRAIN CURRENT (A)
D
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
35
30
)
25
C
iss
E (p
20
I
15
f = 1MHz
V = 0V
GS
A
,
10
5
C
oss
C
rss
0
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 6 Typical Capacitance
December 2012
© Diodes Incorporated
OUR
CE CUR
RENT
T
R
T T
HER
R
TANC
1.1
1.0
0.9
I = 250µA
D
0.8
0.7
0.6
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0.5
NEW PRODUCT
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gat e Threshold V ariation vs. Am bient Temperature
1
0.1
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
E
ESIS
MAL
0.01
ANSIEN
r(t),
0.001
0.000001
0.00001 0.0001 0.001 0.01 0.1 1 10
t , PULSE DURATION TIME (s)
1
Fig. 9 Transient Therm al Response
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
K
J
G
H
D
C
B
N
L
M
1
0.1
(A)
T = 150°C
A
T = 125°C
0.01
0.001
S
I, S
0.0001
A
T = 85°C
A
T = 25°C
A
0.1 0.3 0.5 0.7 0.9 1.1
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
D = 0.9
R (t) = r(t) * R
θθ
JA JA
R = 625°C/W
θ
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
SOT523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D
⎯ ⎯
0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
0° 8°
α
⎯
All Dimensions in mm
DMN55D0UT
T = -55°C
A
100
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
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© Diodes Incorporated
DMN55D0UT
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
Y
Z
X
E
C
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7
DMN55D0UT
Document number: DS31330 Rev. 5 - 2
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© Diodes Incorporated
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