Diodes DMN53D0LW User Manual

Product Summary

V

R

(BR)DSS

50V

2.0 @ V

3.0 @ VGS = 5V

DS(ON)

GS

= 10V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

NEW PRODUCT

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

ESD PROTECTED

SOT323

Top View

Ordering Information (Note 4)

I

D

TA = +25°C

360mA

250mA

DMN53D0LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 N-Channel MOSFET

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

D

Gate

G

Top View

Pin Configuration

S

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

e3

Part Number Case Packaging

DMN53D0LW-7 SOT323 3,000/Tape & Reel

DMN53D0LW-13 SOT323 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

Shanghai A/T Site

www.diodes.com

MM5 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

November 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics (@T

Characteristic Symbol Value Units

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Electrical Characteristics (@T

T

Steady

State

Steady

State

= +25°C, unless otherwise specified.)

A

= +25°C

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

(Note 5)

(Note 6) 420

(Note 5)

(Note 6) 301

= +25°C, unless otherwise specified.)

A

P

R

T

J, TSTG

JA

DMN53D0LW

V

DSS

V

GSS

I

D

I

D

I

DM

D

50 V

±20 V

360
250

250
200

mA

mA

700 mA

320

395

mW

°C/W

-55 to 150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

50

 

 

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient (Note 8)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

V

GS(TH)



R

DS (ON)

GS(TH)

TV

g

FS

V

SD

0.8



J

 

 

80

— 0.75 1.2 V



-3.4

 

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss





Total Gate Charge VGS = 10V Qg 

Total Gate Charge VGS = 4.5V Qg 

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t



f













45.8

5.3

3.9

1.2

0.6

0.2

0.1

2.7

2.5

18.9

11.0

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

2 of 5

www.diodes.com

V

V

= 0V, ID = 250µA

GS

1.0 µA

±10 µA

1.5 V



2.0

3.0

V

= 50V, V

DS

V

±12V, V

GS =

V

= VGS, ID = 100µA

DS

GS

= 0V

DS

mV/°C —

= 10V, ID = 270mA

V

GS



V

= 5V, ID = 200mA

GS

mS

V

= 10V, ID = 200mA

DS

VGS = 0V, IS = 115mA



V

= 25V, VGS = 0V

DS



pF

f = 1.0MHz









nC

V

= 10V, VDS = 10V,

GS

= 250mA

I

D









nS

V

= 30V, VGS = 10V,

DD

= 25, ID = 200mA

R

G



= 0V

November 2013

© Diodes Incorporated