Diodes DMN53D0LW User Manual

Product Summary

V

R

(BR)DSS

50V

2.0 @ V

3.0 @ VGS = 5V

DS(ON)

GS

= 10V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

NEW PRODUCT

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

ESD PROTECTED

SOT323

Top View

Ordering Information (Note 4)

I

D

TA = +25°C

360mA

250mA

DMN53D0LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 N-Channel MOSFET

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

D

Gate

G

Top View

Pin Configuration

S

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

e3

Part Number Case Packaging

DMN53D0LW-7 SOT323 3,000/Tape & Reel

DMN53D0LW-13 SOT323 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

Shanghai A/T Site

www.diodes.com

MM5 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

November 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics (@T

Characteristic Symbol Value Units

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Electrical Characteristics (@T

T

Steady

State

Steady

State

= +25°C, unless otherwise specified.)

A

= +25°C

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

(Note 5)

(Note 6) 420

(Note 5)

(Note 6) 301

= +25°C, unless otherwise specified.)

A

P

R

T

J, TSTG

JA

DMN53D0LW

V

DSS

V

GSS

I

D

I

D

I

DM

D

50 V

±20 V

360
250

250
200

mA

mA

700 mA

320

395

mW

°C/W

-55 to 150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

50

 

 

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient (Note 8)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

V

GS(TH)



R

DS (ON)

GS(TH)

TV

g

FS

V

SD

0.8



J

 

 

80

— 0.75 1.2 V



-3.4

 

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss





Total Gate Charge VGS = 10V Qg 

Total Gate Charge VGS = 4.5V Qg 

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t



f













45.8

5.3

3.9

1.2

0.6

0.2

0.1

2.7

2.5

18.9

11.0

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

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V

V

= 0V, ID = 250µA

GS

1.0 µA

±10 µA

1.5 V



2.0

3.0

V

= 50V, V

DS

V

±12V, V

GS =

V

= VGS, ID = 100µA

DS

GS

= 0V

DS

mV/°C —

= 10V, ID = 270mA

V

GS



V

= 5V, ID = 200mA

GS

mS

V

= 10V, ID = 200mA

DS

VGS = 0V, IS = 115mA



V

= 25V, VGS = 0V

DS



pF

f = 1.0MHz









nC

V

= 10V, VDS = 10V,

GS

= 250mA

I

D









nS

V

= 30V, VGS = 10V,

DD

= 25, ID = 200mA

R

G



= 0V

November 2013

© Diodes Incorporated

R

CUR

R

T

R

CUR

R

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

R

OUR

CE ON-R

T

C

NEW PRODUCT

DMN53D0LW

1.5

1.2

V = 10VGS

V= 5V

GS

V= 3V

GS

1

0.8

V= 5V

DS

(A)

EN

0.9

0.6

AIN

D

I, D

0.3

0.0
012345

V= 4.5V

GS

V= 2.5V

GS

V= 3.5V

GS

V= 2V

GS

V , DRAIN-SOURCE VOLTAGE (V)

DS

V= 1.8V

GS

Figure 1 Typical Output Characteristics

1



0.9

V= 5V

ESISTANCE ( )

0.8

GS

V = 10VGS

ENT (A)

0.6

T = 150°C

0.4

AIN

D

I, D

0.2

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

A

T = 85°C

A

T = 125°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

T = 25°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

2.5



V = 4.5VGS

2

T = 150°C

A

ESISTANCE ( )

1.5

T = 125°C

A

CE

0.7

AIN-S

0.6

, D

DS(ON)

0.5
0 0.2 0.4 0.6 0.8 1

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.4

CE

T = 85°C

A

1

AIN-S

0.5

, D

DS(ON)

0

0 0.2 0.4 0.6 0.8 1

I , DRAIN CURRENT (A)

D

T = -55°C

A

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

2

T = 25°C

A



1.8

E ( )

E

AIN-S

, D

DS(ON)

2.0

V=V

10

GS

I = 500mA

D

1.6

V=5V

GS

I = 300mA

1.2

D

0.8

ON-RESISTANCE (NORMALIZED)

AN

ESIS

AIN-S

, D

1.6

1.4

1.2

0.8

0.6

0.4

V=5V

GS

I = 300mA

D

1

V=V

10

GS

I = 500mA

D

0.2

DS(ON)

0.4

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J



Figure 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Figure 6 On-Resistance Variation with Temperature

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

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November 2013

© Diodes Incorporated

GATE THRESH

O

O

TAG

OUR

C

CUR

R

C

UNC

TION CAPACITANC

GATE THRESH

OLD VOLTAG

NEW PRODUCT

2.0

1.8

E (V)

L

1.6

LD V

1.4

1.2

I = 250µA

D

I= 1mA

D

1.0

0.8

GS(th)

V,

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 7 Gate Threshold Variation vs. Ambient Temperature

100

E (pF)

DMN53D0LW

1.0

0.8

T = 150°C

A

ENT (A)

0.6

T = 125°C

A

E

0.4

T = 85°C

S

I, S

0.2

0



0 0.3 0.6 0.9 1.2 1.5

A

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

10

C

iss

8

E (V)

T = 25°C

A

T = -55°C

A

10

C

, J

T

f = 1MHz

1

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

rss

Figure 9 Typical Junction Capacitance

6

C

oss

4

2

GS

V

0

0 0.3 0.6 0.9 1.2 1.5

V = 10V

DS

I= A

250m

D

Q(nC)

, TOTAL GATE CHARGE

g

Figure 10 Gate Charge

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

K

J

A

Dim Min Max Typ

A 0.25 0.40 0.30
B 1.15 1.35 1.30

C

B

C 2.00 2.20 2.10
D - - 0.65
G 1.20 1.40 1.30

G

H

H 1.80 2.20 2.15

K 0.90 1.00 1.00

D

L

M

M 0.10 0.18 0.11

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

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SOT323

J 0.0 0.10 0.05

L 0.25 0.40 0.30

0° 8° -



All Dimensions in mm

November 2013

© Diodes Incorporated

DMN53D0LW

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y

Z

C

X E

Dimensions Value (in mm)

Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMN53D0LW

Document number: DS36579 Rev. 2 - 2

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November 2013

© Diodes Incorporated