Diodes DMN5 User Manual
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected up to 2kV
• Qualified to AEC-Q101 standards for High Reliability
ESD protected up to 2kV
SOT563
Top View
DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
D
2
S
2
S
G
1
D
G
2
DMN5L06VK
1
1
D
2
G
2
DMN5L06VAK
DMN5010VAK
S
S
e3
G
1
1
D
2
1
Ordering Information (Note 4)
Part Number Case Packaging
DMN5L06VK-7 SOT563 3,000/Tape & Reel
DMN5L06VK-13 SOT563 10,000/Tape & Reel
DMN5L06VAK-7 SOT563 3,000/Tape & Reel
DMN5L06VAK-13 SOT563 10,000/Tape & Reel
DMN5010VAK-7 SOT563 3,000/Tape & Reel
DMN5010VAK-13 SOT563 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information (Note 5)
DMN5L06VK
D
2
1
1
KAB= DMN5L06VK Product Type
S
G
S
D
1
2
Marking Code (See Note 5)
KAB YM
S
G
2
D
2
1
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
xxx YM
G
2
S
2
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Note: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
DMN5010VAK
DMN5L06VAK
G
1
D
1
xxx = Product Type Marking Code:
KAE or KAC (See Note 5)
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 11 - 2
1 of 6
www.diodes.com
May 2014
© Diodes Incorporated
θ
DMN5/L06VK/L06VAK/010VAK
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Drain-Gate Voltage RGS ≤ 1.0MΩ V
Gate-Source Voltage Continuous
Pulsed
Drain Current (Note 6) Continuous
Pulsed
V
V
DSS
DGR
GSS
I
I
DM
D
50 V
50 V
±20
±40
280
1.5
V
mA
A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
P
D
R
JA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C I
Gate-Body Leakage
BV
I
DSS
DSS
GSS
50
— —
— — 1 500
— —
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage @T
= +0°C~ +85°C (Note 8)
@T
J
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
= +25°C
J
V
GS(th)
R
DS (ON)
I
D(ON)
|Y
V
SD
0.49
0.30
—
—
—
0.5 1.4
200
|
fs
0.5
—
—
—
—
— —
—
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
iss
C
oss
C
rss
— —
— —
— —
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 11 - 2
2 of 6
www.diodes.com
250 mW
500
-55 to +150
V
60 nA
µA
nA
50
1.0
1.2
nA
V
3.0
2.5
Ω
2.0
—
A
mS
1.4 V
V
GS
V
DS
V
GS
V
GS
V
GS
VDS = VGS, ID = 250µA
V
GS
V
GS
V
GS
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
°C/W
°C
= 0V, ID = 10µA
= 50V, VGS = 0V
= ±12V, VDS = 0V
= ±10V, VDS = 0V
= ±5V, VDS = 0V
= 1.8V, ID = 50mA
= 2.5V, ID = 50mA
= 5.0V, ID = 50mA
50 pF
= 25V, VGS = 0V
V
25 pF
5.0 pF
DS
f = 1.0MHz
May 2014
© Diodes Incorporated
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