Diodes DMN5 User Manual

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Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected up to 2kV

• Qualified to AEC-Q101 standards for High Reliability

ESD protected up to 2kV

SOT563

Top View

DMN5/L06VK/L06VAK/010VAK

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

DMN5L06VK

DMN5L06VAK DMN5010VAK

Ordering Information (Note 4)

Part Number Case Packaging

DMN5L06VK-7 SOT563 3,000/Tape & Reel DMN5L06VK-13 SOT563 10,000/Tape & Reel DMN5L06VAK-7 SOT563 3,000/Tape & Reel

DMN5L06VAK-13 SOT563 10,000/Tape & Reel

DMN5010VAK-7 SOT563 3,000/Tape & Reel

DMN5010VAK-13 SOT563 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information (Note 5)

DMN5L06VK

KAB= DMN5L06VK Product Type

Marking Code (See Note 5)

KAB YM

YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)

xxx YM

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code T U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Note: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).

DMN5010VAK DMN5L06VAK

xxx = Product Type Marking Code: KAE or KAC (See Note 5) YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)

DMN5/L06VK/L06VAK/010VAK

Document number: DS30769 Rev. 11 - 2

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DMN5/L06VK/L06VAK/010VAK

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain Source Voltage

Drain-Gate Voltage RGS ≤ 1.0MΩ V

Gate-Source Voltage Continuous Pulsed

Drain Current (Note 6) Continuous Pulsed

DSS

DGR

GSS

50 V

±20 ±40

280

1.5

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range

, T

STG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = +25°C I

Gate-Body Leakage

DSS

GSS

— —

— — 1 500

— —

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage @T

= +0°C~ +85°C (Note 8)

Static Drain-Source On-Resistance

On-State Drain Current

Forward Transconductance

Source-Drain Diode Forward Voltage

= +25°C

GS(th)

DS (ON)

D(ON)

0.49

0.30

— — —

0.5 1.4

200

0.5

—

— — —

— —

—

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

iss

oss

rss

— —

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250 mW 500

-55 to +150

60 nA

µA nA

1.0

1.2

3.0

2.5

Ω

2.0

—

1.4 V

VDS = VGS, ID = 250µA

VGS = 10V, VDS = 7.5V

VDS =10V, ID = 0.2A

VGS = 0V, IS = 115mA

°C/W

°C

= 0V, ID = 10µA

= 50V, VGS = 0V

= ±12V, VDS = 0V = ±10V, VDS = 0V = ±5V, VDS = 0V

= 1.8V, ID = 50mA = 2.5V, ID = 50mA = 5.0V, ID = 50mA

50 pF

= 25V, VGS = 0V

25 pF

5.0 pF

f = 1.0MHz

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DMN5/L06VK/L06VAK/010VAK

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

V , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

ON-STATE RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

-25

-50

T , CHANNEL TEMPERATURE (°C)

25 50

100

125 150

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

vs. Drain Current

T = 25C

Pulsed

I = 280mA

ON-STATE RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

I , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

DMN5/L06VK/L06VAK/010VAK

Document number: DS30769 Rev. 11 - 2

DS(on)

R , STATIC DRAIN-SOURCE

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ON-STATE RESISTANCE ( )

V GATE SOURCE VOLTAGE (V)

GS,

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

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FORWARD T

FER

TANC

P, P

OWER

PATIO

DMN5/L06VK/L06VAK/010VAK

V = 10V

Pulsed

I = 280mA

ON-STATE RESISTANCE ( )

DS(on)

R , STATIC DRAIN-SOURCE

T , AMBIENT TEMPERATURE ( C)

Static Drain-Source On-State Resistance

Fig. 7

I , REVERSE DRAIN CURRENT (A)

vs. Ambient Temperature

E (S)

ADMI

ANS

I , REVERSE DRAIN CURRENT (A)

I , DRAIN CURRENT (A)

Fig.10 Forward Transfer Admittance

vs. Drain Current

250

200

N (mW)

150

DISSI

100

-50 0

T , AMBIENT TEMPERATURE ( C)

100 150

Fig. 11 Derating Curve - Total

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

Dim Min Max Typ

A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMN5/L06VK/L06VAK/010VAK

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Dimensions Value (in mm)

Z 2.2

G 1.2

X 0.375

Y 0.5 C1 1.7 C2 0.5

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SOT563

All Dimensions in mm

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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