Diodes DMN4800LSSL User Manual

DMN4800LSSL

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

30V

14mΩ @ V

20mΩ @ VGS = 4.5V 6.7A

DS(on)

GS = 10V 8.0A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

DS(on)) and yet maintain superior switching

Applications

• DC-DC Converters

• Power management functions

NEW PRODUCT

SO-8

Top View

I

max

D

= +25°C

T

A

S

S

G

Features and Benefitss

• 14mΩ @ VGS = 10V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

• Weight: 0.072 grams (approximate)

Top View

Internal Schematic

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

DS

D

D

G

D

Equivalent circuit

D

S

Ordering Information (Note 4)

Part Number Case Packaging

DMN4800LSSL-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

8 5

N4800LS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

N4800LS

YY

WW

1 4

= Manufacturer’s Marking
N4800LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

DMN4800LSSL

Document number: DS35016 Rev. 4 - 2

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

θ

)

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 5) VGS = 10V Steady
State

Drain Current (Note 5) VGS = 10V Steady
State

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

NEW PRODUCT

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

V
V

I

P

R

T

J, TSTG

DSS

GSS

I

D

I

D

DM

D

JA

DMN4800LSSL

30 V

±20

8.0

6.4

6.7

5.3

V

A

A

50 A

1.46 W
86 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

DSS

30

⎯ ⎯
⎯ ⎯
⎯ ⎯

1

±100

V

V

= 0V, ID = 250μA
μA
nA

GS

V

= 30V, VGS = 0V

DS

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

V

g

fs

SD

0.8 1.2 1.6 V

⎯

⎯
⎯

11
14

8

0.72 0.94 V

14
20

⎯

V
V

mΩ

V

S

V
VGS = 0V, IS = 1A

= VGS, ID = 250μA

DS

= 10V, ID = 8A

GS

= 4.5V, ID = 7A

GS

= 10V, ID = 8A

DS

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

C

iss

C

oss

C

rss

R

G

Q
Q
Q

t

d(on

t

⎯

t

d(off

t

⎯

f

DMN4800LSSL

Document number: DS35016 Rev. 4 - 2

⎯
⎯
⎯

⎯

⎯

⎯

s

⎯

d

⎯

⎯

www.diodes.com

2 of 6

798
128
122

1.37

8.7

1.7

2.4

5.03

4.50

26.33

8.55

⎯
⎯
⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

pF
pF
pF

Ω

nC

ns

= 10V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

= 5V, VDS = 15V, ID = 9A

V

GS

= 15V, V

V

DD

R

= 15Ω, RG = 6.0Ω, ID = 1A

L

GEN

= 10V,

November 2013

© Diodes Incorporated