Diodes DMN4468LSS User Manual

Product Summary

V

R

(BR)DSS

14mΩ @ V

30V

20mΩ @ VGS = 4.5V

DS(ON)

max

= 10V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state
resistance (R
performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

 Backlighting

 Power Management Functions

 DC-DC Converters

) and yet maintain superior switching

DS(on)

SO-8

Top View

S

S

G

I

max

D

TA = +25°C

10A

8A

Internal Schematic

Top View

DMN4468LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.072 grams (approximate)

D

DS

D

G

D

D

S

Equivalent circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN4468LSS-13 SO-8 2500 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN4468LSS

Document number: DS31773 Rev. 5 - 2

8 5

N4468LS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

N4468LS

YY

WW

1 4

= Manufacturer’s Marking
N4468LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 6

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October 2013

© Diodes Incorporated





)

g

g

g

g

r

DMN4468LSS

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (Note 5)

Steady

State

A = +25°C

T

A = +70°C

T

D

I

10

9

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 50 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

Thermal Resistance, Junction to Case (Note 6)

NEW PRODUCT

Operating and Storage Temperature Range

P

R

R

T

J, TSTG

D

JA

Jc

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

30 — — V
— — 1.0 μA

— — ±100 nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

1.05 — 1.95 V

—

— 8 — S

|

fs

— 0.73 0.95 V

11
15

14
20

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C
C
C

R

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s

d

f

— 867 — pF
— 85 — pF
— 81 — pF
— 1.39 — Ω
— 18.85 — nC
— 2.59 — nC
— 6.15 — nC
— 5.46 — ns
— 14.53 — ns
— 18.84 — ns
— 6.01 — ns

DMN4468LSS

Document number: DS31773 Rev. 5 - 2

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www.diodes.com

1.52 W
82 °C/W

8.2 °C/W

-55 to +150 °C

VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 11.6A

V

mΩ

GS

VGS = 4.5V, ID = 10A
VDS = 5V, ID = 11.6A
VGS = 0V, IS = 1A

= 10V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= 10V, VDS = 15V,

V

GS

I

=11.6A

D

= 15V, VGS = 10V,

V

DD

= 1.3Ω, RG = 3Ω, ID = 1A

R

L

October 2013

© Diodes Incorporated