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DMN4040SK3
Product Summary
I
V
R
(BR)DSS
30m @ V
40V
54m @ VGS = 4.5V 10.3A
DS(ON)
= 10V 13.8A
GS
D
TA = 25°C
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
) and yet maintain superior switching
DS(on)
TO252-3L
Top View
GS
Top View
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: TO252-3L
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.33 grams (approximate)
D
G
D
S
Equivalent Circuit
Pin-Out
Ordering Information (Note 3)
Part Number Case Packaging
DMN4040SK3-13 TO252-3L 2500 / Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N4040S
YYWW
DMN4040SK3
Document number: DS32043 Rev. 2 - 2
Logo
Part no.
Xth wee k: 01 ~ 53
Year: “09” = 2009
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated
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DMN4040SK3
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
Continuous Drain Current (Note 4) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Steady
State
t ≤ 10s
Steady
State
t ≤ 10s
= 25°C
A
T
= 70°C
A
T
= 25°C
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R
Power Dissipation (Note 5) t ≤ 10s
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s R
Operating and Storage Temperature Range
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
D
I
DM
P
D
JA
P
D
JA
P
D
JA
, T
T
J
STG
40 V
±20 V
6.0
4.8
9.3
7.4
13.8
11.0
6.9
5.5
10.3
8.2
A
A
A
A
A
50 A
1.71 W
72.9 °C/W
4.1 W
30.8 °C/W
8.9 W
14 °C/W
-55 to +150 °C
Electrical Characteristics @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
40 - - V
- - 1.0
- - ±100 nA
VGS = 0V, ID = 250A
μA
= 40V, VGS = 0V
V
DS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
1.8 2.3 3.0 V
- 20 30
- 43 54
|
- 11 - S
- 0.76 1.0 V
VDS = VGS, ID = 250A
= 10V, ID = 12A
V
mΩ
GS
V
= 4.5V, ID = 6A
GS
VDS = 5V, ID = 12A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
oss
C
rss
R
Q
Q
Q
Q
t
D(on
t
t
D(off
t
iss
s
d
f
- 945 -
- 69 -
- 58 -
- 1.45 -
- 8.4 -
- 18.6 -
- 3.3 -
- 2.2 -
- 6.4 - ns
- 9.7 - ns
- 19.8 - ns
- 3.1 - ns
V
= 20V, VGS = 0V,
pF
Ω
nC
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V
= 4.5V, VDS = 20V, ID = 12A
GS
V
= 10V, VDS = 20V,
GS
= 12A
I
D
V
= 10V, VDS = 20V,
GS
R
= 1.6, RG = 3
L
DMN4040SK3
Document number: DS32043 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated