Diodes DMN4040SK3 User Manual

D

DMN4040SK3

Product Summary

I

V

R

(BR)DSS

30m @ V

40V

54m @ VGS = 4.5V 10.3A

DS(ON)

= 10V 13.8A

GS

D

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

TO252-3L

Top View

GS

Top View

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-3L

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.33 grams (approximate)

D

G

D

S

Equivalent Circuit

Pin-Out

Ordering Information (Note 3)

Part Number Case Packaging

DMN4040SK3-13 TO252-3L 2500 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

N4040S

YYWW

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

Logo

Part no.

Xth wee k: 01 ~ 53
Year: “09” = 2009

1 of 6

www.diodes.com

October 2010

© Diodes Incorporated

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g

g

g

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r

)

DMN4040SK3

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

Steady

State
t ≤ 10s
Steady

State
t ≤ 10s

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R
Power Dissipation (Note 5) t ≤ 10s
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s R
Operating and Storage Temperature Range

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

D

I

DM

P

D

JA

P

D

JA

P

D

JA

, T

T

J

STG

40 V

±20 V

6.0

4.8

9.3

7.4

13.8

11.0

6.9

5.5

10.3

8.2

A

A

A

A

A

50 A

1.71 W

72.9 °C/W

4.1 W

30.8 °C/W

8.9 W
14 °C/W

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

40 - - V

- - 1.0

- - ±100 nA

VGS = 0V, ID = 250A

μA

= 40V, VGS = 0V

V

DS

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

1.8 2.3 3.0 V

- 20 30

- 43 54

|

- 11 - S

- 0.76 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 12A

V

mΩ

GS

V

= 4.5V, ID = 6A

GS

VDS = 5V, ID = 12A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

oss

C

rss

R
Q

Q
Q
Q

t

D(on

t

t

D(off

t

iss

s
d

f

- 945 -

- 69 -

- 58 -

- 1.45 -

- 8.4 -

- 18.6 -

- 3.3 -

- 2.2 -

- 6.4 - ns

- 9.7 - ns

- 19.8 - ns

- 3.1 - ns

V

= 20V, VGS = 0V,

pF

Ω

nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

V

= 4.5V, VDS = 20V, ID = 12A

GS

V

= 10V, VDS = 20V,

GS

= 12A

I

D

V

= 10V, VDS = 20V,

GS

R

= 1.6, RG = 3

L

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

2 of 6

www.diodes.com

October 2010

© Diodes Incorporated