Diodes DMN4040SK3 User Manual

D

DMN4040SK3

Product Summary

I

V

R

(BR)DSS

30m @ V

40V

54m @ VGS = 4.5V 10.3A

DS(ON)

= 10V 13.8A

GS

D

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

TO252-3L

Top View

GS

Top View

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-3L

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram Below

• Weight: 0.33 grams (approximate)

D

G

D

S

Equivalent Circuit

Pin-Out

Ordering Information (Note 3)

Part Number Case Packaging

DMN4040SK3-13 TO252-3L 2500 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

N4040S

YYWW

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

Logo

Part no.

Xth wee k: 01 ~ 53 Year: “09” = 2009

1 of 6

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October 2010

)

g

)

r

)

DMN4040SK3

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Steady

State

Steady

State t ≤ 10s Steady

State t ≤ 10s

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R Power Dissipation (Note 5) t ≤ 10s Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s R Operating and Storage Temperature Range

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

D

I

DM

P

D

JA

P

D

JA

P

D

JA

, T

T

J

STG

40 V

±20 V

6.0

4.8

9.3

7.4

13.8

11.0

6.9

5.5

10.3

8.2

A

50 A

1.71 W

72.9 °C/W

4.1 W

30.8 °C/W

8.9 W 14 °C/W

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage

BV

I I

DSS DSS GSS

40 - - V

- - 1.0

- - ±100 nA

VGS = 0V, ID = 250A

μA

= 40V, VGS = 0V

V

DS

VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

1.8 2.3 3.0 V

- 20 30

- 43 54

|

- 11 - S

- 0.76 1.0 V

VDS = VGS, ID = 250A

= 10V, ID = 12A

V

mΩ

GS

V

= 4.5V, ID = 6A

GS

VDS = 5V, ID = 12A

VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance

Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

oss

C

rss

R Q

Q Q Q

t

D(on

t

D(off

t

iss

s d

f

- 945 -

- 69 -

- 58 -

- 1.45 -

- 8.4 -

- 18.6 -

- 3.3 -

- 2.2 -

- 6.4 - ns

- 9.7 - ns

- 19.8 - ns

- 3.1 - ns

V

= 20V, VGS = 0V,

pF

Ω

nC

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

V

= 4.5V, VDS = 20V, ID = 12A

GS

V

= 10V, VDS = 20V,

GS

= 12A

I

D

V

= 10V, VDS = 20V,

GS

R

= 1.6, RG = 3

L

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

2 of 6

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October 2010

R

N C

URREN

T

R

CUR

RENT

R

OUR

CE ON-R

TANC

R

OUR

C

R

OUR

C

DMN4040SK3

30

25

(A)

20

15

AI

V = 10V

V = 4.5V

GS

V = 4.0V

GS

V = 3.5V

GS

10

D

I, D

5

0

0 0.5 1 1.5 2

V , DRAIN-SOURCE VOLTAGE (V)

DS

V = 2.5V

GS

Fig. 1 Typical Output Characteristic

0.05

Ω

0.04

V = 4.5V

GS

0.03

V = 10V

GS

0.02

0.01

V = 3.0V

GS

30

V = 5V

25

(A)

20

DS

15

AIN

10

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

0.08

Ω

E ( )

0.07

V = 4.5V

GS

0.06

ESIS

0.05

T = 150°C

T = 125°C

A

T = 85°C

A

T = 150°C

T = 125°C

T = 85°C

0.04

0.03

T = 25°C

AIN-S

0.02

T = -55°C

, D

T = -55°C

A

T = 25°C

A

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

0 5 10 15 20 25 30

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

1.6

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain C urrent and Tempera tu r e

0.08

0.07

1.4

0.06

E

1.2

AIN-S

V = 4.5V

1.0

, D

DSON

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150

GS

I = 10A

D

V = 10V

GS

I = 20A

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

E

0.05

V = 4.5V

0.04

AIN-S , D

0.03

DSON

0.02

ON-RESISTANCE (NORMALIZED)

0.01

0

-50 -25 0 25 50 75 100 125 150

GS

I = 10A

D

V = 10V

GS

I = 20A

D

T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 On-Resistance Variation with Temperature

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

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October 2010

GATE T

H

R

H

O

T

G

OUR

CE CUR

R

T

C, CAPACITANC

F

GE CUR

RENT

G

T

OUR

C

OLT

G

DMN4040SK3

3.0

E (V)

2.5

A

20

16

L

(A) EN

12

T = 25°C

A

LD V

ES

2.0

1.5

I = 250µA

D

I = 1mA

D

8

1.0

S

I, S

0.5

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

A

10,000

f = 1MHz

)

E (p

1,000

C

iss

4

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Dio de Forward Voltag e vs. Current

10,000

(nA)

1,000

T = 150°C

T = 125°C

A

100

C

100

10

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Total Capacitance

10

8

E (V)

oss

C

rss

10

DSS

I , LEAKA

1

0102030

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Leakage Current

vs. Drain- Source Voltage

T = 85°C

A

T = 25°C

A

V = 20V

DS

I = 12A

D

A

6

E V

4 E-S A

2

GS

V,

0

02468101214161820

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Ga t e- C harge Ch aracteris tics

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

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October 2010

T

R

T T

HER

R

TANC

DMN4040SK3

1

E

D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001

Package Outline Dimensions

E

b3

L3

D

H

L4

e

2X b2

3X b

D = 0.9

R (t) = r(t) *

θ

JA

R = 74°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

1

Fig. 12 Transient Thermal Response

A

c2

A2

E1

A1

L

a

TO252-3L

Dim Min Max Typ

A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07

b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531

D 6.00 6.20 6.10

D1 5.21

e

− −

2.286

E 6.45 6.70 6.58

E1 4.32

− −

H 9.40 10.41 9.91

L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83

a 0° 10°

−

All Dimensions in mm

Suggested Pad Layout

Y2

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

Y1

X1

X2

E1

Dimensions Value (in mm)

Z 11.6

X1 1.5

Z

C

X2 7.0 Y1 2.5 Y2 7.0

C 6.9

E1 2.3

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DMN4040SK3

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT

DMN4040SK3

Document number: DS32043 Rev. 2 - 2

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