Diodes DMN4036LK3 User Manual

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f

D

Product Summary

I

V

R

(BR)DSS

40V

DS(on)

36mΩ @ V

61mΩ @ VGS= 4.5V

GS

= 10V

T

= 25°C

A

12.2A

9.4A

D

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Backlighting

• DC-DC Converters

• Power management functions

TO252-3L

TOP VIEW PIN OUT -TOP VIEW

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low on-resistance

• Fast switching speed

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-3L

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

GS

Product Line o

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D

G

S

Equivalent Circuit

DMN4036LK3

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN4036LK3-13 N4036L 13 16 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMN4036LK3

Document number: DS32122 Rev. 2 - 2

= Manufacturer’s Marking

YYWW

N4036L

www.diodes.com

N4036L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)

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DMN4036LK3

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage (Note 2)

(Note 4)

Continuous Drain current

V

= 10V

GS

TA = 70°C (Note 4)
(Note 3) 8.5

Pulsed Drain current

V

= 10V

GS

(Note 5)
Continuous Source current (Body diode) (Note 4)
Pulsed Source current (Body diode) (Note 5)

Thermal Characteristics @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

(Note 3)
Power dissipation

Linear derating factor

(Note 4)

(Note 6)

(Note 3)
Thermal Resistance, Junction to Ambient

(Note 4) 14.7

(Note 6) 59.0
Thermal Resistance, Junction to Lead (Note 7)
Operating and storage temperature range

Notes: 2. AEC-Q101 VGS maximum is ±16V.

3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

4. Same as note 3, except the device is measured at t ≤ 10 sec.

5. Same as note 3, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

7. Thermal resistance from junction to solder-point (at the end of the drain lead).

V

DSS

V

GS

40 V

±20

V

12.2

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D

IDM

I

S

I

SM

9.7

31.7 A

10.4 A

31.7 A

A

4.12
33

P

D

8.49

67.9

W

mW/°C

2.12

16.9

30.3

R

JA

θ

R

JL

T

, T

J

STG

3.1

-55 to 150

°C/W

°C

DMN4036LK3

Document number: DS32122 Rev. 2 - 2

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Thermal Characteristics

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Diodes Incorporated

DMN4036LK3

R

DS(on)

Limited

10

DC

100m

Drain Current (A)

D

I

1

1s

100ms

T

=25°C

amb

25mm x 25mm

1oz FR4

110

10ms

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

T

60
50
40
30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

=25°C

amb

25mm x 25mm

1oz FR4

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse

Pulse Width ( s)

Transient Thermal Impedance

R

DS(on)

Limited

10

DC

100m

Drain Current (A)

D

I

1

50mm x 50mm

T

=25°C

amb

2oz FR4

1s

100ms

10ms

1ms

100µs

110

VDS Drain-Sou rce Voltage (V)

Safe Operating Area

35
30
25
20
15
10

5
0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

T

=25°C

amb

50mm x 50mm

2oz FR4

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse

Pulse Width (s)

Transient Thermal Impedance

100

10

25mm x 25mm

1oz FR4

1

100µ 1m 10m 100m 1 10 100 1k

Max Power Dissipation (W)

Pulse Width (s)

Single Pulse

T

=25°C

amb

50mm x 50mm

2oz FR4

Pulse Power Dissipation

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

50mm x 50mm

2oz FR4

25mm x 25mm

1oz FR4

Derating Curve

DMN4036LK3

Document number: DS32122 Rev. 2 - 2

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March 2010

© Diodes Incorporated