Diodes DMN4034SSS User Manual

f
Product Summary
V
R
(BR)DSS
40V
34mΩ @ V
59mΩ @ VGS = 4.5V
DS(on)
GS
= 10V
= 25°C
T
A
7.2A
5.5A
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DMN4034SSS
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
I
D
100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
Max Q
“Green” component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
rated
g
Description and Applications
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ADVANCE INFORMATION
Motor control
Backlighting
DC-DC Converters
Power management functions
SO-8
Top View
Ordering Information (Note 1)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
G
S
Top View
Equivalent Circuit
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN4034SSS-13 N4034SS 13 12 2,500
Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
DMN4034SSS
Document Number DS32106 Rev 2 - 2
N4034SS
YY
WW
= Manufacturer’s Marking N4034SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)
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DMN4034SSS
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Unit
Drain-Source voltage Gate-Source voltage (Note 2) Single Pulsed Avalanche Energy (Note 7) Single Pulsed Avalanche Current (Note 7)
Continuous Drain current
Pulsed Drain current
V
GS
V
GS
= 10V
= 10V Continuous Source current (Body diode) (Note 4) Pulsed Source current (Body diode) (Note 5)
Thermal Characteristics @T
ADVANCE INFORMATION
Power dissipation Linear derating factor
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead (Note 6)
Operating and storage temperature range
Notes: 2. AEC-Q101 VGS maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 100µH, V
Characteristic Symbol Value Unit
V
DSS
V
GS
E
AS
I
AS
(Note 4) TA = 70°C (Note 4)
I
D
(Note 3) (Note 5)
= 25°C unless otherwise specified
A
IDM
I
S
I
SM
(Note 3)
P
D
(Note 4) (Note 3)
(Note 4) 44.5
= 40V.
DD
R
JA
θ
R
JL
T
, T
J
STG
40 V
±20
V
27 mJ
15.25 A
7.2
5.8
A
5.4
33.0 A
4.1 A
33.0 A
1.56
12.5
2.8
W
mW/°C
22.5 80
°C/W
37
-55 to 150
°C
DMN4034SSS
Document Number DS32106 Rev 2 - 2
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Thermal Characteristics
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DMN4034SSS
R
Limited
DS(on)
10
1
DC
100m
10m
Drain Current (A)
D
1m
I
1s
Single Pulse
T
=25°C
amb
100ms
10ms
1ms
100µs
ADVANCE INFORMATION
100m 1 10
VDS Drain-Source Voltage (V)
Safe Operating Area
80 70 60 50 40 30 20 10
Thermal Resistance (°C/W)
T
=25°C
amb
D=0.5
D=0.2
0
100µ 1m 10m 100m 1 10 100 1k
Single Pulse
D=0.05
D=0.1
Pulse Width (s)
Transient Thermal Impedance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 0 20 40 60 80 100 120 140 160
Max Power Dissipation (W)
Temperature (°C)
25mm x 25mm
1oz FR4
Derating Curve
Single Pulse
T
=25°C
100
10
Maximum Power (W)
1
100µ 1m 10m 100m 1 10 100 1k
amb
Pulse Width (s)
Pulse Power Dissipation
DMN4034SSS
Document Number DS32106 Rev 2 - 2
3 of 9
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