Diodes DMN4031SSD User Manual

4

8

5

0

31S

Y

W

4

8

5

0

31S

Y

DMN4031SSD

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

max

I

D

7.0A

5.6A

V

(BR)DSS

40V

R

31mΩ @ V

50mΩ @ VGS = 4.5V

DS(ON)

max

= 10V

GS

TA = +25°C (Note 5)

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Motor control

• Backlighting

• Power Management Functions

• DC-DC Converters

ADVANCE INFORMATION

SO-8

Top View

S2

G2

S1

G1

Internal Schematic

Top View

Features and Benefits

• Low On-Resistance

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.072 grams (approximate)

D1

D2

D2

D1

D1

G1

S1

N-channel MOSFET

N-channel MOSFET

e3

D2

G2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMN4031SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N4

D

Y WW

1

Chengdu A/T Site

DMN4031SSD

Document number: DS35410 Rev. 4 - 2

1

Shanghai A/T Site

N4

Y W

D

1 of 6

www.diodes.com

= Manufacturer’s Marking
N4031SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

February 2014

© Diodes Incorporated

)

)

g

g

g

)

r

)

DMN4031SSD

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (Note 7)

Steady

State

Steady

State

Steady

State

Steady

State

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

40 V

±20 V

5.2

4.1

4.3

3.4

7.0

5.6

5.8

4.7

A

A

A

A

20 A

Thermal Characteristics (@T

ADVANCE INFORMATION

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) R
Operating and Storage Temperature Range

Characteristic Symbol Value Units

= +25°C, unless otherwise specified.)

A

T

J, TSTG

P

D

θJA

P

D

θJA

1.42 W
88 °C/W

2.6 W
48 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

40
— —
— —

—

— V

1 μA

±100 nA

VGS = 0V, ID = 10mA
VDS = 40V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
On-state drain current

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

I

D(ON

R

DS (ON)

|Y
V

fs

SD

1.6 2.4 3.0 V
20
—
—
—

|

—

— —

19 31
44 50
11 — S

0.74 1.0 V

VDS = VGS, ID = 250μA

A

VGS = 10V, VDS = 5A

= 10V, ID = 6A

V

mΩ

GS

V

= 4.5V, ID = 5A

GS

VDS = 5V, ID = 6A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. The value in any given application depends on user’s specific board design

6. Device mounted on 1” x 1” FR-4PCB with high coverage 1 oz. Copper, single sided.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect

9. Guaranteed by design. No subject to production testing.

T

T

Q
Q

D(on

T

D(off

T

s

d

f

—
—
—
—
—
—
—
—
—
—
—
—

945

69
58

1.45

8.4

18.6

3.3

2.2

6.4

9.7

19.8

3.1

—
—
—
—
—
—
—
—
—
—
—
—

pF

V

= 20V, VGS = 0V,

pF
pF

nC
nC
nC
nC

DS

f = 1.0MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

= 10V, VDS = 20V,

V

GS

I

= 12A

D

ns
ns
ns

= 10V, VDS = 20V,

V

GS

= 1.6Ω, RG= 3Ω

R

L

ns

DMN4031SSD

Document number: DS35410 Rev. 4 - 2

2 of 6

www.diodes.com

February 2014

© Diodes Incorporated