Diodes DMN4027SSD User Manual

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YY
Product Summary
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DMN4027SSD
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
V
(BR)DSS
40V
R
27m @ V
47m @ VGS = 4.5V
DS(on)
Max
= 10V
GS
T
Description
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control
ADVANCE INFORMATION
Backlighting DC-DC Converters Power Management Functions
SO-8
G1
S2
G2
Top View
I
D
= +25C
A
7.1A
5.4A
Top View
 Low on-resistance  Fast switching speed  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020  Terminals Connections: See diagram below  Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
e3
D1S1
D1
D2
D2
Equivalent Circuit
Ordering Information (Note 4)
Part Number Compliance Case Packaging
DMN4027SSD-13 Standard SO-8 2500 / Tape & Reel
DMN4027SSDQ-13 Automotive SO-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
N4027SD
WW
DMN4027SSD
Document Number DS33040 Rev 2 - 2
N4027DQ
YY
WW
= Manufacturer’s Marking N4027SD = Product Type Marking Code for DMN4027SSD-13 N4027DQ = Product Type Marking Code for DMN4027SSDQ-13 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-53)
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DMN4027SSD
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage Gate-Source Voltage (Note 5)
(Notes 7)
Continuous Drain Current
V
GS
= 10V
TA = +70°C (Notes 7)
V
DSS
V
GS
I
D
40 V
20
7.1
5.7
(Notes 6) 5.4
Pulsed Drain Current
V
= 10V
GS
(Notes 8) Continuous Source Current (Body diode) (Notes 7) Pulsed Source Current (Body diode) (Notes 8)
IDM
I
S
I
SM
28.0 A
3.3 A
28.0 A
Thermal Characteristics (@T
ADVANCE INFORMATION
Power Dissipation Linear Derating Factor
Thermal Resistance, Junction to Ambient
Characteristic Symbol Value Unit
= +25°C, unless otherwise specified.)
A
(Notes 6 & 9)
(Notes 6 & 10)
P
D
(Notes 7 & 9) (Notes 6 & 9)
(Notes 6 & 10) 70
R
JA
1.25
10.0
1.8
14.3
2.14
17.2 100
(Notes 7 & 9) 58 Thermal Resistance, Junction to Lead (Notes 9 & 11) Operating and Storage Temperature Range
Notes: 5. AEC-Q101 VGS maximum is 16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.
7. Same as note (3), except the device is measured at t 10 sec.
8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
R
JL
T
, T
J
STG
53
-55 to +150
V
A
W
mW/C
C/W
C
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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Thermal Characteristics
ADVANCE INFORMATION
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DMN4027SSD
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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DMN4027SSD
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
DSS
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13) Diode Forward Voltage (Note 12)
V
R
DS(ON)
V
GS(th)
g
Reverse recovery time (Note 13) Reverse recovery charge (Note 13)
DYNAMIC CHARACTERISTICS (Note 13)
ADVANCE INFORMATION
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 14) Total Gate Charge Note 14) Gate-Source Charge Note 14) Gate-Drain Charge Note 14) Turn-On Delay Time Note 14)
Q
C C C
Q
Q Q Q
t
D(on)
Turn-On Rise Time Note 14) Turn-Off Delay Time (Note 14)
t
D(off)
Turn-Off Fall Time Note 14)
Notes: 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%.
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
40
DSS
1.0
fs
SD
t
rr
rr
iss
oss
rss

g g
gs
gd
t
r
 
t
f
V
0.5 µA
100
3.0 V
0.017 0.027
0.031 0.047
22.8
nA
S
0.86 1.1 V
12.1
5.1
604 106
59.6
6.3
12.9
2.4
3.3
3.1
3.1
15.4
7.5
 
  

      
ns nC
pF pF pF nC nC nC nC ns ns ns ns
ID = 250µA, VGS = 0V VDS = 40V, VGS = 0V V
= 20V, VDS = 0V
GS
ID = 250µA, VDS = VGS
= 10V, ID = 7A
V
GS
= 4.5V, ID = 6A
V
GS
VDS = 15V, ID = 7A IS = 7A, VGS = 0V
I
= 2.1A, di/dt = 100A/µs
S
= 20V, VGS = 0V
V
DS
f = 1MHz
VGS = 4.5V
V
DS
= 7A
V
= 10V
GS
V
= 20V, VGS = 10V
DD
I
= 1A, RG  6.0
D
I
D
= 20V
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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Typical Characteristics
ADVANCE INFORMATION
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DMN4027SSD
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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Typical Characteristics (cont.)
ADVANCE INFORMATION
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DMN4027SSD
Test Circuits
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
E1
E
A1
Detail ‘A’
h
°
45
A2
A3
A
e
b
D
L
0.254
Gaug e Plane Seating Plane
7°~9
°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Detail ‘A’
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Dim Min Max
SO-8
A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10 E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0 8

All Dimensions in mm
DMN4027SSD
Dimensions Value (in mm)
X 0.60 Y 1.55
C1
C2
Y
C1 5.4 C2 1.27
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
ADVANCE INFORMATION
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
Diodes Incorporated
DMN4027SSD
DMN4027SSD
Document Number DS33040 Rev 2 - 2
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