Diodes DMN4026SSD User Manual

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DMN4026SSD

40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D

TA = +25°C

9.0A

7.8A

V

(BR)DSS

40V

R

DS(ON) MAX

24mΩ @V

32mΩ @VGS = 4.5V

= 10V

GS

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(ON)

Applications

 Motor Control
 Backlighting
 Power Management Functions
 DC-DC Converters

SO-8

Top View

G1

S2

G2

Top View

Internal Schematic

Features

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram below
 Terminals: Finish  Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D2

S2

D1S1

D1

D2

D2

G1

D 1

S1

Equivalent Circuit

G2

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

DMN4026SSD-13 Standard SO-8 2,500/Tape & Reel

DMN4026SSDQ-13 Automotive SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN4026SSD

Document number: DS36351 Rev. 3 - 2

( Top View )

8 5

N4026SD

YY

WW

1 4

www.diodes.com

1 of 6

Logo
Part no.

Xth week: 01 ~53

: "12" =2012

Yea

August 2013

© Diodes Incorporated

V

V

DMN4026SSD

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 7) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

V

DSS

V

GSS

T

Steady

State

T<10s

= +25°C

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

I

D

I

D

I

S

I

DM

alue Units

40 V

±20 V

7.0

5.6

9.0

7.2

A

A

2.5 A
70 A

Thermal Characteristics

Characteristic Symbol

= +25°C

T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

A

TA = +70°C

Steady State

t<10s 59

= +25°C

T

A

TA = +70°C

Steady State

t<10s 43

P

R

P

R
R

T

J, TSTG

θJA

θJA

θJC

D

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS
DSS
GSS

40

 
 
 

V

1 µA

100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage

V

R

DS(ON)

GS(th)

V



SD

1






15 24

20 32

0.7 1.0 V

3 V

mΩ

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.



C

iss

C

oss

C

rss



R

G



Q

gs

Q

gd



t

D(on)



t

r

t

D(off)



t

f



t

rr

Q

rr














1060

84

58

1.6

8.8

19.1

3.0

2.5

5.3

7.1

15.1

4.8

10.5

4.15























pF

Ω

nC

nS

nS

nC

DMN4026SSD

Document number: DS36351 Rev. 3 - 2

2 of 6

www.diodes.com

alue Units

1.3

0.8
98

1.8

1.1

W

°C/W

W

71

°C/W

11.8

-55 to +150 °C

VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250µA
V

= 10V, ID = 6A

GS

VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1.0A

= 20V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz

= 20V, ID = 8A

V

DS

= 25V, RL = 2.5Ω

V

DD

= 10V, RG = 3Ω

V

GS

IF = 8A, di/dt = 100A/μs
I

= 8A, di/dt = 100A/μs

F

August 2013

© Diodes Incorporated