Diodes DMN4010LK3 User Manual

Product Summary

I

V

R

(BR)DSS

40V

11.5m @ V

14.5m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

D

TC = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Power management functions

• DC-DC Converters

• Backlighting

NEW PRODUCT

Top View

max

39A

35A

Pin Out Top View

DMN4010LK3



Green

40V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252-3L

• Case Material: Molded Plastic, “Green” Molding Compound.

• UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Weight: 0.33 grams (approximate)

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN4010LK3-13 TO252 2500/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated.

DMN4010LK3

Document number: DS36743 Rev. 2 - 2

N4010L

YYWW

=Manufacturer’s Marking
N4010L = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 to 53)

1 of 6

www.diodes.com

February 2014

© Diodes Incorporated

θ

DMN4010LK3

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, Duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH

Avalanche Energy (Notes 7) L = 0.1mH

Steady

State

Steady

State

T

= +25°C

C

= +70°C

T

C

= +25°C

T

A

T

= +70°C

A

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

I

AS

E

AS

40 V

±20 V

39
31

11.9

9.5

A

A

2 A
80 A
27 A

37 mJ

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

P

Steady state

t<10s 31

Steady state

t<10s 21

R

P

R

R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

1.6 W
78

°C/W

2.4 W
51

°C/W

4.7

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

40 — — V

— — 1 µA

— — ±100 nA

VGS = 0V, ID = 250A

VDS = 32V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

V

SD

1.0 — 3.0 V

— 8.7 11.5

11.1 14.5

— 0.72 — V

VDS = VGS, ID = 250A

= 10V, ID = 14A

V

m

GS

V

= 4.5V, ID = 11A

GS

VGS = 0V, IS = 14A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

POWERDI is a registered trademark of Diodes Incorporated.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C

7. I

AS

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN4010LK3

Document number: DS36743 Rev. 2 - 2

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

www.diodes.com

—

—

—

— 1.7 —

1810

135

112

— 17 —

— 37 —

— 5.6 —

— 7.1 —

—

—

—

—

— 12.2 — ns

— 5.4 — nC

5.1

13

36

13

2 of 6

—

—

—

pF

V

DS

pF

f = 1.0MHz

pF



VDS = 0V, VGS = 0V, f = 1MHz

nC

nC

V

DS

nC

I

D

nC

— ns

— ns

— ns

V

GS

R

G

— ns

IS = 3A, dI/dt = 100A/s

IS = 3A, dI/dt = 100A/s

= 20V, VGS = 0V,

= 20V, ,

= 14A

= 10V, VDS = 20V,

= 6, ID = 14A

© Diodes Incorporated

February 2014