Diodes DMN3900UFA User Manual
Product Summary
I
V
R
(BR)DSS
760m @ V
30V
930m @ VGS = 2.5V
1500m @ VGS = 1.8V
DS(on)
= 4.5V
GS
D
TA = +25°C
0.65A
0.58A
0.45A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
Load switch
Portable applications
Power Management Functions
ESD PROTECTED
X2-DFN0806-3
Bottom View
Ordering Information (Note 4)
DMN3900UFA
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.4mm ultra low profile package for thin application
0.48mm
Low V
Low R
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2
package footprint, 16 times smaller than SOT23
can be driven directly from a battery
GS(th),
DS(on)
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.00043 grams (approximate)
S
D
G
Top View
Package Pin Configuration
e4
Gate
Gate
Protection
Diode
Equivalent Circuit
Drain
Source
Body
Diode
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3900UFA-7B NU 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
DMN3900UFA-7B
NU
Top View
Bar Denotes Gate
and Source Side
NU = Product Type Marking Code
1 of 6
www.diodes.com
August 2013
© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
T
Continuous Drain Current
V
GS
= 4.5V
= +70°C (Note 6)
A
(Note 5)
Pulsed Drain Current (Note 7)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 5) 390
(Note 6)
(Note 5) 327
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
DMN3900UFA
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
R
JA
T
, T
J
STG
30
±8
V
0.65
0.52
0.55
A
2.5
490
255
mW
°C/W
-55 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30
— —
— —
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
V
R
DS(on)
|Y
V
GS(th)
fs
SD
0.45 — 0.95 V
—
40
|
— 0.7 1.2 V
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 PCB, with minimum recommended pad layout, except the device measured at t 10 sec.
7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
gd
t
t
g
g
gs
r
f
— 42.2 —
— 4.5 —
— 3,4 —
— 468 —
— 0.7 —
— 0.11 —
— 0.15 —
— 10.5 —
— 7.8 —
— 80.6 —
— 23.4 —
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
2 of 6
www.diodes.com
—
— V
1 A
3 A
400 760
480 930
617 1500
— —
VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 200mA
GS
m
V
= 2.5V, ID = 100mA
GS
V
= 1.8V, ID = 75mA
GS
mS
VDS = 3V, ID = 10mA
VGS = 0V, IS = 300mA
pF
VDS = 25V, VGS = 0V,
pF
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
V
= 4.5V, VDS = 15V,
nC
nC
GS
= 200mA
I
D
ns
ns
ns
= 10V, I
V
DS
= 4.5V, RG = 6
V
GS
D
ns
= 200mA
August 2013
© Diodes Incorporated
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