Diodes DMN3730UFB4 User Manual
A
f
Product Summary
Diodes Incorporated
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Product Line o
DMN3730UFB4
I
V
R
(BR)DSS
30V
460m @ V
560m @ VGS= 2.5V
DS(on)
= 4.5V
GS
D
TA = +25°C
0.9A
0.7A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
Load Switch
Portable Applications
Power Management Functions
ESD PROTECTED TO 2kV
X2-DFN1006-3
Bottom View
0.4mm ultra low profile package for thin application
0.6mm
Low V
Low R
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
2
package footprint, 10 times smaller than SOT23
can be driven directly from a battery
GS(th),
DS(on)
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
S
D
G
Top View
e3
Drain
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
Body
Diode
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN3730UFB4-7 NF 7 8 3000
DMN3730UFB4-7B NF 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN3730UFB4
Document number: DS35017 Rev. 5 - 2
DMN3730UFB4-7 DMN3730UFB4-7B
NF NF
Top View
Dot Denotes
Drain Side
Top View
Bar Denotes Gate
and Source Side
1 of 6
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NF = Product Type Marking Code
July 2013
© Diodes Incorporated
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f
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 4.5V
(Note 6)
T
= +70°C (Note 6)
A
V
V
DSS
GSS
I
D
(Note 5) 0.75
Pulsed Drain Current (Note 7)
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 6)
(Note 5) 0.47
(Note 6)
(Note 5) 258
P
D
R
θJA
T
, T
J
STG
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30 — — V
— —
— —
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
V
R
DS(on)
|Y
V
GS(th)
SD
0.45 — 0.95 V
—
—
—
40
|
fs
— 0.7 1.2 V
—
—
—
— —
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
6. Same as note 4, except the device measured at t 10 sec.
7. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10s.
8. Measured under pulsed conditions to minimize self-hea ting effect. Pulse width 300µs; duty cycle 2%
9. For design aid only, not subject to production testing.
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
— 64.3 —
— 6.1 —
— 4.5 —
— 70 —
— 1.6 —
— 0.2 —
— 0.2 —
— 3.5 —
— 2.8 —
— 38 —
— 13 —
DMN3730UFB4
Document number: DS35017 Rev. 5 - 2
2 of 6
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Diodes Incorporated
460
560
730
-55 to +150 °C
1 µA
3 µA
30
±8
0.91
0.73
3
0.69
180
VGS = 0V, ID = 10μA
= 30V, VGS = 0V
V
DS
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250μA
= 4.5V, ID = 200mA
V
GS
mΩ
V
= 2.5V, ID = 100mA
GS
= 1.8V, ID = 75mA
V
GS
mS
VDS = 3V, ID = 10mA
VGS = 0V, IS = 300mA
pF
= 25V, VGS = 0V,
V
Ω
DS
f = 1.0MHz
= 0V, VGS = 0V, f = 1MHz
V
DS
V
= 4.5V, VDS = 15V,
GS
= 1A
I
D
pF
pF
nC
nC
nC
ns
ns
ns
= 10V, I
V
DS
V
= 10V, RG = 6Ω
GS
ns
DMN3730UFB4
V
A
W
°C/W
= 1A
D
July 2013
© Diodes Incorporated
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