Diodes DMN3730UFB User Manual

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f

Product Summary

I

V

R

(BR)DSS

30V

DS(on)

460mΩ @ V
560mΩ @ VGS= 2.5V

= 4.5V

GS

D

TA = 25°C

0.9A

0.7A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• Load switch

• Portable applications

• Power Management Functions

ESD PROTECTED TO 2kV

DFN1006-3

Bottom View

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Diodes Incorporated

DMN3730UFB

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• 0.5mm ultra low profile package for thin application

• 0.6mm

• Low V

•

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2kV

• Qualified to AEC-Q101 Standards for High Reliability

2

package footprint, 10 times smaller than SOT23

can be driven directly from a battery

GS(th),

Low R

DS(on)

Mechanical Data

• Case: DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drain

Body

S

D

G

Top View

Internal Schematic

Gate

Gate
Protection
Diode

Equivalent Circuit

Diode

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN3730UFB-7 NE 7 8 3,000

DMN3730UFB-7B NE 7 8 10,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN3730UFB

Document number: DS35018 Rev. 3 - 2

DMN3730UFB-7 DMN3730UFB-7B

NENE

Top View

Dot Denotes

Drain Side

Top View

Bar Denotes Gate

and Source Side

1 of 6

www.diodes.com

NE = Product Type Marking Code

March 2011

© Diodes Incorporated

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Diodes Incorporated

DMN3730UFB

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current VGS = 4.5V

(Note 5)

T

=70°C (Note 5)

A

V
V

DSS
GSS

I

D

30
±8

0.91

0.73

V

A

(Note 4) 0.75

Pulsed Drain Current (Note 6)

I

DM

3 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

(Note 5)
(Note 4) 0.47
(Note 5)
(Note 4) 258

P

D

R

θJA

, T

T

J

STG

0.69

180

W

°C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

30 - - V

- - 1

- - 3

VGS = 0V, ID = 10μA

μA

VDS = 30V, VGS = 0V

μA

VGS = ±8V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 7)

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.45 - 0.95 V
460

- -

560
730

40 - - mS

|

- 0.7 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 200mA

mΩ

GS

= 2.5V, ID = 100mA

V

GS

= 1.8V, ID = 75mA

V

GS

VDS = 3V, ID = 10mA

VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in

steady-state condition.

5. Same as note 4, except the device measured at t ≤ 10 sec.

6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.

7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.

C

iss

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oss

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rss

R
Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

- 64.3 -

- 6.1 -

- 4.5 -

- 70 -

- 1.6 -

- 0.2 -

- 0.2 -

- 3.5 -

- 2.8 -

- 38 -

- 13 -

pF
pF
pF
Ω
nC
nC
nC

= 25V, VGS = 0V,

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

V

= 4.5V, VDS = 15V,

GS

= 1A

I

D

ns
ns
ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

D

ns

= 1A

DMN3730UFB

Document number: DS35018 Rev. 3 - 2

2 of 6

www.diodes.com

March 2011

© Diodes Incorporated