Diodes DMN3730U User Manual

A

f

30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23

Product Summary

I

Max (Note 5)

V

Max R

(BR)DSS

30V

DS(on)

460mΩ @ V
560mΩ @ VGS= 2.5V

= 4.5V

GS

D

TA = 25°C

0.94A

0.85A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

• Load switch

• Portable applications

• Power Management Functions

ESD PROTECTED TO 2kV

SOT23

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DMN3730U

Features and Benefits

• Low V

• Low R

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• ESD Protected Gate 2kV

• Qualified to AEC-Q101 Standards for High Reliability

can be driven directly from a battery

GS(th),
DS(on)

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish-Matte Tin.

• Weight: 0.08 grams (approximate)

Drain

G

D

S

Pin-Out

Gate

Gate
Protection
Diode

Equivalent Circuit

Body
Diode

Source

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN3730U-7 N3U 7 8 3,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N3U

YM

N3U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2

1 of 7

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July 2011

© Diodes Incorporated

A

f

P

P

T

R

T P

OWER

R

N C

URREN

T

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 6)

Steady

State

= 25°C (Note 5)

T

A

= 85°C (Note 5)

T

A

T

= 25°C (Note 4)

A

V
V

DSS
GSS

I

I

DM

D

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power Dissipation
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

(Note 4)
(Note 5) 0.71 W
(Note 4)
(Note 5) 177 °C/W

P

D

R

θJA

, T

T

J

STG

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper

6. Device mounted on minimum recommended pad layout test board, 10

μs pulse duty cycle = 1%.

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Diodes Incorporated

DMN3730U

30 V
±8 V

0.94

0.68

0.75
10 A

0.45 W

275 °C/W

-55 to +150 °C

A

Thermal Characteristics

100

90

(W)

80

Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)

JA

70
60

50

ANSIEN

40
30

EAK

20

(pk),

10

0

0.001 0.01 0.1 1 10 100 1000
T1, PULSE DURATION SECTION (sec)

Fig. 1 Single Maximum Power Dissipation

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2

2 of 7

www.diodes.com

100

R

DS(ON)

Limited

10

(A)

1

AI

0.1

D

I, D

0.01

0.001

T , (Max) = 150°C

J

T = 25°C

A

Single Pulse

0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE

I (A) @

D

P = 100ms

W

DS

I (A) @

D

P = 10ms

W

I (A) @ DC

D

I (A) @

D

P = 1ms

W

I (A) @

D

P = 1s

W

Fig. 2 SOA, Safe Oper at ion Area

I (A) @

D

P = 100µs

W

I (A) @

D

P = 10µs

W

July 2011

© Diodes Incorporated

A

f

)

g

g

g

g

)

r

)

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Diodes Incorporated

DMN3730U

1

r(t) @ D=0.5

r(t) @ D=0.3

0.1

r(t) @ D=0.1

r(t) @ D=0.05

r(t) @ D=0.01

r(t) @ D=0.7

r(t) @ D=0.9

0.01

r(t) @ D=0.005

R(t), TRANSIENT THERMAL RESISIT ANCE

r(t) @ D=Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

r(t) @ D=0.01

R (t) = r(t)*R

θθ

JA JA

R = 176C/W

θ

JA

Duty Cycle, D = t1/t2

t1, PULSE DURATION TIME (sec)

Fig. 3 Transient Thermal Resist ance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1

- - 3

VGS = 0V, ID = 10μA

μA
μA

= 30V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

ON CHARACTERISTICS
Gate Threshold Voltage

Static Drain-Source On-Resistance (Note 7)

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

R

DS(on)

|Y
V

GS(th

fs

SD

0.45 - 0.95 V
460

- -

560
730

40 - - mS

|

- 0.7 1.2 V

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 200mA

mΩ

GS

= 2.5V, ID = 100mA

V

GS

= 1.8V, ID = 75mA

V

GS

VDS = 3V, ID = 10mA

VGS = 0V, IS = 300mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.

C
C

t

t

C

oss
rss

R

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

- 64.3 -

- 6.1 -

- 4.5 -

- 70 -

- 1.6 -

- 0.2 -

- 0.2 -

- 3.5 -

- 2.8 -

- 38 -

- 13 -

pF
pF
pF
Ω
nC
nC
nC

= 25V, VGS = 0V,

V

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 15V,

GS

= 1A

I

D

ns
ns
ns

= 10V, I

V

DS

= 10V, RG = 6Ω

V

GS

D

ns

= 1A

DMN3730U

Datasheet number: DS35308 Rev. 2 - 2

3 of 7

www.diodes.com

July 2011

© Diodes Incorporated