Diodes DMN3404L User Manual

Y

DMN3404L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

max

I

D

V

R

(BR)DSS

28m @ V

30V

42m @ VGS = 4.5V

82m @ VGS = 3V

DS(ON)

max

= 10V

GS

TA = +25°C

5.8A

4.8A

2.0A

Description

This MOSFET has been designed to minimize the on-state resistance

(R

ideal for high efficiency power management applications.

) and yet maintain superior switching performance, making it

DS(ON)

Applications

 Battery Charging

 Power Management Functions

 DC-DC Converters

 Portable Power Adaptors

Top View

Gate

Internal Schematic

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

Drain

D

G

Source

Top View

S

e3

Ordering Information (Note 4 & 5)

Part Number Compliance Case Packaging

DMN3404L-7 Standard SOT23 3000/Tape & Reel

DMN3404LQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to Diodes website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

34N

Chengdu A/T Site

YM

DMN3404L

Document number: DS31787 Rev. 8 - 2

34N

Shanghai A/T Site

YM

www.diodes.com

34N = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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August 2013

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage (Note 6 & 7)

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 7) VGS = 10V

Continuous Drain Current (Note 7) VGS = 4.5V

Continuous Drain Current (Note 7) VGS = 3V

Pulsed Drain Current

Thermal Characteristics

Steady

State

Steady

State

Steady

State

Steady

State

T

= -40°C

A

= +25°C

T

A

= +85°C

T

A

T

= -40°C

A

= +25°C

T

A

= +85°C

T

A

T

= -40°C

A

= +25°C

T

A

= +85°C

T

A

T

= -40°C

A

= +25°C

T

A

= +85°C

T

A

DMN3404L

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

30 V

±20 V

4.6

4.2

A

3.0

6.2

5.8

A

4.0

5.2

4.8

A

3.2

2.2

2.0

A

1.0

30 A

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient @TA = +25°C R

Power Dissipation (Note 7)

Thermal Resistance, Junction to Ambient @TA = +25°C R

Operating and Storage Temperature Range

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

P

P

T

J, TSTG

JA

JA

D

D

0.72 W

173 °C/W

1.4 W

90 °C/W

-55 to +150 °C

DMN3404L

Document number: DS31787 Rev. 8 - 2

2 of 8

www.diodes.com

August 2013

© Diodes Incorporated

R

C

URR

T

R

CUR

R

T

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

ON CHARACTERISTICS (Note 8 )

Gate Threshold Voltage

Static Drain-Source On-Resistance TJ = -40°C (Note 9) R

Static Drain-Source On-Resistance TJ = +25°C R

Static Drain-Source On-Resistance TJ = +85°C (Note 9) R

Forward Transfer Admittance

Diode Forward Voltage

V

GS(th)

DS(ON)

DS(ON)

DS(ON)

|Y

V

fs

SD

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS = 3V) Qg

Total Gate Charge (VGS = 4.5V) Qg

Total Gate Charge (VGS = 10V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design and 25°C data. Not subject to production testing

10. Guaranteed by design. Not subject to production testing.

(A)

EN

20.0

18.0

16.0

14.0

12.0

V = 8.0V

GS

V = 4.5V

GS

V = 4.0V

GS

V = 3.0V

GS

Q

Q

t

D(on)

t

D(off)

gs

gd

t

r

t

f

10.0

DMN3404L

30 — — V

— — 1.0 A

— — ±100 nA

1.0 1.5 2.0 V

— 23 27 —

— 57 74 —

— 24 28

— 33 42

— 63 82

— 71 95 m

— 10 — S

|

— 0.75 1.0 V

— 498 — pF

— 52 — pF

— 45 — pF

— 1.75 2.8 

— 3.8 5.3 nC

— 5.3 7.5 nC

— 11.3 16 nC

— 1.4 — nC

— 2.1 — nC

— 3.41 10 ns

— 6.18 13 ns

— 13.92 28 ns

— 2.84 10 ns

20

V = 5V

DS

15

(A)

EN

10

VGS = 0V, ID = 250A

VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250A

V

= 4.5V, ID = 4.8A

GS

V

=3V, ID =2A

GS

V

= 10V, ID = 5.8A

GS

m

V

= 4.5V, ID = 4.8A

GS

V

=3V, ID =2A

GS

VGS=3V, ID =2A

VDS = 5V, ID = 5.8A

VGS = 0V, IS = 1A

= 15V, VGS = 0V, f = 1.0MHz

V

DS

VDS = 0V, VGS = 0V, f = 1MHz

VGS = 3V, VDS = 15V, ID = 1A

= 10V/4.5V, VDS = 15V,

V

GS

= 5.8A

I

D

= 15V, VGS = 10V,

V

DD

= 2.6, RG = 3

R

L

8.0

AIN

6.0

D

I, D

4.0

2.0

0.0

DMN3404L

Document number: DS31787 Rev. 8 - 2

V = 3.5V

GS

V = 2.5V

GS

V = 2.0V

GS

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

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AIN

D

I, D

5

0

0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE (V)

GS

T = 85°C

T = 125°C

A

T = 150°C

A

A

T = 25°C

A

T = -40°C

A

T = -55°C

A

Figure 2 Typical Transfer Characteristics

August 2013

© Diodes Incorporated