Y
DMN3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
max
I
D
V
R
(BR)DSS
28m @ V
30V
42m @ VGS = 4.5V
82m @ VGS = 3V
DS(ON)
max
= 10V
GS
TA = +25°C
5.8A
4.8A
2.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
ideal for high efficiency power management applications.
) and yet maintain superior switching performance, making it
DS(ON)
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
Top View
Gate
Internal Schematic
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (approximate)
Drain
D
G
Source
Top View
S
e3
Ordering Information (Note 4 & 5)
Part Number Compliance Case Packaging
DMN3404L-7 Standard SOT23 3000/Tape & Reel
DMN3404LQ-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to Diodes website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2009 2010 2011 2012 2013 2014 2015
Code W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
34N
Chengdu A/T Site
YM
DMN3404L
Document number: DS31787 Rev. 8 - 2
34N
Shanghai A/T Site
YM
www.diodes.com
34N = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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© Diodes Incorporated
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage (Note 6 & 7)
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 7) VGS = 10V
Continuous Drain Current (Note 7) VGS = 4.5V
Continuous Drain Current (Note 7) VGS = 3V
Pulsed Drain Current
Thermal Characteristics
Steady
State
Steady
State
Steady
State
Steady
State
T
= -40°C
A
= +25°C
T
A
= +85°C
T
A
T
= -40°C
A
= +25°C
T
A
= +85°C
T
A
T
= -40°C
A
= +25°C
T
A
= +85°C
T
A
T
= -40°C
A
= +25°C
T
A
= +85°C
T
A
DMN3404L
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
30 V
±20 V
4.6
4.2
A
3.0
6.2
5.8
A
4.0
5.2
4.8
A
3.2
2.2
2.0
A
1.0
30 A
Characteristic Symbol Value Unit
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C R
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C R
Operating and Storage Temperature Range
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
P
P
T
J, TSTG
JA
JA
D
D
0.72 W
173 °C/W
1.4 W
90 °C/W
-55 to +150 °C
DMN3404L
Document number: DS31787 Rev. 8 - 2
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August 2013
© Diodes Incorporated
R
C
URR
T
R
CUR
R
T
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
ON CHARACTERISTICS (Note 8 )
Gate Threshold Voltage
Static Drain-Source On-Resistance TJ = -40°C (Note 9) R
Static Drain-Source On-Resistance TJ = +25°C R
Static Drain-Source On-Resistance TJ = +85°C (Note 9) R
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
DS(ON)
DS(ON)
DS(ON)
|Y
V
fs
SD
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
g
Total Gate Charge (VGS = 3V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design and 25°C data. Not subject to production testing
10. Guaranteed by design. Not subject to production testing.
(A)
EN
20.0
18.0
16.0
14.0
12.0
V = 8.0V
GS
V = 4.5V
GS
V = 4.0V
GS
V = 3.0V
GS
Q
Q
t
D(on)
t
D(off)
gs
gd
t
r
t
f
10.0
DMN3404L
30 — — V
— — 1.0 A
— — ±100 nA
1.0 1.5 2.0 V
— 23 27 —
— 57 74 —
— 24 28
— 33 42
— 63 82
— 71 95 m
— 10 — S
|
— 0.75 1.0 V
— 498 — pF
— 52 — pF
— 45 — pF
— 1.75 2.8
— 3.8 5.3 nC
— 5.3 7.5 nC
— 11.3 16 nC
— 1.4 — nC
— 2.1 — nC
— 3.41 10 ns
— 6.18 13 ns
— 13.92 28 ns
— 2.84 10 ns
20
V = 5V
DS
15
(A)
EN
10
VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250A
V
= 4.5V, ID = 4.8A
GS
V
=3V, ID =2A
GS
V
= 10V, ID = 5.8A
GS
m
V
= 4.5V, ID = 4.8A
GS
V
=3V, ID =2A
GS
VGS=3V, ID =2A
VDS = 5V, ID = 5.8A
VGS = 0V, IS = 1A
= 15V, VGS = 0V, f = 1.0MHz
V
DS
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 3V, VDS = 15V, ID = 1A
= 10V/4.5V, VDS = 15V,
V
GS
= 5.8A
I
D
= 15V, VGS = 10V,
V
DD
= 2.6, RG = 3
R
L
8.0
AIN
6.0
D
I, D
4.0
2.0
0.0
DMN3404L
Document number: DS31787 Rev. 8 - 2
V = 3.5V
GS
V = 2.5V
GS
V = 2.0V
GS
012345
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
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AIN
D
I, D
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V , GATE-SOURCE VOLTAGE (V)
GS
T = 85°C
T = 125°C
A
T = 150°C
A
A
T = 25°C
A
T = -40°C
A
T = -55°C
A
Figure 2 Typical Transfer Characteristics
August 2013
© Diodes Incorporated
R
R
OUR
CE ON-R
TANC
R
R
OUR
C
ON-R
C
OUR
C
CUR
R
T
0.05
0.08
E ( )
0.07
V = 4.5V
GS
0.04
0.06
ESIS
0.05
T = 125°C
A
T = 85°C
A
0.04
0.03
AIN-S
0.02
, D
0.03
0.02
0.01
V = 4.5V
GS
V = 8.0V
GS
T = 150°C
A
T = -55°C
A
DMN3404L
T = 25°C
A
T = -40°C
A
0.01
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE ( )
0
02468101214161820
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.8
DS(ON)
0
0 2 4 6 8 10 12 14 16 18 20
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
0.08
E ( )
1.6
1.4
V = 10V
GS
I = 10A
D
V = 4.5V
GS
I = 5.0A
D
0.07
0.06
ESISTAN
0.05
V = 4V
GS
I = 2A
D
V = 4.5V
GS
I = 5.0A
D
1.2
1
DSON
R , DRAIN-SOURCE
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 5 On-Resistance Variation with Temperature
2
E
0.04
0.03
AIN-S
0.02
, D
0.01
DSON
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 6 On-Resistance Variation with Temperature
20
V = 10V
GS
I = 10A
D
18
1.8
1.6
I = 1mA
D
1.4
I = 250µ A
D
1.2
1
GS(TH)
V , GATE THRESHOLD VOLTAGE (V)
0.8
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
Figure 7 Gate Threshold Variation vs. Ambient Temperature
DMN3404L
Document number: DS31787 Rev. 8 - 2
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16
(A)
EN
14
12
T = 25°C
A
10
E
8
6
S
I, S
4
2
0
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
August 2013
© Diodes Incorporated
C
CAPAC
N
C
GAT
OUR
C
OLT
G
RAIN CUR
REN
T
RAIN CUR
REN
T
T
RAN
N
T
T
H
R
R
T
N
C
DMN3404L
10000
1000
C
iss
E (pF)
100
ITA
C
rss
,
T
10
1
0 5 1015 202530
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
oss
Figure 9 Typical Total Capacitance
100
R
DS(on)
Limited
f = 1MHz
10
8
E (V)
A
6
V = 15V
DS
I = 5.8A
D
E V
4
E-S
2
GS
V,
0
0 2 4 6 8 10 12
Q , TOTAL GATE CHARGE (nC)
g
Figure 10 Gate-Charge Characteristics
100
R
DS(on)
Limited
P = 100µs
W
10
(A)
DC
1
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
D
I, D
0.01
0.1
T = 150°C
J(max)
T = 25°C
A
Single Pulse
W
P = 1ms
W
P = 100µs
W
P = 10sWµ
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 Safe Operation Area
10
(A)
1
DC
P = 10s
W
0.1
D
I, D
0.01
0.001
P = 1s
W
T = 150°C
J(max)
T = +25°C
A
Single Pulse
Minimum
Recommended
Pad
P = 100ms
W
P = 10ms
W
P = 1ms
W
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 12 Safe Operation Area
1
E
A
D = 0.7
D = 0.5
D = 0.3
ESIS
0.1
MAL
E
SIE
r(t),
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
R (t) = r(t) *
JA
R = 163°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA
Duty Cycle, D = t /t
R
JA
12
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t , PULSE DURATION TIME (s)
1
Figure 13 Transient Thermal Response
DMN3404L
Document number: DS31787 Rev. 8 - 2
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© Diodes Incorporated
DMN3404L
Gate Charge Test Circuit and Waveform
Switching Test Circuit and Waveform
DMN3404L
Document number: DS31787 Rev. 8 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
H
K
K
1
A
C
B
D
F
G
J
M
All 7
°
GAUGE PLANE
0.2
5
a
L
L
1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
X
E
C
Dimensions Value (in mm)
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
All Dimensions in mm
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
DMN3404L
SOT23
8°
DMN3404L
Document number: DS31787 Rev. 8 - 2
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© Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
DMN3404L
DMN3404L
Document number: DS31787 Rev. 8 - 2
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