Diodes DMN3300U User Manual

Product Summary

V

(BR)DSS

30V

R

0.15Ω @ V

0.2Ω @ VGS = 2.5V

0.25Ω @ VGS = 1.8V

0.3Ω @ VGS = 1.5V

DS(ON)

GS

= 4.5V

Package

SOT23

Description

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

Applications

• DC-DC Converters

• Power Management Functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

) and yet maintain superior switching

DS(on)

SOT23

Top View

I

D

TA = +25°C

2A

1.6A

1.4A

1.2A

DMN3300U

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

D

GS

Internal Schematic

Ordering Information (Note 4)

Part Number Case Packaging

DMN3300U-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN3300U

Document number: DS31181 Rev. 5 - 2

33N

www.diodes.com

33N = Marking Code
YM = Date Code Marking

YM

Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

1 of 5

September 2012

© Diodes Incorporated

θ

)

)

r

)

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 4.5V

Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current (Note 6)

NEW PRODUCT

Thermal Characteristics

Total Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Characteristic Symbol Value Units

Steady

State

Steady

State

V

DSS

V

GSS

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

(Note 5)
(Note 6) 1.3
(Note 5)
(Note 6) 102
(Note 6)

P

R
R

T

J, TSTG

I

D

I

D

I

DM

I

S

D

JA

θ

JC

0.7

176

45

-55 to +150 °C

DMN3300U

30 V

±12 V

1.5

1.2

2.0

1.6
8 A

1.6 A

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

DSS

30 37

⎯ ⎯
⎯ ⎯

±10 μA

⎯

1

V

VGS = 0V, ID = 100μA

μA

VDS = 30V, VGS = 0V
V

= ±12V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

| ⎯

fs

⎯

SD

0.5

⎯

100
140

⎯

185
240

5

0.8 1.1 V

1 V

150
200

mΩ

250
300

S

⎯

VDS = VGS, ID = 250μA
V

= 4.5V, ID = 4.5A

GS

VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 1.5A
VGS = 1.5V, ID = 0.5A
VDS =5V, ID = 2.4A
VGS = 0V, I = 0.5A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

C

⎯

iss

C

⎯

oss

C

⎯

rss

t

⎯

d(on

t

⎯

t

⎯

d(off

t

⎯

f

193

35
23

7
24
24
12

⎯
⎯
⎯
⎯
⎯
⎯
⎯

pF
pF
pF

ns

V

= 10V, VGS = 0V

DS

f = 1.0MHz

= 10V, RL = 10Ω

V

DD

= 1A, V

I

D

GEN

= 4.5V, RG = 6Ω

DMN3300U

Document number: DS31181 Rev. 5 - 2

2 of 5

www.diodes.com

September 2012

© Diodes Incorporated