Diodes DMN32D2LV User Manual
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD PROTECTED
SOT-563
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DMN32D2LV
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
D
2
S
2
Schematic and Transistor Diagram
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S
G
1
1
D
G
1
2
Ordering Information (Note 4)
Part Number Case Packaging
DMN32D2LV-7 SOT-563 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
Marking Information
D
2
DV YM
S
G
2
1
1
DV = Product Type Marking Code (See Note 6)
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
D
2
1
S
G
Date Code Key
Year 2007 2008 2009 2010 2011 2012
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN32D2LV
Document number: DS31121 Rev. 7 - 2
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
)
DMN32D2LV
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
V
DSS
V
GSS
I
D
P
D
R
θJA
T
, T
J
STG
30 V
10
V
400 mA
400 mW
313
-55 to +150
C/W
C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TJ= +25°C I
Gate-Body Leakage @ TJ = +25°C I
Gate-Body Leakage (Note 7) @ TJ = +105°C
@ T
= +125°C
J
BV
I
DSS
DSS
GSS
GSS
30
1
8
15
500
100
100
100
1
10
V
V
= 0V, ID = 250μA
A
A
nA
nA
nA
nA
GS
V
= 30V, VGS = 0V
DS
VGS = ±10V, VDS = 0V
V
= ±5V, VDS = 0V
GS
= ±2.5V, VDS = 0V
V
GS
VGS = ±2.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.6
100
|
0.5
1.2 V
2.2
1.5
1.2
1.4 V
VDS = VGS, ID = 250μA
V
Ω
V
V
mS
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
= 1.8V, ID = 20mA
GS
= 2.5V, ID = 20mA
GS
= 4.0V, ID = 100mA
GS
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Turn-on Time
C
iss
C
oss
C
rss
t
on
t
off
39
10
3.6
11
51
pF
pF
pF
nS
nS
= 3V, VGS = 0V
V
DS
f = 1.0MHz
V
= 5V, ID = 10 mA,
DD
V
= 5V Turn-off Time
GS
DMN32D2LV
Document number: DS31121 Rev. 7 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
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