Diodes DMN32D2LFB4 User Manual
A
D
Product Summary
max
I
V
R
(BR)DSS
1.2 @ V
30V
1.5 @ VGS = 2.5V
2.2 @ VGS = 1.8V
DS(on)
max
GS
= 4V
D
T
= +25C
415mA
370mA
300mA
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
ESD PROTECTE
X2-DFN1006-3
Bottom View
DMN32D2LFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
Body
Gate
Gate
Protection
Diode
Equivalent Circuit
Diode
Source
e4
S
D
G
Top View
Pin-Out
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN32D2LFB4-7 DV 7 8 3000
DMN32D2LFB4-7B DV 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a t http://www .diodes.com/products/packages.html
Marking Information
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
DMN32D2LFB4-7 DMN32D2LFB4-7B
DV
Top View
Dot Denotes
Drain Side
DV
Top View
Bar Denotes Gate
and Source Side
1 of 5
www.diodes.com
DV = Product Type Marking Code
June 2013
© Diodes Incorporated
)
DMN32D2LFB4
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
V
DSS
V
GSS
I
D
30 V
10
V
300 mA
Thermal Characteristics (@T
Total Power Dissipation (Note 5) @TA = 25°C PD
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
R
T
, T
J
350 mW
Θ
JA
STG
357
-55 to +150
C/W
C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C I
Gate-Body Leakage
BV
I
DSS
DSS
GSS
30
1
10
500
V
A
A
nA
V
= 0V, ID = 10A
GS
V
= 30V, VGS = 0V
DS
= ±10V, VDS = 0V
V
GS
= ±5V, VDS = 0V
V
GS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
0.6
100
|
0.5
1.2 V
2.2
1.5
1.2
1.4 V
VDS = VGS, ID = 250A
V
V
V
mS
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
= 1.8V, ID = 20mA
GS
= 2.5V, ID = 20mA
GS
= 4.0V, ID = 100mA
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes: 5. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
Turn-on Time
C
iss
C
oss
C
rss
t
on
t
off
39 78 pF
10 20 pF
3.6 7.2 pF
11 22 nS
51 102 nS
V
f = 1.0MHz
V
V
= 3V, VGS = 0V
DS
= 5V, ID = 10mA,
DD
= 0-5V Turn-off Time
GS
DMN32D2LFB4
Document number: DS31124 Rev. 7 - 2
2 of 5
www.diodes.com
June 2013
© Diodes Incorporated
Loading...