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Features
• Common Source Dual N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.2V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Small Surface Mount Package
• ESD Protected Gate
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q 101 Standards for High Reliability
NEW PRODUCT
Maximum Ratings Q1, Q2 @T
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
ESD PROTECTED
Characteristic Symbol Value Unit
TOP VIEW
= 25°C unless otherwise specified
A
BOTTOM VIEW
DMN32D2LDF
COMMON SOURCE DUAL N-CHANNEL
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOT-353
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
G
S
1
Q
D
1
SOT-353
G2SG
D
2
TOP VIEW
V
DSS
V
GSS
I
D
G
1
D
1
2
Q
1
D
2
Schematic Diagram
30 V
±10
400 mA
2
V
Thermal Characteristics Q1, Q
@T
2
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics Q1, Q2 @T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
= 25°C unless otherwise specified
A
T
= 25°C unless otherwise specified
A
BV
DSS
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
|
fs
V
SD
C
iss
C
oss
C
rss
Turn-on Time
Turn-off Time
t
on
t
off
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P
D
R
JA
θ
, T
j
STG
30
⎯ ⎯
⎯ ⎯
0.6
⎯
⎯
⎯
100
0.5
⎯
⎯
⎯
⎯
⎯
-55 to +150
⎯ ⎯
±10
⎯
⎯
⎯
⎯
1.2 V
2.2
1.5
1.2
⎯ ⎯
⎯
1.4 V
39
10
3.6
11
51
280 mW
446
°C/W
°C
V
V
= 0V, ID = 250μA
GS
1
±1
⎯
⎯
⎯
⎯
⎯
μA
V
DS
V
μA
mS
pF
pF
pF
nS
nS
GS
V
GS
V
DS
V
GS
Ω
V
GS
V
GS
VDS =10V, ID = 0.1A
V
GS
V
DS
f = 1.0MHz
V
DD
V
GS
= 30V, VGS = 0V
= ±10V, VDS = 0V
= ±5V, VDS = 0V
= VGS, ID = 250μA
= 1.8V, ID = 20mA
= 2.5V, ID = 20mA
= 4.0V, ID = 100mA
= 0V, IS = 115mA
= 3V, VGS = 0V
= 5V, ID = 10 mA,
= 0-5V
January 2008
© Diodes Incorporated
Page 2
NEW PRODUCT
DMN32D2LDF
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
2 of 4
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January 2008
© Diodes Incorporated
Page 3
C, CAPACITANC
F
1.8
1.6
1.4
1.2
1
DS(ON)
0.8
R , STATIC DRAIN-SOURCE
ON-RESISTA NCE (NORMA LIZED)
0.6
NEW PRODUCT
-75 -50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (C°)
Fig. 7 Nor m al ized St atic Drain- Source On - Re s i stance
V = 4V
I = 100mA
D
A
vs. Ambien t T empe rature
DMN32D2LDF
GS
V = 2.5V
GS
I = 20mA
D
V = 1.8V
GS
I = 20mA
D
50
f = 1 MHz
40
)
E (p
30
C
iss
20
T
10
0
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Capacitance
C
oss
C
rss
Ordering Information (Note 5)
Part Number Case Packaging
DMN32D2LDF-7 SOT-353 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information (Note 6)
Notes: 6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year 2007 2008 2009 2010 2011 2012
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
G
2
KDV
D
2
S
G
1
KDV = Product Type Marking Code (See Note 6)
YM = Date Code Marking
YM
Y = Year ex: U = 2007
M = Month ex: 9 = September
D
1
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January 2008
© Diodes Incorporated
Page 4
DMN32D2LDF
Package Outline Dimensions
NEW PRODUCT
K
J
A
TOP VIEW
H
D
SOT-353
B C
M
L
F
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
⎯
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
All Dimensions in mm
0.10
0° 8°
Suggested Pad Layout
G
Z
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Y
X
EE
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
C
IMPORTANT NOTICE
LIFE SUPPORT
Y 0.6
C 1.9
E 0.65
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
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January 2008
© Diodes Incorporated
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