Diodes DMN32D2LDF User Manual
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Features
• Common Source Dual N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.2V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Small Surface Mount Package
• ESD Protected Gate
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q 101 Standards for High Reliability
NEW PRODUCT
Maximum Ratings Q1, Q2 @T
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
ESD PROTECTED
Characteristic Symbol Value Unit
TOP VIEW
= 25°C unless otherwise specified
A
BOTTOM VIEW
DMN32D2LDF
COMMON SOURCE DUAL N-CHANNEL
ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
• Case: SOT-353
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
G
S
1
Q
D
1
SOT-353
G2SG
D
2
TOP VIEW
V
DSS
V
GSS
I
D
G
1
D
1
2
Q
1
D
2
Schematic Diagram
30 V
±10
400 mA
2
V
Thermal Characteristics Q1, Q
@T
2
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics Q1, Q2 @T
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C I
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Time
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
= 25°C unless otherwise specified
A
T
= 25°C unless otherwise specified
A
BV
DSS
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
|
fs
V
SD
C
iss
C
oss
C
rss
Turn-on Time
Turn-off Time
t
on
t
off
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P
D
R
JA
θ
, T
j
STG
30
⎯ ⎯
⎯ ⎯
0.6
⎯
⎯
⎯
100
0.5
⎯
⎯
⎯
⎯
⎯
-55 to +150
⎯ ⎯
±10
⎯
⎯
⎯
⎯
1.2 V
2.2
1.5
1.2
⎯ ⎯
⎯
1.4 V
39
10
3.6
11
51
280 mW
446
°C/W
°C
V
V
= 0V, ID = 250μA
GS
1
±1
⎯
⎯
⎯
⎯
⎯
μA
V
DS
V
μA
mS
pF
pF
pF
nS
nS
GS
V
GS
V
DS
V
GS
Ω
V
GS
V
GS
VDS =10V, ID = 0.1A
V
GS
V
DS
f = 1.0MHz
V
DD
V
GS
= 30V, VGS = 0V
= ±10V, VDS = 0V
= ±5V, VDS = 0V
= VGS, ID = 250μA
= 1.8V, ID = 20mA
= 2.5V, ID = 20mA
= 4.0V, ID = 100mA
= 0V, IS = 115mA
= 3V, VGS = 0V
= 5V, ID = 10 mA,
= 0-5V
January 2008
© Diodes Incorporated
NEW PRODUCT
DMN32D2LDF
DMN32D2LDF
Document number: DS31238 Rev. 3 - 2
2 of 4
www.diodes.com
January 2008
© Diodes Incorporated
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