Features
Low On-Resistance
90 m @ V
110 m @ V
200 m @ V
Very Low Gate Threshold Voltage
Low Input Capacitance
ESD Protected Gate
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ESD PROTECTED TO 3kV
= 4.5V
GS
GS
GS
= 2.5V
= 1.5V
DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Gate
Protection
Diode
E
uivalent Circuit
Drain
Source
G
D
S
TOP VIEW
SOT-23
Gate
TOP VIEW
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMN3200U-7 SOT-23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
32N
Chengdu A/T Site
YM
32N
Shanghai A/T Site
DMN3200U
Document number: DS31188 Rev. 5 - 2
32N = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
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© Diodes Incorporated
Maximum Ratings (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 5)
Thermal Characteristics (@T
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
NEW PRODUCT
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
A
TJ, T
DMN3200U
V
DSS
V
GSS
I
D
I
DM
PD
R
θJA
STG
30 V
±8 V
2.2 A
9 A
650 mW
192 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.45
62
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
R
DS (ON)
|Y
V
|
fs
SD
70
150
5
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN3200U
Document number: DS31188 Rev. 5 - 2
C
iss
C
oss
C
rss
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290
66
35
V
1 µA
5
µA
1.0 V
90
110
m
200
S
0.9 V
pF
pF
pF
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 8V, VDS = 0V
VDS = VGS, ID = 250µA
V
= 4.5V, ID = 2.2A
GS
VGS = 2.5V, ID = 2A
VGS = 1.5V, ID = 0.67A
VDS =5V, ID = 2.2A
VGS = 0V, IS = 1A
= 10V, VGS = 0V
V
DS
f = 1.0MHz
© Diodes Incorporated
October 2013