Diodes DMN3200U User Manual

q

M

Features

 Low On-Resistance

 90 m @ V

 110 m @ V

 200 m @ V

 Very Low Gate Threshold Voltage

 Low Input Capacitance

 ESD Protected Gate

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 3kV

= 4.5V

GS

GS

GS

= 2.5V

= 1.5V

DMN3200U

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

 Case: SOT-23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish  Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Gate

Protection

Diode

E

uivalent Circuit

Drain

Source

G

D

S

TOP VIEW

SOT-23

Gate

TOP VIEW

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMN3200U-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

32N

Chengdu A/T Site

YM

32N

Shanghai A/T Site

DMN3200U

Document number: DS31188 Rev. 5 - 2

32N = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y

YM

Y or = Year (ex: A = 2013)

Y

M = Month (ex: 9 = September)

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Maximum Ratings (@T

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 5)

Pulsed Drain Current (Note 5)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

= +25°C, unless otherwise specified.)

A

= +25°C, unless otherwise specified.)

A

TJ, T

DMN3200U

V

DSS

V

GSS

I

D

I

DM

PD

R

θJA

STG

30 V

±8 V

2.2 A

9 A

650 mW

192 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30

 

 

 

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

V

GS(th)

0.45



62

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage (Note 6)

R

DS (ON)

|Y

V

| 

fs

SD



 

70

150

5

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

DMN3200U

Document number: DS31188 Rev. 5 - 2

C



iss

C



oss

C

rss

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

290

66

35

V

1 µA

5

µA

1.0 V

90

110

m

200



S

0.9 V







pF

pF

pF

VGS = 0V, ID = 250µA

VDS = 30V, VGS = 0V

VGS = 8V, VDS = 0V

VDS = VGS, ID = 250µA

V

= 4.5V, ID = 2.2A

GS

VGS = 2.5V, ID = 2A

VGS = 1.5V, ID = 0.67A

VDS =5V, ID = 2.2A

VGS = 0V, IS = 1A

= 10V, VGS = 0V

V

DS

f = 1.0MHz

© Diodes Incorporated

October 2013

RAIN C

URREN

T

C

CAPAC

TANC

F

NEW PRODUCT

10

9

8

7

6

5

4

3

2

1

0

10

V = 5V

DS

Pulsed

9

8

(A)

7

6

5

4

3

D

I, D

2

1

0

0.511.522.53

T = 150°C

A

T = 85°C

A

V , GATE SOURCE VOLTAGE (V)

GS

T = 25°C

A

T = -55°C

A

DMN3200U

Fig. 2 Typical Transfer Characteristics

1

1.8

1.6



V = 1.5V

GS

V = 2.5V

0.1

GS

V = 4.5V

GS

ON-RESISTANCE ( )

DS(ON)

R , STATIC DRAIN-SOURCE

0.01

0.01 0.1 1 10
I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

1.4

1.2

1.0

0.8

0.6

1.0

I = 250µA

0.8

0.6

D

)

C

iss

E (p

I

0.4

C

,

0.2

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

DMN3200U

Document number: DS31188 Rev. 5 - 2

Fig. 5 Gate Threshold Variation vs. Ambient Temperature

A

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0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 6 Typical Total Capacitance

oss

C

rss

October 2013

© Diodes Incorporated

OUR

CE CUR

R

T

10

1

(A)

EN

0.01

S

I, S

0.001

0.1

T = 125°C

A

T = 85°C

A

T = 150°C

A

T = 25°C

A

T = -55°C

A

0.0001

NEW PRODUCT

Fig. 7 Reverse Drain Current vs. Source-Drain Voltage

0.2 0.4 0.6 0.8 1.0 1.20
V , SOURCE-DRAIN VOLTAGE (V)

SD

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

TOP VIEW

C

B

K

G

H

M

J

D

L

F

Suggested Pad Layout

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Y

Z

G

C

X E

SOT23

Dim Min Max

A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03

F 0.45 0.60
G 1.78 2.05
H 2.80 3.00

J 0.013 0.10
K 0.903 1.10

L 0.45 0.61
M 0.085 0.180



0° 8°

All Dimensions in mm

Dimensions Value (in mm)

Z 3.4

G 0.7

X 0.9
Y 1.4
C 2.0
E 0.9

DMN3200U

DMN3200U

Document number: DS31188 Rev. 5 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

NEW PRODUCT

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN3200U

DMN3200U

Document number: DS31188 Rev. 5 - 2

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