Diodes DMN31D5UFZ User Manual

Product Summary

V

R

(BR)DSS

1.5Ω @ V

30V

2.0Ω @ VGS = 2.5V

3.0Ω @ VGS = 1.8V

4.5Ω @ VGS = 1.5V

DS(ON)

max

= 4.5V

GS

Description

This MOSFET has been designed to minimize the on-state resistance

NEW PRODUCT

(R

ideal for high efficiency power management applications.

) and yet maintain superior switching performance, making it

DS(ON)

Applications

• General Purpose Interfacing Switch

• Power Management Functions

NEW PRODUCT

• Analog Switch

ADVANCED INFORMATION

ESD PROTECTED

Bottom View

Ordering Information (Note 4)

I

max

D

TA = +25°C

0.22A

DMN31D5UFZ

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low Package Profile, 0.42mm Maximum Package Height

• 0.62mm x 0.62mm Package Footprint

• Low On-Resistance

• Very Low Gate Threshold Voltage, 1.0V max

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: X2-DFN0606-3

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe

Solderable per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Equivalent Circuit

Package Pin Configuration

e4

Top View

Part Number Case Packaging

DMN31D5UFZ-7B X2-DFN0606-3 10K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN31D5UFZ

Document number: DS36843 Rev. 2 - 2

Top View

Bar Denotes Gate

and Source Side

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R6 = Product Type Marking Code

1 of 6

June 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5)

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5) Steady state

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

NEW PRODUCT

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

ADVANCED INFORMATION

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @TC = +25°C I

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

DMN31D5UFZ

Document number: DS36843 Rev. 2 - 2

T

Steady

State

= +25°C, unless otherwise specified.)

A

= +25°C

A

= +85°C

T

A

Steady state

= +25°C, unless otherwise specified.)

A

BV

I

V

DSS

DSS

GSS

GS(th)

30

— —

— —

0.4 — 1.0 V

— —

— —

R

DS(ON)

— —

— —

— 2.8

V

C

C

C

Q

Q

Q

t

D(on)

t

D(off)

SD

iss

oss

rss

gd

t

t

g

gs

r

f

— 0.75 1.0 V

— 22.2 — pF

—

—

—

—

—

—

—

—

—

2 of 6

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—

2.9

2.2

0.35

0.05

0.02

3.1

2.0

20

6.9

V

DSS

V

GSS

I

D

I

DM

P

D

R

θJA

T

J, TSTG

— V

100 nA

±10 μA

1.5

2.0

3.0

Ω

4.5

—

—

—

—

—

—

—

—

—

—

pF

pF

nC

nC

nC

ns

ns

ns

ns

DMN31D5UFZ

30 V

±12 V

220
150

500 mA

393 mW

318 °C/W

-55 to +150 °C

VGS = 0V, ID = 250μA

VDS = 24V, VGS = 0V

VGS = ±10V, VDS = 0V

VDS = VGS, ID = 250μA

= 4.5V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

GS

V

= 1.8V, ID = 20mA

GS

V

= 1.5V, ID = 10mA

GS

V

= 1.2V, ID = 1mA

GS

VGS = 0V, IS = 10mA

V

= 15V, VGS = 0V,

DS

f = 1.0MHz

V

= 4.5V, VDS = 15V,

GS

= 200mA

I

D

= 10V, VGS = 4.5V,

V

DD

= 6Ω, ID = 200mA

R

G

mA

June 2014

© Diodes Incorporated