Diodes DMN3190LDW User Manual
NEW PRODUCT
Product Summary
Package
SOT363
TA = +25°C
V
(BR)DSS
30V
R
DS(ON) (MAX)
190m @ V
GS
335m @ VGS = 4.5V
= 10V
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(ON)
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Load Switch
ADVANCE INFORMATION
ESD PROTECTED
I
D (MAX)
1A
0.75A
DMN3190LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
D
1
Q
1
S
1
Top View
Internal Schematic
G
2
G
1
Top View
S
2
Q
2
D
2
e3
Ordering Information (Note 4)
Part Number Case Packaging
DMN3190LDW-7 SOT363 3000K/Tape & Reel
DMN3190LDW-13 SOT363 10000K/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
V
V
)
g
g
g
)
r
)
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle=1%)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
ADVANCE INFORMATION
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady
State
T < 5s
V
DSS
V
GSS
T
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
= +25°C
T
A
TA = +70°C
Steady State
T < 5s 320
= +25°C
T
A
TA = +70°C
Steady State
T < 5s 250
I
D
I
D
I
S
I
DM
R
R
R
T
J, TSTG
P
P
JA
JA
JC
D
D
DMN3190LDW
alue Units
30 V
±20 V
1000
900
1300
1000
0.5 A
2.0 A
alue Units
0.32
0.19
395
0.4
0.25
320
143
-55 to +150 °C
mA
mA
W
°C/W
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage
BV
I
DSS
DSS
GSS
30 — — V
— — 1 A
— — ±10 A
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
R
DS(ON)
|Y
V
GS(th
fs
SD
1.5 — 2.8 V
— 122 190
— 181 335
— 0.7 — mS
|
— — 1.2 V
VDS = VGS, ID = 250A
V
= 10V, ID = 1.3A
m
GS
V
= 4.5V, ID = 290mA
GS
VDS = 10V, ID = 250mA
VGS = 0V, IS = 250mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Q
Q
t
D(on
t
D(off
t
t
f
— 87 — pF
— 17 — pF
— 12 — pF
— 69.8 —
— 0.9 — nC
— 2.0 — nC
— 0.3 — nC
s
— 0.3 — nC
d
— 4.5 — ns
— 8.9 — ns
— 30.3 — ns
— 15.6 — ns
= 20V, VGS = 0V,
V
DS
f = 1.0MHz
f = 1MHz , V
V
DS
GS
= 10V, ID = 250mA
V
= 30V, VGS = 10V,
DD
R
= 10, ID = 100mA
G
= 0V, V
DS
= 0V
DMN3190LDW
Document number: DS36192 Rev. 4 - 2
2 of 5
www.diodes.com
September 2013
© Diodes Incorporated
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