Diodes DMN3190LDW User Manual

NEW PRODUCT

Product Summary

Package

SOT363

TA = +25°C

V

(BR)DSS

30V

R

DS(ON) (MAX)

190m @ V

GS

335m @ VGS = 4.5V

= 10V

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Motor Control

 Power Management Functions

 Load Switch

ADVANCE INFORMATION

ESD PROTECTED

I

D (MAX)

1A

0.75A

DMN3190LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Alloy42 leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

D

1

Q

1

S

1

Top View

Internal Schematic

G

2

G

1

Top View

S

2

Q

2

D

2

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMN3190LDW-7 SOT363 3000K/Tape & Reel

DMN3190LDW-13 SOT363 10000K/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

N31 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN3190LDW

Document number: DS36192 Rev. 4 - 2

1 of 5

www.diodes.com

September 2013

© Diodes Incorporated

V

V

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 5)

Pulsed Drain Current (10µs pulse, duty cycle=1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Steady

State

T < 5s

V

DSS

V

GSS

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

TA = +70°C

Steady State

T < 5s 320

= +25°C

T

A

TA = +70°C

Steady State

T < 5s 250

I

D

I

D

I

S

I

DM

R

R

R

T

J, TSTG

P

P

JA

JA

JC

D

D

DMN3190LDW

alue Units

30 V

±20 V

1000

900

1300
1000

0.5 A

2.0 A

alue Units

0.32

0.19
395

0.4

0.25
320

143

-55 to +150 °C

mA

mA

W

°C/W

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

30 — — V
— — 1 A
— — ±10 A

VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

R

DS(ON)

|Y
V

GS(th

fs

SD

1.5 — 2.8 V
— 122 190
— 181 335
— 0.7 — mS

|

— — 1.2 V

VDS = VGS, ID = 250A
V

= 10V, ID = 1.3A

m

GS

V

= 4.5V, ID = 290mA

GS

VDS = 10V, ID = 250mA

VGS = 0V, IS = 250mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q
Q

t

D(on

t

D(off

t

t

f

— 87 — pF
— 17 — pF
— 12 — pF
— 69.8 — 
— 0.9 — nC
— 2.0 — nC
— 0.3 — nC

s

— 0.3 — nC

d

— 4.5 — ns
— 8.9 — ns
— 30.3 — ns
— 15.6 — ns

= 20V, VGS = 0V,

V

DS

f = 1.0MHz

f = 1MHz , V

V

DS

GS

= 10V, ID = 250mA

V

= 30V, VGS = 10V,

DD

R

= 10, ID = 100mA

G

= 0V, V

DS

= 0V

DMN3190LDW

Document number: DS36192 Rev. 4 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

R

CUR

RENT

R

CUR

R

O

O

R

R

OUR

ON-R

R

R

OUR

C

R

R

O

U

R

CE O

R

T

C

NEW PRODUCT

DMN3190LDW

2.0

V = 10VGS

1.8

V= 4.5V

1.6

1.4

(A)

1.2

GS

V= 4.0V

GS

V= 3.5V

GS

1.0

0.8

AIN

0.6

D

I, D

0.4

0.2

0.0
012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristic

V= 3.0V

GS

V= 2.5V

GS

0.3



ADVANCE INFORMATION

0.275

0.25

N-RESISTANCE ( )

0.225

0.2

0.175

V = 4.5VGS

0.15

0.125

URCE

V = 10VGS

0.1

0.075

0.05

0.025

DS(ON)

R , DRAIN-S

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resi stance vs.

Drain Current and Gate Voltage

2.5

2

V = 5.0VDS

1.6

ENT (A)

1.2

T = 150°C

A

0.8

AIN

D

I, D

0.4

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE-SOURCE VOLTAGE (V)

GS

T = 125°C

A

T = 85°C

T = 25°C

T = -55°C

Figure 2 Typical Transfer Characteristics

0.4



0.35

V = 4.5VGS

T = 150°C

A

0.3

ESISTANCE ( )

0.25

0.2

CE

0.15

AIN-S

0.1

, D

0.05

DS(ON)

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.3

A

A

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A



E ( )

2

E

V=V

10

GS

I= 0.5A

D

1.5

AN

ESIS

N-

0.2

V = 4.5V

GS

I= 5A

D

AIN-S

, D

1

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

V = 4.5V

GS

I = 250mA

D

0.1

AIN-S

, D

V=V

10

GS

I= 10A

D

DS(ON)

0

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J



Figure 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J



Figure 6 On-R esistance Variation with Temperature

DMN3190LDW

Document number: DS36192 Rev. 4 - 2

3 of 5

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September 2013

© Diodes Incorporated

GATE THRESH

O

OLTAG

OUR

CE CUR

R

N

T

C

UNC

TION CAPACITANC

GATE THRESH

O

OLTAG

NEW PRODUCT

DMN3190LDW

3

2.8

E (V)

2.6

2.4

2.2

LD V

2

1.8

I = 250µA

D

I= 1mA

D

1.6

1.4

GS(th)

1.2

V,

1

-50 -25 0 25 50 75 100 125 150

Figure 7 Gate Threshold Variation vs. Ambient Temperature

ADVANCE INFORMATION

1000

E (pF)

100

T , JUNCTION TEMPERATURE ( C)

J

f = 1MHz



C

iss

2

1.8

1.6

(A)

1.4

E

1.2

1

T= 25°C

A

0.8

0.6

S

I, S

0.4

0.2

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

10

V = 10V

DS

I= A

250m

D

8

E (V)

6

LD V

C

10

, J

T

1

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

oss

4

2

GS

V

0

Figure 9 Typical Junction Capacitance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

K

H

J

B C

M

D

L

F

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Q(nC)

, TOTAL GATE CHARGE

g

Figure 10 Gate Charge

SOT363

Dim Min Max Typ

A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11

0° 8° -



All Dimensions in mm

DMN3190LDW

Document number: DS36192 Rev. 4 - 2

4 of 5

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September 2013

© Diodes Incorporated

NEW PRODUCT

DMN3190LDW

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

ADVANCE INFORMATION

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
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Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

G

Z

Y

X

C2

C2

C1

Dimensions Value (in mm)

Z 2.5
G 1.3
X 0.42

Y 0.6
C1 1.9
C2 0.65

IMPORTANT NOTICE

LIFE SUPPORT

DMN3190LDW

Document number: DS36192 Rev. 4 - 2

5 of 5

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September 2013

© Diodes Incorporated