Diodes DMN3150LW User Manual

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Features

• Low On-Resistance:
R

R

< 88mΩ @ V

DS(ON)

< 138mΩ @ V

DS(ON)

GS

GS

= 4.5V

= 2.5V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

Maximum Ratings @T

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1) TA = 25°C
TA = 70°C
Drain Current (Note 1) Pulsed
Body-Diode Continuous Current (Note 1)

= 25°C unless otherwise specified

A

DMN3150L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

SOT-323

Gate

TOP VIEW

V
V

Drain

Source

EQUIVALENT CIRCUIT

DSS

GSS

ID

IDM

IS

D

GS

Pin Configuration

28 V

±12

1.6

1.2

6.4 A

1.5 A

V
A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Source-Drain Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 1. Device mounted on 1in2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMN3150LW

Document number: DS31514 Rev. 1 - 2

2. No purposefully added lead.

4. Short duration pulse test used to minimize self-heating effect.

= 25°C unless otherwise specified

A

P

R

θ

T

J, TSTG

BV

DSS

I

DSS

I

GSS

V

R

DS(ON)

GS(th)

0.62 0.94 1.4 V

|Yfs|
V

SD

C

iss

C

oss

C

rss

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D
JA

28

⎯ ⎯

⎯ ⎯
⎯ ⎯

⎯

⎯
⎯

73

115

5.4

⎯ ⎯

⎯
⎯
⎯

305

74
48

350 mW
357 °C/W

-55 to +150 °C

V

V

= 0V, ID = 250μA

800 nA

±80

±800

nA

GS

V

= 28V, VGS = 0V

DS

VGS = ±12V, VDS = 0V
VGS = ±19V, VDS = 0V

VDS = VGS, ID = 250μA

88

138

⎯

1.16 V

⎯
⎯
⎯

VGS = 4.5V, ID = 1.6A

mΩ

VGS = 2.5V, ID = 1.2A

S

VDS = 5V, ID = 2.7A
VGS = 0V, IS = 1.5A

pF

VDS = 5V, VGS = 0V

pF

f = 1.0MHz

pF

August 2008

© Diodes Incorporated

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R

TATIC DR

OUR

C

C, CAPACITANC

F

R

T

T

C

RAIN-SOUR

C

8

6

4

2

0

NEW PRODUCT

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

0.16

E

0.12

Ω

AIN-S

0.08

, S

ON-RESISTANCE ( )

0.04

DS(on)

V = 2.5V

GS

V = 4.5V

GS

V = 10V

GS

DMN3150L

8

V = 5V

DS

Pulsed

6

4

2

0

0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

f = 1 MHz
T = 25°C

A

)
E (p

C

iss

C

oss

C

rss

0

0246

I , DRAIN CURRENT (A)

D

On-Resistance

Fig. 3

vs. Drain C urrent and Gat e Volt age

1.4

1.2

1.0

0.8

8

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 4 Typical Total Capacitance

1.6

E

1.4

V = 4.5V

1.2

D
I

A

1.0

GS

I = 1.6A

D

, S

DS(ON)

0.6

0.4

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (C)

Fig. 6 Normalized Static Drain-Source On-Resistance

A

vs. Ambien t T empe rature

DMN3150LW

Document number: DS31514 Rev. 1 - 2

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August 2008

© Diodes Incorporated

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NEW PRODUCT

8

6

4

2

0

0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Ordering Information (Note 5)

Part Number Case Packaging

DMN3150LW-7 SOT-323 3000/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

31N

31N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)

YM

M = Month (ex: 9 = September)

Package Outline Dimensions

DMN3150LW

Document number: DS31514 Rev. 1 - 2

K

J

A

TOP VIEW

G
H

DF

C

B

M

L

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Dim Min Max Typ

SOT-323

A 0.25 0.40 0.30
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D - - 0.65

F 0.30 0.40 0.425
G 1.20 1.40 1.30
H 1.80 2.20 2.15

J 0.0 0.10 0.05
K 0.90 1.00 1.00

L 0.25 0.40 0.30
M 0.10 0.18 0.11

0° 8° -

α

All Dimensions in mm

DMN3150L

August 2008

© Diodes Incorporated

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DMN3150L

Suggested Pad Layout

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

NEW PRODUCT

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

Y

Z

C

Dimensions Value (in mm)

Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0

X E

IMPORTANT NOTICE

LIFE SUPPORT

DMN3150LW

Document number: DS31514 Rev. 1 - 2

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August 2008

© Diodes Incorporated