Diodes DMN3150LW User Manual

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Features

• Low On-Resistance:
R

R

< 88mΩ @ V

DS(ON)

< 138mΩ @ V

DS(ON)

GS

GS

= 4.5V

= 2.5V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

Maximum Ratings @T

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1) TA = 25°C
TA = 70°C
Drain Current (Note 1) Pulsed
Body-Diode Continuous Current (Note 1)

= 25°C unless otherwise specified

A

DMN3150L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-323

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.006 grams (approximate)

SOT-323

Gate

TOP VIEW

V
V

Drain

Source

EQUIVALENT CIRCUIT

DSS

GSS

ID

IDM

IS

D

GS

Pin Configuration

28 V

±12

1.6

1.2

6.4 A

1.5 A

V
A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range

Electrical Characteristics @T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 4)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body Leakage

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Source-Drain Diode Forward Voltage

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 1. Device mounted on 1in2 FR-4 PCB on 2oz. Copper. t ≤ 10 sec.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMN3150LW

Document number: DS31514 Rev. 1 - 2

2. No purposefully added lead.

4. Short duration pulse test used to minimize self-heating effect.

= 25°C unless otherwise specified

A

P

R

θ

T

J, TSTG

BV

DSS

I

DSS

I

GSS

V

R

DS(ON)

GS(th)

0.62 0.94 1.4 V

|Yfs|
V

SD

C

iss

C

oss

C

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D
JA

28

⎯ ⎯

⎯ ⎯
⎯ ⎯

⎯

⎯
⎯

73

115

5.4

⎯ ⎯

⎯
⎯
⎯

305

74
48

350 mW
357 °C/W

-55 to +150 °C

V

V

= 0V, ID = 250μA

800 nA

±80

±800

nA

GS

V

= 28V, VGS = 0V

DS

VGS = ±12V, VDS = 0V
VGS = ±19V, VDS = 0V

VDS = VGS, ID = 250μA

88

138

⎯

1.16 V

⎯
⎯
⎯

VGS = 4.5V, ID = 1.6A

mΩ

VGS = 2.5V, ID = 1.2A

S

VDS = 5V, ID = 2.7A
VGS = 0V, IS = 1.5A

pF

VDS = 5V, VGS = 0V

pF

f = 1.0MHz

pF

August 2008

© Diodes Incorporated

W

R

TATIC DR

OUR

C

C, CAPACITANC

F

R

T

T

C

RAIN-SOUR

C

8

6

4

2

0

NEW PRODUCT

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

0.16

E

0.12

Ω

AIN-S

0.08

, S

ON-RESISTANCE ( )

0.04

DS(on)

V = 2.5V

GS

V = 4.5V

GS

V = 10V

GS

DMN3150L

8

V = 5V

DS

Pulsed

6

4

2

0

0.5 1 1.5 2 2.5 3

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

f = 1 MHz
T = 25°C

A

)
E (p

C

iss

C

oss

C

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0

0246

I , DRAIN CURRENT (A)

D

On-Resistance

Fig. 3

vs. Drain C urrent and Gat e Volt age

1.4

1.2

1.0

0.8

8

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 4 Typical Total Capacitance

1.6

E

1.4

V = 4.5V

1.2

D
I

A

1.0

GS

I = 1.6A

D

, S

DS(ON)

0.6

0.4

ON-RESISTANCE (NORMALIZED)

0.8

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (C)

Fig. 6 Normalized Static Drain-Source On-Resistance

A

vs. Ambien t T empe rature

DMN3150LW

Document number: DS31514 Rev. 1 - 2

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August 2008

© Diodes Incorporated