Diodes DMN3150L User Manual

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

 Low On-Resistance:

 R
 R
 R

 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

< 54m @ V

DS(ON)

< 72m @ V

DS(ON)

< 115m @ V

DS(ON)

GS

GS

GS

= 10V
= 4.5V

= 2.5V

TOP VIEW

Gate

SOT-23

Drain

Source

EQUIVALENT CIRCUIT

DMN3150L

Mechanical Data

 Case: SOT-23
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Marking Information: See Page 4
 Ordering Information: See Page 4
 Weight: 0.008 grams (approximate)

D

GS

Pin Configuration

Ordering Information (Note 4)

Part Number Case Packaging

DMN3150L-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/ products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMN3150L

Document number: DS31126 Rev. 9 - 2

31N

Shanghai A/T Site

www.diodes.com

31N = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

YM

Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 5

October 2013

© Diodes Incorporated



)

g

g

g

)

r

)

DMN3150L

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5) TA = +25°C
TA = +70°C
Drain Current (Note 5) Pulsed
Body-Diode Continuous Current (Note 5)

V
V

DSS

GSS

ID

IDM

IS

30 V

12

3.8

3.1
15 A

2.0 A

V

A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range

P

R

T

J, TSTG

D

JA

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

30

 

 

 

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Source-Drain Diode Forward Voltage

V

GS(th

R

DS (ON)

|Yfs| 
V

0.62 0.92 1.4 V




39
52
90

3

 

SD

DYNAMIC CHARACTERISTICS (Note 7)

Gate Resistance

Total Gate Charge (10V)

Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB. t ≤5 sec.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

DMN3150L

Document number: DS31126 Rev. 9 - 2

R

g

Q

g

Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

C

iss

C

oss

C

rss

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www.diodes.com

- 4.17 - 

- 8.2 - nC

- 3.7 - nC

- 0.7 - nC

- 1.1 - nC

- 1.14 - ns

- 3.49 - ns

- 15.02 - ns

- 3.26 - ns







305

74
48

1.4 W
90 °C/W

-55 to +150 °C

V

V

= 0V, ID = 250A

800 nA

80

800

nA

GS

V

= 28V, VGS = 0V

DS

VGS = ±12V, VDS = 0V
VGS = ±19V, VDS = 0V

VDS = VGS, ID = 250A

54
72

115



1.16 V

VGS = 10V, ID = 3.8A

m

VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A

S

VDS = 5V, ID = 3.1A
VGS = 0V, IS = 2.0A

V

DS

=0V, VGS = 0V,

f = 1MHz

= 10 V, VDS = 10V,

V

GS

I

= 3.8 A

D

V

=4.5 V, VDS = 10V,

GS

I

= 3.8 A

D





V

DD

R

GEN

pF

VDS = 5V, VGS = 0V

pF

f = 1.0MHz

pF

= 15V, V

= 6, RL = 3.9

= 10V,

GEN

October 2013

© Diodes Incorporated