Diodes DMN313DLT User Manual

n

DMN313DLT

Product Summary

V

R

(BR)DSS

2 @ V

30V

3.2 @ VGS = 2.5V 210mA

DS(ON)

= 4V 270mA

GS

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

NEW PRODUCT

ESD PROTECTED TO 2kV

I

D

TA = 25°C

SOT-523

Top View

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 2kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drai

D

Gate

Gate
Protection

Diode

Equivalent Circuit

Source

G

Top View

Pin-Out

S

Ordering Information (Note 3)

Part Number Case Packaging

DMN313DLT-7 SOT-523 3000 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NA2

YM

DMN313DLT

Document number: DS35078 Rev. 2 - 2

NA2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

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)

g

g

g

g

)

r

)

DMN313DLT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = 4.0V

Continuous Drain Current (Note 5) VGS = 4.0V

Continuous Drain Current (Note 5) VGS = 4.0V

Continuous Drain Current (Note 4) VGS = 2.5V

Continuous Drain Current (Note 5) VGS = 2.5V

Steady

State

Steady

State
t ≤ 10s
Steady

State
t ≤ 10s

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

NEW PRODUCT

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R
Power Dissipation (Note 5) t ≤ 10s
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s R
Operating and Storage Temperature Range

Characteristic Symbol Max Unit

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

D

I

DM

P

D

JA

P

D

JA

P

D

JA

, T

T

J

STG

30 V

±20 V

0.27

0.21

0.31

0.25

0.38

0.3

0.21

0.15

0.29

0.22

A

A

A

A

A

1.2 A

0.28 W
474 °C/W

0.36 W
361 °C/W

0.52 W
252 °C/W

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 0.1

- - ±1.0

VGS = 0V, ID = 250A

μA
μA

= 30V, VGS = 0V

V

DS

= ±20V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 1.5 V

- 1.3 2

- 1.6 3.2

|

- 93 - mS

- 0.7 1.3 V

VDS = VGS, ID = 250A

= 4V, ID = 10mA

V

Ω

GS

V

= 2.5V, ID = 1mA

GS

VDS = 3V, ID = 10mA

VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

oss

C

rss

R

Q
Q
Q

t

D(on

t

t

D(off

t

iss

s
d

f

- 36.3 -

- 7.6 -

- 4.7 -

- 128 -

- 0.5 -

- 0.1 -

- 0.1 -

- 4.5 - ns

- 2.24 - ns

- 19.2 - ns

- 28.2 - ns

V

= 5V, VGS = 0V,

pF

Ω

nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 15V,

GS

= 10mA

I

D

V

= 4.5V, VDS = 15V,

GS

R

= 2,

G

= 180mA

I

D

DMN313DLT

Document number: DS35078 Rev. 2 - 2

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R

N CUR

REN

T

RAIN

C

URREN

T

R

R

OUR

CE ON-R

TANC

R

R

OUR

CE ON-R

TANC

R

TATIC DRAIN

OUR

C

O

N-R

TAN

C

DMN313DLT

NEW PRODUCT

1.0

V = 10V

GS

V = 5.0V

0.8

GS

(A)

V = 4.0V

GS

V = 3.0V

GS

V = 2.5V

GS

0.6

0.4

AI

D

-I , D

0.2

0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

3

Ω

E ( )

2.5

2

ESIS

V = 2.5V

GS

V = 4.5V

GS

1.5

V = 10V

GS

1

AIN-S

0.5

, D

V = 2.0V

GS

V = 1.5V

GS

1

V = 10V

DS

T = 85°C

A

(A)

0.1

T = 125°C

A

T = 150°C

A

T = 25°C

A

T = -55°C

A

0.01

D

I, D

0.001
0 0.5 1.0 1.5 2.0 2.5 3.0

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

10

Ω

V = 5.0V

GS

E ( )

T = 125°C

A

T = 150°C

A

ESIS

1

T = 85°C

A

T = 25°C

A

T = -55°C

A

AIN-S
, D

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G at e Vol tage

Ω

3

DS(ON)

0.1
0 0.2 0.4 0.6 0.8 1

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.6

E ( )

2.5

ESIS

V = 10V

GS

I = 300mA

D

2

E,

1.5

V = 10V

GS

I = 150mA

D

-S

1.4

1.2

1

I = 1mA

D

1

0.8

0.5

, S

0

DSON

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

GS(TH)

V , GATE THRESHOLD VOLTAGE (V)

0.6

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Fig. 6 Gat e Threshold V ariation vs. Ambien t Temperatur e

DMN313DLT

Document number: DS35078 Rev. 2 - 2

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C

UNC

TIO

N

CAPACITAN

C

p

F

DMN313DLT

NEW PRODUCT

60

f=1MHz

55

)

50

E (

45
40
35

30
25
20
15

, J

T

10

5

C

0

RSS

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 7 Typical Junction Capacitance

1

r(t) @ D=0.5

r(t) @ D=0.3

r(t) @ D=0.7

C

ISS

C

OSS

r(t) @ D=0.9

10

8

V = 15V

DS

I = 800mA

D

GS

V (V)

6

4

2

0

0 0.2 0.4 0.6 0.8 1 1.2

Q - (nC)

G

Fig. 08 Gate Charge Characteristics

0.1

r(t) @ D=0.1

r(t) @ D=0.05

r(t) @ D=0.02

0.01

r(t) @ D=0.01

r(t), TRANSIENT THERMAL RESISTANCE

r(t) @ D=0.005

r(t) @ D=Single Pulse

R(t)=r(t) * R

θθ

JA JA

R =54°C/W

θ

JA

Duty Cycle, D=t1/ t2

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)

Fig. 9 Transi ent Therm al Resis tance

Package Outline Dimensions

K

J

DMN313DLT

Document number: DS35078 Rev. 2 - 2

A

C

B

Dim Min Max Typ

G
H

N

M

D

L

SOT-523

A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D

⎯ ⎯

0.50

G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50

0° 8°

α

⎯

All Dimensions in mm

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DMN313DLT

Suggested Pad Layout

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

NEW PRODUCT

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

Y

Z

X

E

C

IMPORTANT NOTICE

LIFE SUPPORT

Dimensions Value (in mm)

Z 1.8
X 0.4
Y 0.51
C 1.3
E 0.7

DMN313DLT

Document number: DS35078 Rev. 2 - 2

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