Diodes DMN313DLT User Manual

n

DMN313DLT

Product Summary

V

R

(BR)DSS

2 @ V

30V

3.2 @ VGS = 2.5V 210mA

DS(ON)

= 4V 270mA

GS

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

) and yet maintain superior switching

DS(on)

NEW PRODUCT

ESD PROTECTED TO 2kV

I

D

TA = 25°C

SOT-523

Top View

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 1)

• ESD Protected up to 2kV

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.002 grams (approximate)

Drai

D

Gate

Gate
Protection

Diode

Equivalent Circuit

Source

G

Top View

Pin-Out

S

Ordering Information (Note 3)

Part Number Case Packaging

DMN313DLT-7 SOT-523 3000 / Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

NA2

YM

DMN313DLT

Document number: DS35078 Rev. 2 - 2

NA2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 5

www.diodes.com

August 2011

© Diodes Incorporated

)

g

g

g

g

)

r

)

DMN313DLT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = 4.0V

Continuous Drain Current (Note 5) VGS = 4.0V

Continuous Drain Current (Note 5) VGS = 4.0V

Continuous Drain Current (Note 4) VGS = 2.5V

Continuous Drain Current (Note 5) VGS = 2.5V

Steady

State

Steady

State
t ≤ 10s
Steady

State
t ≤ 10s

= 25°C

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

NEW PRODUCT

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) R
Power Dissipation (Note 5) t ≤ 10s
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) t ≤ 10s R
Operating and Storage Temperature Range

Characteristic Symbol Max Unit

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

D

I

DM

P

D

JA

P

D

JA

P

D

JA

, T

T

J

STG

30 V

±20 V

0.27

0.21

0.31

0.25

0.38

0.3

0.21

0.15

0.29

0.22

A

A

A

A

A

1.2 A

0.28 W
474 °C/W

0.36 W
361 °C/W

0.52 W
252 °C/W

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 0.1

- - ±1.0

VGS = 0V, ID = 250A

μA
μA

= 30V, VGS = 0V

V

DS

= ±20V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.5 - 1.5 V

- 1.3 2

- 1.6 3.2

|

- 93 - mS

- 0.7 1.3 V

VDS = VGS, ID = 250A

= 4V, ID = 10mA

V

Ω

GS

V

= 2.5V, ID = 1mA

GS

VDS = 3V, ID = 10mA

VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

C

oss

C

rss

R

Q
Q
Q

t

D(on

t

t

D(off

t

iss

s
d

f

- 36.3 -

- 7.6 -

- 4.7 -

- 128 -

- 0.5 -

- 0.1 -

- 0.1 -

- 4.5 - ns

- 2.24 - ns

- 19.2 - ns

- 28.2 - ns

V

= 5V, VGS = 0V,

pF

Ω

nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 15V,

GS

= 10mA

I

D

V

= 4.5V, VDS = 15V,

GS

R

= 2,

G

= 180mA

I

D

DMN313DLT

Document number: DS35078 Rev. 2 - 2

2 of 5

www.diodes.com

August 2011

© Diodes Incorporated