Product Summary
V
R
(BR)DSS
30V
60mΩ @ V
100mΩ @ VGS = 4.5V
DS(on)
GS
= 10V
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
ADVANCE INFORMATION
) and yet maintain superior switching
DS(on)
TSOT26
Top View
G1
S2
G2
I
D
TA = 25°C
3.5A
2.8A
1
2
3
Top View
DMN3135LVT
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.013 grams (approximate)
6
D1
5
S1
4
D2
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN3135LVT-7 TSOT26 3000 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016
Code X Y Z A B C D
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
31D
YM
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
31D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
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© Diodes Incorporated
May 2012
θ
)
g
g
g
g
g
r
DMN3135LVT
Maximum Ratings @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Thermal Characteristics @ T
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
ADVANCE INFORMATION
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
30 V
±20 V
3.5
2.7
4.3
3.3
2.8
2.1
3.4
2.6
A
A
A
A
25 A
1.5 A
Steady
State
t<10s
Steady
State
t<10s
= 25°C unless otherwise stated
A
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Characteristic Symbol Value Units
P
Steady state
t<10s 109
Steady state
t<10s 72
R
P
R
R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
0.84 W
155
°C/W
1.27 W
102
°C/W
34
-55 to +150 °C
Electrical Characteristics @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
30 - - V
- - 1.0 µA
- - ±100 nA
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
fs
SD
1.3 1.8 2.2 V
-
|
- 4 - S
- 0.8 1 V
35
54
60
100
VDS = VGS, ID = 250A
V
= 10V, ID = 3.1A
m
GS
VGS = 4.5V, ID = 2A
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
C
C
R
Q
Q
Q
Q
t
D(on)
t
D(off)
iss
oss
rss
t
t
s
d
f
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
- 305 -
- 40 -
- 40 -
- 1.4 -
- 4.1 -
- 9.0 -
- 1.2 -
- 1.5 -
- 2.6 -
- 4.6 -
- 13.1 -
- 2.5 -
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V
= 15V, VGS = 0V,
DS
pF
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 3.1A
nC
ns
= 15V, VGS = 10V, ID = 3.1A
V
DS
= 10V, VDS = 15V,
V
GS
= 3, RL = 4.7
R
G
© Diodes Incorporated
May 2012
R
C
URR
T
R
C
URRENT
R,DR
OUR
ON-R
R
R
OUR
ON-R
R
R
OUR
CE ON-R
TANC
DMN3135LVT
10.0
V =4.0V
GS
8.0
V =4.5V
(A)
EN
6.0
GS
V =3.5V
GS
(A)
10
8
6
V = 5.0V
DS
T = 150 C
A
T = 125 C
A
T = 85C
A
°
°
°
T = 25C
°
A
4.0
AIN
D
I, D
V =10V
GS
V =3.0V
GS
2.0
V =2.5V
GS
0.0
00.511.522.533.544.55
V , DRAIN -SOURCE VOLTAGE(V)
DS
Fig. 1 Typical Output Characteristics
1
Ω
ADVANCE INFORMATION
ESISTANCE( )
0.1
CE
AIN-S
DS(ON)
0.01
048121620
I , DRAIN SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Curr ent and G at e Voltage
1.6
1.4
AIN
D
I, D
4
T = -55C
°
A
2
0
012 345
V , GATE SOURCE VOLTAGE(V)
GS
Fig. 2 Typical Transfer Characteristics
0.16
Ω
V = 4.5V
GS
0.12
T = 125 C
ESISTANCE( )
CE
AIN-S
0.08
0.04
A
°
T = 25C
, D
DS(ON)
0
0246810
I , DRAIN SOURCE CURRENT (A)
D
A
T = 150 C
A
T = 85C
A
°
T = -55C
A
°
Fig. 4 Typical On-Resistance vs.
Drain Curr ent and Temperature
0.10
Ω
E ( )
V=4.5V
GS
I=5A
D
0.08
°
°
ESIS
0.06
0.04
V =10V
GS
I=10A
D
(Normalized)
1.2
1
AIN-S
3 of 6
0.02
, D
DS(ON)
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 6 On-Resistance Variation with T emperature
°
May 2012
© Diodes Incorporated
0.8
DS(ON)
R , DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 5 On-Resistance Variation with Temperature
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
www.diodes.com
OUR
CE CUR
REN
T
)
C
UNC
TIO
N CAPACITAN
C
F
GE CUR
RENT
P
P
T
R
T
P
OWER
DMN3135LVT
2.4
10
2
1.6
(A
8
T= 25C
°
6
A
1.2
4
0.8
S
I, S
0.4
GS(TH)
V , GATE THRESHOLD VOLT AGE(V)
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Thresh ol d Variation vs. Ambien t Temperature
1000
A
f = 1MHz
)
ADVANCE INFORMATION
E (p
C
ISS
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
10000
T =150°C
1000
A
(nA)
T =125°C
A
100
100
T =85°C
A
10
C
OSS
C
, J
RSS
T
DSS
I, LEAKA
1
T =-55°C
A
T =25°C
A
10
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
10
8
6
4
0.1
0 2 4 6 81012141618202224262830
V , DRAIN-SOURCE VOLTAGE(V)
DS
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
Single Pulse
°
R = 157 C/W
θ
(W)
ANSIEN
80
60
40
JA
R = R * r
(t) (t)
θθ
JA JA
T -T = P * R
JAθJA(t)
EAK
,
4 of 6
20
(pk)
0
0.00001 0.001 0.1 10 1,000
t1, Pulse Duration Time (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
© Diodes Incorporated
May 2012
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0246810
Q , TOTAL GATE CHARGE (nC)
g
Fig. 11 Gate - Charge C haracter istics
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
www.diodes.com
T
R
T T
HER
R
TANC
θ
DMN3135LVT
1
D = 0.7
E
D = 0.5
D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
R (t) = r(t) * R
θθ
JA JA
R = 157°C/W
θ
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
ADVANCE INFORMATION
D
e1
E1
A2
A
e
6x b
E
L2
4x 1
θ
c
L
A1
TSOT26
Dim Min Max Typ
A
A1 0.01 0.10
A2 0.84 0.90
D
E
E1
b 0.30 0.45
c 0.12 0.20
e
e1
1.00
−
− −
− −
− −
− −
− −
−
−
−
2.90
2.80
1.60
−
−
0.95
1.90
L 0.30 0.50
L2
− −
0.25
θ 0° 8° 4°
θ1 4° 12°
−
All Dimensions in mm
Suggested Pad Layout
Y1
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
C C
X (6x)
Y (6x)
Dimensions Value (in mm)
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C 0.950
X 0.700
Y 1.000
Y1 3.199
May 2012
© Diodes Incorporated
DMN3135LVT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
ADVANCE INFORMATION
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMN3135LVT
Document number: DS35408 Rev. 6 - 2
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May 2012
© Diodes Incorporated
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