Diodes DMN3135LVT User Manual

Product Summary

V

R

(BR)DSS

30V

60mΩ @ V

100mΩ @ VGS = 4.5V

DS(on)

GS

= 10V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• Backlighting

• DC-DC Converters

• Power management functions

ADVANCE INFORMATION

) and yet maintain superior switching

DS(on)

TSOT26

Top View

G1

S2

G2

I

D

TA = 25°C

3.5A

2.8A

1

2

3

Top View

DMN3135LVT

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: TSOT26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.013 grams (approximate)

6

D1

5

S1

4

D2

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN3135LVT-7 TSOT26 3000 / Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016

Code X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

31D

YM

DMN3135LVT

Document number: DS35408 Rev. 6 - 2

31D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

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© Diodes Incorporated

May 2012

θ

)

g

g

g

g

g

r

DMN3135LVT

Maximum Ratings @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)

Thermal Characteristics @ T

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

30 V

±20 V

3.5

2.7

4.3

3.3

2.8

2.1

3.4

2.6

A

A

A

A

25 A

1.5 A

Steady

State
t<10s

Steady

State
t<10s

= 25°C unless otherwise stated

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<10s 109

Steady state

t<10s 72

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

0.84 W
155

°C/W

1.27 W
102

°C/W

34

-55 to +150 °C

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

30 - - V

- - 1.0 µA

- - ±100 nA

VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

1.3 1.8 2.2 V

-

|

- 4 - S

- 0.8 1 V

35
54

60

100

VDS = VGS, ID = 250A

V

= 10V, ID = 3.1A

m

GS

VGS = 4.5V, ID = 2A

VDS = 5V, ID = 3.1A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C
C
C

R
Q

Q
Q
Q

t

D(on)

t

D(off)

iss

oss

rss

t

t

s
d

f

DMN3135LVT

Document number: DS35408 Rev. 6 - 2

- 305 -

- 40 -

- 40 -

- 1.4 -

- 4.1 -

- 9.0 -

- 1.2 -

- 1.5 -

- 2.6 -

- 4.6 -

- 13.1 -

- 2.5 -

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V

= 15V, VGS = 0V,

DS

pF

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 3.1A

nC

ns

= 15V, VGS = 10V, ID = 3.1A

V

DS

= 10V, VDS = 15V,

V

GS

= 3, RL = 4.7

R

G

© Diodes Incorporated

May 2012