Diodes DMN3115UDM User Manual

Product Summary

I

V

(BR)DSS

30V

R

60mΩ @ V
80mΩ @ VGS = 2.5V

130mΩ @ VGS = 1.5V

DS(on) max

= 4.5V

GS

D

TA = +25°C

3.2A

2.7A

2.1A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 General Purpose Interfacing Switch
 Power Management Functions

Analog Switch

ESD PROTECTED

SOT26

Top View

DMN3115UDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Very Low Gate Threshold Voltage
 Low Input Capacitance
 ESD Protected Gate
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT26
 Case Material – Molded Plastic, “Green” Molding Compound. UL

Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Finish - Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.015 grams (approximate)

D3

D4

D1

Top View

Internal Schematic

D2

S1

G1

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

DMN3115UDM-7 Commercial SOT26 3,000/Tape & Reel
DMN3115UDMQ-7 Automotive SOT26 3,000/Tape & Reel
DMN3115UDM-13 Commercial SOT26 10,000/Tape & Reel

DMN3115UDMQ-13 Automotive SOT26 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

3N1

3N1 = Marking Code
YM = Date Code Marking

YM

Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

DMN3115UDM

Document number: DS31187 Rev. 8 - 2

1 of 5

www.diodes.com

November 2013

© Diodes Incorporated

)

R

N

C

URREN

T

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Pulsed Drain Current (Note 6)

V

DSS

V

GSS

I

D

I

DM

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

V

R

DS (ON)

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 6. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.

7. Short duration pulse test used to minimize self-heating effect.

10

9

8

P

R

θJA

T

, T

J

DSS

I

 

DSS

I

 

GSS

0.5

GS(th

|Y

|

fs

V

SD

C

iss

C

oss

C



rss

D

STG

30









10

9

8

30 V
±8 V

3.2 A

12.8 A

900 mW
139 °C/W

-55 to +150 °C

 

V

1 μA

μA

5

1.0 V



40

60

50

80

130



mΩ

S

76

8

0.7 1.1 V

476

77
59

V = 5V

DS

Pulsed





pF
pF
pF

DMN3115UDM

VGS = 0V, ID = 100μA
VDS = 30V, VGS = 0V
VGS = 8V, VDS = 0V

VDS = VGS, ID = 250μA

= 4.5V, ID = 6A

V

GS

VGS = 2.5V, ID = 2A
VGS = 1.5V, ID = 1.0A
VDS =10V, ID = 6A
VGS = 0V, IS = 2A

= 15V, VGS = 0V

V

DS

f = 1.0MHz

7

6

5

4

3

2

1

0

(A)

AI

D

I, D

7

6

5

4

3

2

1

0

0

0.5 1 1.5 2

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

DMN3115UDM

Document number: DS31187 Rev. 8 - 2

2 of 5

www.diodes.com

November 2013

© Diodes Incorporated