Diodes DMN3112SSS User Manual

Product Summary

I

max

D

V

(BR)DSS

30V

R

57mΩ @ V

112mΩ @ VGS = 4.5V

DS(ON)

max

GS

TA = +25°C

= 10V

6.0A

3.8A

Description and Applications

This MOSFET has been designed to minimize the on-state
resistance (R
performance, making it ideal for high efficiency power management

applications.

 Backlighting
 Power Management Functions
 DC-DC Converters

) and yet maintain superior switching

DS(on)

SOP-8L

TOP VIEW

S

S

G

Internal Schematic

DMN3112SSS

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOP-8L
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020D
 Terminals Connections: See Diagram
 Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

 Weight: 0.074g (approximate)

D

DS

D

D

D

Top View

G

S

Equivalent circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN3112SSS-13 SOP-8L 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN3112SSS

Document number: DS31582 Rev. 2 - 2

8 5

N3112SS

WW

YY

1 4

Chengdu A/T Site Shanghai A/T Site

8 5

N3112SS

YY

WW

1 4

= Manufacturer’s Marking
N3112SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

1 of 5

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October 2013

© Diodes Incorporated



)

D

RAIN

CUR

R

N

T

R

C

URR

T

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

T

Drain Current (Note 5) Steady
State

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 7)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on 2 oz copper pad layout with R

6. Pulse width 10μS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

10

= +25°C, unless otherwise specified.)

A

BV

DSS

I

 

DSS

I

GSS

V

GS(th

R

DS(ON)

g

fs

V

SD

C

iss

C

oss

C

rss

= 50°C/W.

JA

30 V

20

6

4.5

24 A

2.5 W
50 °C/W

-55 to +150 °C

V

30

V

DSS

V

GSS

I

D

I

DM

P

D

R

JA

T

J, TSTG

 

800 nA











1


43

83

2.8

80

800

nA

2.2 V

57

112



mΩ

S

0.5 0.8 1.2 V





268

73
50





pF
pF
pF

10

DMN3112SSS

V

= 0V, ID = 250μA

GS

V

= 30V, VGS = 0V

DS

= 20V, VDS = 0V

V

GS

= 25V, VDS = 0V

V

GS

V

= VGS, ID = 250μA

DS

= 10V, ID = 5.8A

V

GS

= 4.5V, ID = 3.7A

V

GS

V

= 10V, ID = 3.7A

DS

VGS = 0V, IS = 2.1A

= 15V, VGS = 0V

V

DS

f = 1.0MHz

V

A

V = 10V

8

(A)

6

E

GS

V = 4.5V

GS

V = 4.0V

GS

(A)

EN

8

6

4

D

I,

V = 3.5V

GS

2

V = 3.0V

V = 2.5V

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Fig. 1 Typical Output Characteristic

DMN3112SSS

Document number: DS31582 Rev. 2 - 2

GS

2 of 5

www.diodes.com

4

AIN

T = 150°C

D

I, D

2

A

T = 125°C

A

T = 85°C

T = 25°C

A

T = -55°C

A

A

0

12 3 45

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

© Diodes Incorporated

October 2013