Diodes DMN3110S User Manual

NEW PRODUCT

Product Summary

I

max

D

V

R

(BR)DSS

73m @ V

30V

110m @ VGS = 4.5V 2.7A

max

DS(ON)

= 10V 3.3A

GS

TA = +25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

 General Purpose Interfacing Switch
 Power Management Functions
 Boost Application
 Analog Switch

DMN3110S

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

 Case: SOT-23
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.027 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN3110S-7 SOT-23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMN3110S

Document number: DS31561 Rev. 3 - 2

Shanghai A/T Site

www.diodes.com

MN7 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

© Diodes Incorporated

October 2013







)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

Steady

State

t≦10sec

Steady

State

Pulsed Drain Current (Note 7)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6) t≦10sec
Thermal Resistance, Junction to Ambient (Note 6) t≦10sec
Operating and Storage Temperature Range

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

P

R

P

R

P

R

T

J, TSTG

DMN3110S

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

D

JA

D

JA

D

JA

-55 to +150 °C

30 V

±20 V

2.5

2.0

3.3

2.7

3.8

3.1

2.7

2.1

A

A

A

A

25 A

0.74 W

173.4 °C/W

1.3 W

99.1 °C/W

1.8 W
72 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage

BV

I

GSS

DSS

DSS

30 - - V

- - 1.0 A

- - ±100 nA

VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V

VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

1.0 - 3.0 V

- 54 73

- 88 110

|

- 4.8 - mS

- 0.75 1.0 V

VDS = VGS, ID = 250A

V

= 10V, ID = 3.1A

m

GS

V

= 4.5V, ID = 2A

GS

VDS = 10V, ID = 3.1A

VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, on 1inch square copper plate

7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN3110S

Document number: DS31561 Rev. 3 - 2

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

- 305.8 - pF

- 39.9 - pF

- 39.5 - pF

- 1.4 - 

- 4.1 - nC

- 8.6 - nC

- 1.2 - nC

- 1.5 - nC

- 2.6 - ns

- 4.6 - ns

- 13.1 - ns

- 2.5 - ns

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V

= 15V, VGS = 0V,

DS

f = 1.0MHz

VDS = 0V, VGS = 0V,f = 1.0MHz

V

= 10V, VDS = 10V,

GS

= 3A

I

D

= 15V, VGS = 10V,

V

DD

= 47, RG = 3,

R

L

October 2013

© Diodes Incorporated