Diodes DMN30H4D0LFDE User Manual

Y

Product Summary

V

R

(BR)DSS

4 @ V

300V

4 @ VGS = 4.5V
6 @ VGS = 2.7V

DS(ON)

GS

= 10V

TA = +25°C

0.55A

0.55A

0.44A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Power management functions

• Battery Operated Systems and Solid-State Relays

NEW PRODUCT

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

Ordering Information

U-DFN2020-6

Bottom View

(Note 4)

DMN30H4D0LFDE

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

I

D

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: U-DFN2020-6

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

e4

D

G

Pin Out

Bottom View

Equivalent Circuit

S

Part Number Compliance Case Quantity per reel

DMN30H4D0LFDE-7 Standard U-DFN2020-6 3,000

DMN30H4D0LFDE-13 Standard U-DFN2020-6 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019

Code A B C D E F G

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN30H4D0LFDE

Document number: DS36380 Rev. 4 - 2

2H

www.diodes.com

2H = Product Type Marking Code

M

YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

May 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (10s pulse, duty cycle ≦1%) IDM

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

NEW PRODUCT

Thermal Resistance, Junction to Case

(Note 5)

(Note 6) 1.98

(Note 5)

(Note 6) 61

(Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

300

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

1 1.7 2.8 V

⎯

Static Drain-Source On-Resistance

R

DS(ON)

⎯

⎯

Diode Forward Voltage

V

SD

⎯

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

DMN30H4D0LFDE

Document number: DS36380 Rev. 4 - 2

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iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

www.diodes.com

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V

DSS

V

GSS

I

D

I

S

P

D

R

JA

θ

R

JC

θ

T

J, TSTG

⎯ ⎯

1 µA

±100 nA

2.3 4

2.3 4

2.4 6

0.7 1.2 V

187.3

11.7

8.7

7.6

0.5

3.3

4.9

4.7

25.8

17.5

⎯

⎯

⎯

⎯

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DMN30H4D0LFDE

300 V

±20 V

0.55

0.43

2 A

2 A

0.63

189

9.3

-55 to +150 °C

V

V

= 0V, ID = 250µA

GS

V

= 240V, V

DS

V

±20V, V

GS =

V

= VGS, ID = 250µA

DS

V

= 10V, ID = 0.3A

GS



V

= 4.5V, ID = 0.2A

GS

V

= 2.7V, ID = 0.1A

GS

VGS = 0V, IS = 0.3A

V

= 25V, VGS = 0V,

pF

nC

nS

DS

f = 1MHz

V

= 192V, VGS = 10V,

DS

= 0.5A

I

D

= 60V, RL =200

V

DS

= 10V, RG = 25

V

GS

A

W

°C/W

= 0V

GS

= 0V

DS

May 2014

© Diodes Incorporated