Diodes DMN30H4D0L User Manual

DMN30H4D0L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

300V

4 @ V

4 @ VGS = 4.5V

DS(ON)

GS

= 10V

TA = +25°C

Description and Applications

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

Description and Applications

NEW PRODUCT

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

) and yet maintain superior switching

DS(ON)

Top View

I

D

0.25A

0.25A

G

Pin Configuration

D

Top View

Features and Benefits

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Solderable per MIL-STD-202, Method 208

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

D

G

S

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN30H4D0L-7 SOT23 3,000/Tape & Reel

DMN30H4D0L-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019

Code A B C D E F G

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

2H = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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February 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (10s pulse, duty cycle ≦1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics (@T

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Characteristic Symbol Value Units

= +25°C, unless otherwise specified.)

A

(Note 5)

(Note 6) 0.47

(Note 5)

(Note 6) 255

(Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

300

 

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

1



Static Drain-Source On-Resistance

R

DS(ON)





Diode Forward Voltage

V

SD



DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C



iss

C



oss

C

rss

Q



g

Q



gs

Q

gd

t

D(on)

t



r

t

D(off)

t

f











DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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V

DSS

V

GSS

I

D

I

DM

I

S

P

D

R

JA



R

JC



T

J, TSTG

 

1.0 µA

±100 nA



3 V

2.1 4

2.1 4

3.8 6

0.7 1.2 V

187.3

11.7

8.7

7.6

0.5

3.3

4.9

4.7

25.8

17.5





















DMN30H4D0L

300 V

±20 V

0.25

0.20

2 A

0.8 A

0.31

377

81

-55 to 150 °C

V

V

= 0V, ID = 250µA

GS

V

= 240V, V

DS

V

GS =

V

= VGS, ID = 250 µA

DS

V

= 10V, ID = 0.3A

GS



V

= 4.5V, ID = 0.2A

GS

V

= 2.7V, ID = 0.1A

GS

VGS = 0V, IS = 0.3A

VDS = 25V, VGS = 0V,

pF

f = 1.0MHz

V

= 192V, VGS = 10V,

nC

nS

DS

= 0.5A

I

D

= 60V, RL =200

V

DS

= 10V, RG = 25

V

GS

±20V, V

GS

DS

A

W

°C/W

= 0V

= 0V

February 2014

© Diodes Incorporated

R

CUR

R

T

RAIN CUR

R

N

T

O

O

R, D

RAIN-SOUR

CE O

N-R

TAN

C

R

R

O

R

O

R

R

D

RAIN

OUR

C

DMN30H4D0L

1.0

0.8

V = 10VGS

V= 4.5V

GS

V= 3.5V

GS

0.8

V = 5.0VDS

0.7

0.6

(A)

EN

0.6

V= 3.0V

GS

(A)

E

0.5

0.4

T = 150°C

AIN

D

I, D

0.4

0.2

V= 2.5V

GS

D

I, D

0.3

0.2

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

0.1

T = -55°C

A

NEW PRODUCT

V= 2.2V

0.0
012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

GS

Figure 1 Typical Output Characteristics

3



2.8

2.6

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE-SOURCE VOLTAGE (V)

GS



E ( )

5.5

Figure 2 Typical Transfer Characteristics

6

I = 200mA

D

5

2.4

2.2

N-RESISTANCE ( )

2

URCE

1.8

V = 4.5VGS

V = 10VGS

1.6

ESIS

4.5

4

I = 300mA

D

3.5

3

1.4

1.2

DS(ON)

R , DRAIN-S

1

0 0.1 0.2 0.3 0.4 0.5

I , DRAIN-SOURCE CURRENT (A)D
Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

8

V = 4.5VGS



7

T = 150°C

6

ESISTANCE ( )

5

N-

4

CE
U

3

AIN-S

2

, D

1

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

I , DRAIN CURRENT (A)

D

T = 125°C

A

A

T = 25°C

A

T = 85°C

A

T = -55°C

A

Figure 5 Typical On-Resistance vs.

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

Drain Current and Temperature

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2.5

DS(ON)

2

0 2 4 6 8 1012 1416 1820

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristics

3

V=V

10

2.5

E

GS

I = 400mA

D

2

-S

1.5

V=5V

GS

I = 200mA

D

,

1

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J



February 2014

© Diodes Incorporated

R

RAIN-SOUR

CE O

N-R

TAN

C

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

C

UNC

TION CAPACITANC

GAT

THR

H

O

OLT

G

R

C

U

R

RENT

NEW PRODUCT

6

3



E ( )

5

4

ESIS

V=5V

GS

I = 200mA

D

V=V

10

GS

I = 300mA

D

3

2

, D

1

DS(ON)

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J



1

E (V)

2.5

2

LD V

I = 250µA

D

1.5

1

0.5

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

1,000

0.9

(A)

S

I, S

0.8

0.7

0.6

0.5

0.4

0.3

0.2

T = 150°C

A

T = 125°C

A

T= 85°C

A

E (pF)

100

T= 25°C

A

10

T= -55°C

A

, J

T

0.1

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

10

f = 1MHz

1

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

10

R

DS(on)

Limited

DMN30H4D0L

I= 1mA

D



C

rss

C

iss

C

oss

E (V)

8

A

6

LD V

ES

4

V = 192V

DS

I= A

0.5

D

E

2

GS

V

0

012345678

Q(nC)

, TOTAL GATE CHARGE

g

Figure 11 Gate Charge

1

(A)

0.1

AIN

D

-I , D

0.01

0.001

T = 150°C

J(max)

T = 25°C

A

V = 4.5V

GS

Single Pulse
DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

P = 100ms

W

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.1 1 10 100 1000

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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T

R

T T

HER

R

TANC

DMN30H4D0L

1

D = 0.9
D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

r(t),

D = 0.005

D = Single Pulse

R (t) = r(t) * R



JA JA

R = 160°C/W



JA

Duty Cycle, D = t1/ t2

0.001

NEW PRODUCT

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

K

J

A

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40
B 1.20 1.40 1.30

C

B

C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83

H

H 2.80 3.00 2.90
J 0.013 0.10 0.05

K1

F

D

G

L

M

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

0° 8° -



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

Y

Z

C

Dimensions Value (in mm)

Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35

X

E

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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NEW PRODUCT

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final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN30H4D0L

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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