Diodes DMN30H4D0L User Manual

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DMN30H4D0L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

300V

4 @ V

4 @ VGS = 4.5V

DS(ON)

= 10V

TA = +25°C

Description and Applications

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

Description and Applications

NEW PRODUCT

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

) and yet maintain superior switching

DS(ON)

Top View

0.25A

Pin Configuration

Top View

Features and Benefits

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Solderable per MIL-STD-202, Method 208

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN30H4D0L-7 SOT23 3,000/Tape & Reel

DMN30H4D0L-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019

Code A B C D E F G

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

2H = Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

= +25°C

= +70°C

Pulsed Drain Current (10s pulse, duty cycle ≦1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics (@T

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Characteristic Symbol Value Units

= +25°C, unless otherwise specified.)

(Note 5)

(Note 6) 0.47

(Note 5)

(Note 6) 255

(Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

DSS

GSS

DSS

300

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)



Static Drain-Source On-Resistance

DS(ON)



Diode Forward Voltage



DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.



iss



oss

rss



D(on)



D(off)





DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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DSS

GSS



J, TSTG

 

1.0 µA

±100 nA



3 V

2.1 4

3.8 6

0.7 1.2 V

187.3

11.7

8.7

7.6

0.5

3.3

4.9

4.7

25.8

17.5





DMN30H4D0L

300 V

±20 V

0.25

0.20

2 A

0.8 A

0.31

377

-55 to 150 °C

= 0V, ID = 250µA

= 240V, V

GS =

= VGS, ID = 250 µA

= 10V, ID = 0.3A



= 4.5V, ID = 0.2A

= 2.7V, ID = 0.1A

VGS = 0V, IS = 0.3A

VDS = 25V, VGS = 0V,

f = 1.0MHz

= 192V, VGS = 10V,

= 0.5A

= 60V, RL =200

= 10V, RG = 25

±20V, V

°C/W

= 0V

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CUR

RAIN CUR

R, D

RAIN-SOUR

CE O

N-R

TAN

RAIN

OUR

DMN30H4D0L

1.0

0.8

V = 10VGS

V= 4.5V

V= 3.5V

0.8

V = 5.0VDS

0.7

0.6

(A)

0.6

V= 3.0V

(A)

0.5

0.4

T = 150°C

AIN

I, D

0.4

0.2

V= 2.5V

I, D

0.3

0.2

T = 125°C

T = 85°C

T = 25°C

0.1

T = -55°C

NEW PRODUCT

V= 2.2V

0.0 012345

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics



2.8

2.6

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE-SOURCE VOLTAGE (V)



E ( )

5.5

Figure 2 Typical Transfer Characteristics

I = 200mA

2.4

2.2

N-RESISTANCE ( )

URCE

1.8

V = 4.5VGS

V = 10VGS

1.6

ESIS

4.5

I = 300mA

3.5

1.4

1.2

DS(ON)

R , DRAIN-S

0 0.1 0.2 0.3 0.4 0.5

I , DRAIN-SOURCE CURRENT (A)D Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

V = 4.5VGS



T = 150°C

ESISTANCE ( )

N-

CE U

AIN-S

, D

DS(ON)

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

I , DRAIN CURRENT (A)

T = 125°C

T = 25°C

T = 85°C

T = -55°C

Figure 5 Typical On-Resistance vs.

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

Drain Current and Temperature

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2.5

DS(ON)

0 2 4 6 8 1012 1416 1820

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

V=V

2.5

I = 400mA

-S

1.5

V=5V

I = 200mA

DS(ON)

0.5

ON-RESISTANCE (NORMALIZED)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature



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RAIN-SOUR

CE O

N-R

TAN

GATE THRESH

OLTAG

OUR

CE CUR

REN

UNC

TION CAPACITANC

GAT

THR

OLT

RENT

NEW PRODUCT



E ( )

ESIS

V=5V

I = 200mA

V=V

I = 300mA

, D

DS(ON)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature



E (V)

2.5

LD V

I = 250µA

1.5

0.5

GS(th)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

1,000

0.9

(A)

I, S

0.8

0.7

0.6

0.5

0.4

0.3

0.2

T = 150°C

T = 125°C

T= 85°C

E (pF)

100

T= 25°C

T= -55°C

, J

0.1

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

f = 1MHz

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS(on)

Limited

DMN30H4D0L

I= 1mA



rss

iss

oss

E (V)

LD V

V = 192V

I= A

0.5

012345678

Q(nC)

, TOTAL GATE CHARGE

Figure 11 Gate Charge

(A)

0.1

AIN

-I , D

0.01

0.001

T = 150°C

J(max)

T = 25°C

V = 4.5V

Single Pulse DUT on 1 * MRP Board

P = 10s

P = 1s

P = 100ms

P = 10ms

P = 1ms

P = 100µs

0.1 1 10 100 1000

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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T T

HER

TANC

DMN30H4D0L

D = 0.9 D = 0.7

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

r(t),

D = 0.005

D = Single Pulse

R (t) = r(t) * R



JA JA

R = 160°C/W



Duty Cycle, D = t1/ t2

0.001

NEW PRODUCT

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30

C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83

H 2.80 3.00 2.90 J 0.013 0.10 0.05

K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55

M 0.085 0.18 0.11

0° 8° -



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

Dimensions Value (in mm)

Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

NEW PRODUCT

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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