Diodes DMN30H4D0L User Manual

DMN30H4D0L

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

300V

4 @ V

4 @ VGS = 4.5V

DS(ON)

GS

= 10V

TA = +25°C

Description and Applications

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

Description and Applications

NEW PRODUCT

 DC-DC Converters

 Power management functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

) and yet maintain superior switching

DS(ON)

Top View

I

D

0.25A

0.25A

G

Pin Configuration

D

Top View

Features and Benefits

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Solderable per MIL-STD-202, Method 208

 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram

 Weight: 0.008 grams (approximate)

D

G

S

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN30H4D0L-7 SOT23 3,000/Tape & Reel

DMN30H4D0L-13 SOT23 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2013 2014 2015 2016 2017 2018 2019

Code A B C D E F G

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

2H = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

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e3

February 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (10s pulse, duty cycle ≦1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics (@T

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Characteristic Symbol Value Units

= +25°C, unless otherwise specified.)

A

(Note 5)

(Note 6) 0.47

(Note 5)

(Note 6) 255

(Note 6)

Operating and Storage Temperature Range

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

300

 

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS(th)

1



Static Drain-Source On-Resistance

R

DS(ON)





Diode Forward Voltage

V

SD



DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C



iss

C



oss

C

rss

Q



g

Q



gs

Q

gd

t

D(on)

t



r

t

D(off)

t

f











DMN30H4D0L

Document number: DS36313 Rev. 2 - 2

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www.diodes.com

V

DSS

V

GSS

I

D

I

DM

I

S

P

D

R

JA



R

JC



T

J, TSTG

 

1.0 µA

±100 nA



3 V

2.1 4

2.1 4

3.8 6

0.7 1.2 V

187.3

11.7

8.7

7.6

0.5

3.3

4.9

4.7

25.8

17.5





















DMN30H4D0L

300 V

±20 V

0.25

0.20

2 A

0.8 A

0.31

377

81

-55 to 150 °C

V

V

= 0V, ID = 250µA

GS

V

= 240V, V

DS

V

GS =

V

= VGS, ID = 250 µA

DS

V

= 10V, ID = 0.3A

GS



V

= 4.5V, ID = 0.2A

GS

V

= 2.7V, ID = 0.1A

GS

VGS = 0V, IS = 0.3A

VDS = 25V, VGS = 0V,

pF

f = 1.0MHz

V

= 192V, VGS = 10V,

nC

nS

DS

= 0.5A

I

D

= 60V, RL =200

V

DS

= 10V, RG = 25

V

GS

±20V, V

GS

DS

A

W

°C/W

= 0V

= 0V

February 2014

© Diodes Incorporated