Diodes DMN30H14DLY User Manual

Y

Product Summary

I

D

TA = +25°C

0.21A

0.17A

V

(BR)DSS

300V

R

14 @ V

20 @ VGS = 4.5V

DS(ON)

GS

= 10V

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

ADVANCED INFORMATION

Memories, Transistors, etc

SOT89

Top View

DMN30H14DLY

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89

• Case Material: Molded Plastic, “Green” Molding Compound

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin Finish annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

• Weight: 0.052 grams (approximate)

D

G

S

Pin-out Top

Equivalent Circuit

e3

Ordering Information (Note 4)

Part Number Compliance Case Quantity per reel

DMN30H14DLY-13 Standard SOT89 2,500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

H4

YWW

www.diodes.com

= Manufacturer’s Marking
H4Y = Marking Code
YWW = Date Code Marking
Y= Year (ex: 4 = 2014)
WW = Week (01 - 53)

1 of 6

March 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, duty cycle ≦1%)

Maximum Body Diode Continuous Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ADVANCED INFORMATION

Operating and Storage Temperature Range

Steady

State

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

(Note 5)

(Note 6) 2.2

(Note 5)

(Note 6) 55

(Note 6)

I

D

I

DM

I

S

P

R

θ

R

θ

T

J, TSTG

D

JA

JC

-55 to +150 °C

DMN30H14DLY

300 V

±20 V

0.21

0.16

1

2

0.9

132

9.6

A

A

A

W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

I

DSS

I

GSS

300

DSS

⎯ ⎯

⎯ ⎯

⎯ ⎯

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

1

⎯

⎯

⎯

⎯

6 14

6 20

0.7 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

DMN30H14DLY

Document number: DS36812 Rev. 2 - 2

C

⎯

iss

⎯

⎯

G

g

⎯

gs

⎯

gd

⎯

r

⎯

f

⎯

⎯

rr

⎯

⎯

⎯

⎯

C

C

R

Q

Q

Q

t

D(on)

t

D(off)

Q

oss

rss

t

t

t

rr

2 of 6

www.diodes.com

96

5.8

3.2

12

4

0.3

1.9

3.3

8.6

22

12

43

47

V

V

= 0V, ID = 250µA

GS

1 µA

±100 nA

3 V

Ω

V

= 240V, V

DS

V

±20V, V

GS =

V

= VGS, ID = 250µA

DS

= 10V, ID = 0.3A

V

GS

V

= 4.5V, ID = 0.2A

GS

GS

DS

= 0V

= 0V

VGS = 0V, IS = 0.3A

⎯

V

= 25V, VGS = 0V,

DS

⎯

⎯

pF

f = 1MHz

⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz

⎯

⎯

⎯

nC

= 192V, VGS = 10V,

V

DS

= 0.5A

I

D

⎯

⎯

⎯

nS

= 60V, RL =200

V

DS

= 10V, RG = 25

V

GS

⎯

⎯

⎯

nS

nC

= 100V, IF=1.0A, di/dt=100A/µs

V

R

March 2014

© Diodes Incorporated