Diodes DMN3070SSN User Manual

Product Summary

V

R

(BR)DSS

30V

DS(ON) MAX

40mΩ @ V

50mΩ @ VGS = 4.5V 4.3A

Package

= 10V

GS

SC59

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 Load Switch

 DC-DC Converters

 Power Management Functions

NEW PRODUCT

2kV SC59

ESD PROTECTED

TOP VIEW

I

D

TA = +25°C

5.1A

DMN3070SSN

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SC59

 Case Material – Molded Plastic. UL Flammability Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish - Matte Tin Solderable per MIL-STD-202,

Method 208

 Terminal Connections: See Diagram

 Weight: 0.014 grams (approximate)



D

G

TOP VIEW

Pin Configuration

e3

Drain

Body

Gate

S

Gate
Protection
Diode

Equivalent Circuit

Diode

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMN3070SSN-7 SC59 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2010 2011 2012 2013 2014 2015 2016 2017

Code X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN3070SSN

Document number: DS36169 Rev. 2 - 2

N70

YM

www.diodes.com

N70 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: Z = 2012
M = Month ex: 9 = September

1 of 6

March 2013

© Diodes Incorporated

)

g

g

)

)

r

r

r

r

DMN3070SSN

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 4.5V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 6)

Steady

State

t<10s

Steady

State

t<10s

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

I

S

30 V

±20 V

4.2

3.3

5.1
4

3.7

2.8

4.3

3.3

A

A

A

A

60 A

2 A

Thermal Characteristics

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TA = +70°C

Steady state

t<10s 115 °C/W

= +25°C

T

A

TA = +70°C

Steady state

t<10s 68 °C/W

P

R

P

R

R

T

J, TSTG

θJA

θJA

θJC

D

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

30 — — V

— — 1 µA
— — ±10 µA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

R

DS(ON)

IYfsI
V

GS(th

SD

1.1 — 2.1 V
— 24 40
— 30 50
— 2.7 — S
— 0.75 1.0 V

mΩ

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss

— 697 — pF
— 97 — pF
— 67 — pF

Gate Resistance Rg — 1.47 — Ω
Total Gate Charge (VGS = 4.5V) Qg — 6 —
Total Gate Charge (VGS = 10V) Qg — 13.2 —
Gate-Source Charge Q
Gate-Drain Charge Q
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation PD is based on t<10s R

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN3070SSN

Document number: DS36169 Rev. 2 - 2

— 2.2 —

s

— 1.8 —

d

t

D(ON

t

D(OFF

Q

tr

tf

t

— 4.3 — ns
— 4.4 — ns
— 20.1 — ns
— 4.1 — ns
— 7.3 — Ns IF = 9A, di/dt = 500A/μs
— 7.9 — nC IF = 9A, di/dt = 500A/μs

2 of 6

www.diodes.com

nC

D

0.78

0.5

160 °C/W

1.3

0.8
96 °C/W

18 °C/W

-55 to +150 °C

VGS = 0V, ID = 250µA
V

=24V, VGS = 0V

DS

VGS = ±20V, V

DS

= 0V

VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.2A
VGS = 4.5V, ID = 2A
VDS = 5V, ID =4.2A
VGS = 0V, IS = 1A

VDS = 15V, V

GS

= 0V

f = 1.0MHz

V

= 0V, VGS = 0V, f = 1MHz

DS

V

= 15V, ID = 9A

DS

VDD=15V,V

GEN

=10V,R

GEN

RL=15Ω

.

is based on t<10s R

θJA

.

θJA

March 2013

© Diodes Incorporated

W

W

= 6Ω,