Diodes DMN3067LW User Manual

DMN3067LW

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

67mΩ @ V

30V

70mΩ @ VGS = 4.0V
98mΩ @ VGS = 2.5V

DS(ON)

GS

= 4.5V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

NEW PRODUCT

) and yet maintain superior switching

DS(ON)

Applications

 Switching

 Power Management Functions

ADVANCED INFORMATION

ESD PROTECTED

SOT323

Top View

I

D

2.6A

2.5A

2.2A

Features and Benefits

 Low On-Resistance

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Small Surface Mount Package

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT323

 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram

 Weight: 0.006 grams (approximate)

D

G

Top View

Pin Configuration

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN3067LW-7 SOT323 3000/Tape & Reel

DMN3067LW-13 SOT323 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN3067LW

Document number: DS36640 Rev. 4 - 2

Chengdu A/T Site

Shanghai A/T Site

www.diodes.com

N30 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

March 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

T

Continuous Drain Current (Note 6) VGS = 4.5V

Steady

State

= +25°C

A

= +70°C

T

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient

(Note 5)

(Note 6) 1.1

(Note 5)

(Note 6) 130

Operating and Storage Temperature Range

ADVANCED INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV

DSS

I

 

DSS

I

 

GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

V

0.5

 

SD

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

C

iss

C



oss

C



rss

R

G

Q

g

Q



gs

Q

gd

t

D(on)

t



r

t



D(off)

t

f

DMN3067LW

Document number: DS36640 Rev. 4 - 2

2 of 6

www.diodes.com

30



















V

DSS

V

GSS

I

D

I

DM

P

D

R

θJA

T

J, TSTG

 

1 µA

±10 μA



1.5 V

48 67

50 70

70 98

1.2 V

447

54

41

23

4.6

1.0

1.0

3.8

5.2

15

6.1























DMN3067LW

30 V

±12 V

2.6

2.1

10 A

0.5

241

-55 to +150 °C

V

V

= 0V, ID = 250μA

GS

V

= 30V, V

DS

V

±12V, V

GS =

V

= VGS, ID = 250μA

DS

V

= 4.5V, ID = 2.5A

GS

mΩ

V

= 4.0V, ID = 2.5A

GS

V

= 2.5V, ID = 2.5A

GS

VGS = 0V, IS = 0.6A

pF

Ω

nC

nS

= 10V, VGS = 0V, f = 1.0MHz

V

DS

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 4.5V, VDS = 15V,

GS

= 2.5A

I

D

= 15V, ID = 1.25A, V

V

DD

R

= 10Ω

GEN

GS

DS

= 0V

= 0V

A

W

°C/W

= 4.5V

GEN

March 2014

© Diodes Incorporated

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